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Magnetron sputtering on 3d components with less accessible areasBENIEN, H; MEYER, M; PSYK, W et al.Metall (Berlin, West). 1991, Vol 45, Num 3, pp 246-249, issn 0026-0746Article

Propriétés lubrifiantes des films de disulfure de molybdène déposés par pulvérisation haute fréquence. 1. Comparaison des propriétés lubrifiantes pour les films obtenus par la méthode conventionnelle et par la méthode à deux ciblesNISHIMURA, M; NOSAKA, M; SUZUKI, M et al.Junkatsu. 1985, Vol 30, Num 9, pp 671-678, issn 0449-4156Article

Radio frequency reactive sputter etching: control of etch ratesHORWITZ, C. M.Journal of vacuum science and technology. B: microelectronics processing and phenomena. 1983, Vol 1, Num 3, pp 840-843Article

Surface structural damage produced in InP (100) by R.F. plasma or sputter depositionDAUTREMONT-SMITH, W. C; FELDMAN, L. C.Thin solid films. 1983, Vol 105, Num 2, pp 187-196, issn 0040-6090Article

R.F. DIODE SPUTTERING IN PERMANENT-MATCH MODECHRISTENSEN O; OLSEN OH; HOLM NE et al.1983; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1983; VOL. 100; NO 3; PP. 181-191; BIBL. 25 REF.Article

AUFBAU EINES ASYMMETRISCHEN DIODENSYSTEMS FUER DIE HOCHFREQUENZPLASMAZERSTAEUBUNG. = CONCEPTION D'UN SYSTEME DE DIODE ASYMETRIQUE POUR LA PULVERISATION EN HAUTE FREQUENCEKALTOFEN R; THIEMT K; REINHARD G et al.1976; EXPER. TECH. PHYS.; DTSCH.; DA. 1976; VOL. 24; NO 5; PP. 479-487; ABS. ANGL.; BIBL. 17 REF.Article

RADIO FREQUENCY PLASMA EXCITATIONBURDEN M ST J; CROSS KB.1979; VACUUM; GBR; DA. 1979; VOL. 29; NO 1; PP. 13-14Article

Structural and elastic properties of zirconium nitrite-aluminium nitride multilayersMENG, W. J; EESLEY, G. L; SVINARICH, K. A et al.Physical review. B, Condensed matter. 1990, Vol 42, Num 7A, pp 4881-4884, issn 0163-1829Article

Erosion profile of a radio frequency planar magnetron sputtering target with aperture shieldHOLDEMAN, L. B; MORELL, N.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1986, Vol 4, Num 1, pp 137-138, issn 0734-2101Article

Vortex trapping in Pb-alloy Josephson junctions induced by strong sputtering of the base electrodeWADA, M; NAKANO, J; YANAGAWA, F et al.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1985, Vol 3, Num 2, pp 383-386, issn 0734-2101Article

Buried ion-exchanged optical waveguides with refractive index profiles controlled by rediffusionBABA, K; SHIRAISHI, K; HANAIZUMI, O et al.Applied physics letters. 1984, Vol 45, Num 8, pp 815-817, issn 0003-6951Article

Control of silicon dioxide properties by RF sputteringLEE, M. K; CHANG, C. Y; TZENG, J. S et al.Journal of the Electrochemical Society. 1983, Vol 130, Num 3, pp 658-659, issn 0013-4651Article

Movable target assembly for diode sputtering systemSTONE, C. A; ROZAJ-BRVAR, A; DAVIS, R. F et al.Review of scientific instruments. 1982, Vol 53, Num 11, pp 1754-1756, issn 0034-6748Article

Characterization of radio frequency unbalanced magnetronsWINDOW, B; HARDING, G. L.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1992, Vol 10, Num 5, pp 3300-3304, issn 0734-2101Article

Radio frequency sputtering process of a polytetrafluoroethylene target and characterization of fluorocarbon polymer filmsMARECHAL, N; PAULEAU, Y.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1992, Vol 10, Num 3, pp 477-483, issn 0734-2101Article

Validity of self-bias voltage measurements on insulating electrodes in radio-frequency dry etching systemsDE VRIES, C. A. M; VAN DEN HOEK, W. G. M.Journal of applied physics. 1985, Vol 58, Num 5, pp 2074-2076, issn 0021-8979Article

Thin film coating techniques on wires and inner walls of small tubes via cylindrical magnetron sputteringHOSHI, Y; NAOE, M; YAMANAKA, S et al.Electrical engineering in Japan. 1983, Vol 103, Num 1, pp 16-22, issn 0424-7760Article

Radio frequency sputtering ― the significance of power inputHORWITZ, C. M.Journal of vacuum science and technology. A, vacuum, surfaces, and films. 1983, Vol 1, Num 4, pp 1795-1800Article

Large grain (112) oriented CuInSe2 thin films grown by R.F. sputteringROMEO, N; CANEVARI, V; SBERVEGLIERI, G et al.IEEE photovoltaic specialists conference. 18. 1985, pp 1388-1392Conference Paper

INTERNAL STRESS IN SPUTTER-DEPOSITED AL2O3 FILMSSHINZATO S; SUMOMOGI T; KOTUNE S et al.1982; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1982; VOL. 97; NO 4; PP. 333-337; BIBL. 11 REF.Article

ELECTRICAL PROPERTIES OF RF SPUTTERING SYSTEMSKELLER JH; PENNEBAKER WB.1979; I.B.M.J. RES. DEVELOP.; USA; DA. 1979; VOL. 23; NO 1; PP. 3-15; BIBL. 18 REF.Article

THERMAL OXIDATION OF NIOBIUM SILICIDE THIN FILMSCHOW TP; HAMZEH K; STECKL AJ et al.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 5; PP. 2716-2719; BIBL. 15 REF.Article

INVESTIGATION OF RF-SPUTTERED ND-GLASS FILMS FOR INTEGRATED OPTICSGRIFFITHS GJ; KHAN PJ.1979; J. VACUUM SCI. TECHNOL.; USA; DA. 1979; VOL. 16; NO 1; PP. 20-24; BIBL. 14 REF.Article

A SYSTEM FOR DEPOSITION OF FERROELECTRIC SUBSTANCES BY RADIO-FREQUENCY SPUTTERINGSUROWIAK Z; ZAJOSZ H; DYTRY R et al.1978; THIN SOLID FILMS; NLD; DA. 1978; VOL. 51; NO 3; PP. 359-362; BIBL. 3 REF.Article

Study of sputtering mechanism of silicon with hydrogen plasma controlled by magnetic fieldYONG SUN; NISHITANI, R; MIYASATO, T et al.Japanese journal of applied physics. 1994, Vol 33, Num 3A, pp L263-L266, issn 0021-4922, 2Article

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