Magnetron sputtering on 3d components with less accessible areasBENIEN, H; MEYER, M; PSYK, W et al.Metall (Berlin, West). 1991, Vol 45, Num 3, pp 246-249, issn 0026-0746Article

Propriétés lubrifiantes des films de disulfure de molybdène déposés par pulvérisation haute fréquence. 1. Comparaison des propriétés lubrifiantes pour les films obtenus par la méthode conventionnelle et par la méthode à deux ciblesNISHIMURA, M; NOSAKA, M; SUZUKI, M et al.Junkatsu. 1985, Vol 30, Num 9, pp 671-678, issn 0449-4156Article

Surface structural damage produced in InP (100) by R.F. plasma or sputter depositionDAUTREMONT-SMITH, W. C; FELDMAN, L. C.Thin solid films. 1983, Vol 105, Num 2, pp 187-196, issn 0040-6090Article

R.F. DIODE SPUTTERING IN PERMANENT-MATCH MODECHRISTENSEN O; OLSEN OH; HOLM NE et al.1983; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1983; VOL. 100; NO 3; PP. 181-191; BIBL. 25 REF.Article

AUFBAU EINES ASYMMETRISCHEN DIODENSYSTEMS FUER DIE HOCHFREQUENZPLASMAZERSTAEUBUNG. = CONCEPTION D'UN SYSTEME DE DIODE ASYMETRIQUE POUR LA PULVERISATION EN HAUTE FREQUENCEKALTOFEN R; THIEMT K; REINHARD G et al.1976; EXPER. TECH. PHYS.; DTSCH.; DA. 1976; VOL. 24; NO 5; PP. 479-487; ABS. ANGL.; BIBL. 17 REF.Article

RADIO FREQUENCY PLASMA EXCITATIONBURDEN M ST J; CROSS KB.1979; VACUUM; GBR; DA. 1979; VOL. 29; NO 1; PP. 13-14Article

Structural and elastic properties of zirconium nitrite-aluminium nitride multilayersMENG, W. J; EESLEY, G. L; SVINARICH, K. A et al.Physical review. B, Condensed matter. 1990, Vol 42, Num 7A, pp 4881-4884, issn 0163-1829Article

Characterization of radio frequency unbalanced magnetronsWINDOW, B; HARDING, G. L.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1992, Vol 10, Num 5, pp 3300-3304, issn 0734-2101Article

Radio frequency sputtering process of a polytetrafluoroethylene target and characterization of fluorocarbon polymer filmsMARECHAL, N; PAULEAU, Y.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1992, Vol 10, Num 3, pp 477-483, issn 0734-2101Article

Validity of self-bias voltage measurements on insulating electrodes in radio-frequency dry etching systemsDE VRIES, C. A. M; VAN DEN HOEK, W. G. M.Journal of applied physics. 1985, Vol 58, Num 5, pp 2074-2076, issn 0021-8979Article

Thin film coating techniques on wires and inner walls of small tubes via cylindrical magnetron sputteringHOSHI, Y; NAOE, M; YAMANAKA, S et al.Electrical engineering in Japan. 1983, Vol 103, Num 1, pp 16-22, issn 0424-7760Article

Radio frequency sputtering ― the significance of power inputHORWITZ, C. M.Journal of vacuum science and technology. A, vacuum, surfaces, and films. 1983, Vol 1, Num 4, pp 1795-1800Article

INTERNAL STRESS IN SPUTTER-DEPOSITED AL₂O₃ FILMSSHINZATO S; SUMOMOGI T; KOTUNE S et al.1982; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1982; VOL. 97; NO 4; PP. 333-337; BIBL. 11 REF.Article

ELECTRICAL PROPERTIES OF RF SPUTTERING SYSTEMSKELLER JH; PENNEBAKER WB.1979; I.B.M.J. RES. DEVELOP.; USA; DA. 1979; VOL. 23; NO 1; PP. 3-15; BIBL. 18 REF.Article

THERMAL OXIDATION OF NIOBIUM SILICIDE THIN FILMSCHOW TP; HAMZEH K; STECKL AJ et al.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 5; PP. 2716-2719; BIBL. 15 REF.Article

INVESTIGATION OF RF-SPUTTERED ND-GLASS FILMS FOR INTEGRATED OPTICSGRIFFITHS GJ; KHAN PJ.1979; J. VACUUM SCI. TECHNOL.; USA; DA. 1979; VOL. 16; NO 1; PP. 20-24; BIBL. 14 REF.Article

A SYSTEM FOR DEPOSITION OF FERROELECTRIC SUBSTANCES BY RADIO-FREQUENCY SPUTTERINGSUROWIAK Z; ZAJOSZ H; DYTRY R et al.1978; THIN SOLID FILMS; NLD; DA. 1978; VOL. 51; NO 3; PP. 359-362; BIBL. 3 REF.Article

INTERFACIAL CHEMISTRY EFFECTS ON THE ADHESION OF SPUTTER-DEPOSITED TIC FILMS TO STEEL SUBSTRATESPAN A; GREENE JE.1982; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1982; VOL. 97; NO 1; PP. 79-89; BIBL. 14 REF.Article

ETUDE PAR SPECTROMETRIE DE MASSE DE LA PULVERISATION CATHODIQUE REACTIVE HAUTE FREQUENCESHINOKI F.1977; BULL. ELECTROTECH. LAB.; JAP.; DA. 1977; VOL. 41; NO 8; PP. 64-70; ABS. ANGL.; BIBL. 16 REF.Article

FABRICATION DE L'ORDRE INFERIEUR AU MICRON, GRAVURE PAR PULVERISATION HF DE MONOCRISTAUX DE GAASNAMBA S; TOYODA K; SHIDKAWA T et al.1976; OYO BUTURI; JAP.; DA. 1976; VOL. 45; NO 7; PP. 689-694; BIBL. 11 REF.Article

COMPARISON OF RF SPUTTERED TITANIUM-TUNGSTEN/GOLD WITH DC MAGNETRON SPUTTERED TUNGSTEN/GOLD ON SILICONNOWICKI RS.1982; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1982; VOL. 25; NO 6; PP. 127-130; BIBL. 11 REF.Article

TIME DIVISION MULTIPLEXER FOR TELEGRAPH AND DATA TRANSMISSIONKOIZUMI S; TAKAYAMA M; KUBOTA Y et al.1981; NEC RES. DEV.; ISSN 0048-0436; JPN; DA. 1981; NO 63; PP. 1-9; BIBL. 1 REF.Article

ION-BOMBARDMENT-INDUCED IMPROVEMENT OF PHOTORESIST. MASK PROPERTIES FOR RF SPUTTER-ETCHING.IIDA Y; OKABAYASHI H; SUZUKI K et al.1977; JAP. J. APPL. PHYS.; JAP.; DA. 1977; VOL. 16; NO 8; PP. 1313-1318; BIBL. 12 REF.Article

PRESSURE CONTROL OF RF BIAS FOR SPUTTERING.KOCHEL SJ.1976; REV. SCI. INSTRUM.; U.S.A.; DA. 1976; VOL. 47; NO 12; PP. 1556-1557; BIBL. 4 REF.Article

RF SPUTTERING OF GRAPHITE IN ARGON-OXYGEN MIXTURES.HOLLAND L; OJHA SM.1976; VACUUM; G.B.; DA. 1976; VOL. 26; NO 6; PP. 233-235; BIBL. 2 REF.Article