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Results 1 to 25 of 359

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Predictable Power Saving Memory Controller Circuit Design for Embedded Static Random Access MemoryFAN, Yu-Cheng; LIN, Chih-Kang; CHOU, Shih-Ying et al.IEEE transactions on magnetics. 2014, Vol 50, Num 7, issn 0018-9464, 8600105.1-8600105.5, 2Article

Optimal parallel randomized renamingFARACH, M; MUTHUKRISHNAN, S.Information processing letters. 1997, Vol 61, Num 1, pp 7-10, issn 0020-0190Article

A Novel Device Geometry for Vortex Random Access MemoriesQI SHAO; PUI SZE KU; RUOTOLO, Antonio et al.IEEE transactions on magnetics. 2014, Vol 50, Num 7, issn 0018-9464, 3400404.1-3400404.4, 2Article

STT-RAM Cell Optimization Considering MTJ and CMOS VariationsYAOJUN ZHANG; XIAOBIN WANG; HAI LI et al.IEEE transactions on magnetics. 2011, Vol 47, Num 10, pp 2962-2965, issn 0018-9464, 4 p.Conference Paper

A faster parallel algorithm for k-connectivityIWAMA, K; IWAMOTO, C; OHSAWA, T et al.Information processing letters. 1997, Vol 61, Num 5, pp 265-269, issn 0020-0190Article

Separating the power of EREW and CREW PRAMs with small communication widthBEAME, P; FICH, F. E; SINHA, R. K et al.Information and computation (Print). 1997, Vol 138, Num 1, pp 89-99, issn 0890-5401Article

Using selective path-doubling for parallel shortest-path computationsCOHEN, E.Journal of algorithms (Print). 1997, Vol 22, Num 1, pp 30-56, issn 0196-6774Article

All-Magnetic, Nonvolatile, Addressable Chainlink MemoryBROMBERG, David M; MORRIS, Daniel H; PILEGGI, Larry et al.IEEE transactions on magnetics. 2013, Vol 49, Num 7, pp 4394-4397, issn 0018-9464, 4 p.Conference Paper

A Fully Functional 64 Mb DDR3 ST-MRAM Built on 90 nm CMOS TechnologyRIZZO, N. D; HOUSSAMEDDINE, D; CHIA, H.-J et al.IEEE transactions on magnetics. 2013, Vol 49, Num 7, pp 4441-4446, issn 0018-9464, 6 p.Conference Paper

Current Switching in MgO-Based Magnetic Tunneling JunctionsWENZHONG ZHU; HAI LI; YIRAN CHEN et al.IEEE transactions on magnetics. 2011, Vol 47, Num 1, pp 156-160, issn 0018-9464, 5 p., 2Article

Nano Spiral Inductors for Low-Power Digital Spintronic CircuitsKULKARNI, Jaydeep P; AUGUSTINE, Charles; JUNG, Byunghoo et al.IEEE transactions on magnetics. 2010, Vol 46, Num 6, pp 1898-1901, issn 0018-9464, 4 p.Conference Paper

Observation of Stress Assisted Magnetization Reversal in a Spin Valve StructureJIMBO, Kazuya; SAITO, Naoya; NAKAGAWA, Shigeki et al.IEEE transactions on magnetics. 2010, Vol 46, Num 6, pp 1649-1651, issn 0018-9464, 3 p.Conference Paper

Characterization of an AlOx Tunneling Barrier in a Magnetic Tunnel Junction by a Surface Plasmon Resonance Spectroscopy TechniqueKI WOONG KIM; JA HYUN KOO; IL JAE SHIN et al.IEEE transactions on magnetics. 2009, Vol 45, Num 1, pp 60-63, issn 0018-9464, 4 p., 1Article

A tight bound for approximating the square rootBSHOUTY, N. H; MANSOUR, Y; SCHIEBER, B et al.Information processing letters. 1997, Vol 63, Num 4, pp 211-213, issn 0020-0190Article

Computing OR on a randomized fixed adversary CRCW PRAMKUCERA, L.Information processing letters. 1997, Vol 63, Num 3, pp 165-166, issn 0020-0190Article

Parallelism always helpsMAK, L.SIAM journal on computing (Print). 1997, Vol 26, Num 1, pp 153-172, issn 0097-5397Article

Spin Torque Random Access Memory Down to 22 nm TechnologyXIAOBIN WANG; YIRAN CHEN; HAI LI et al.IEEE transactions on magnetics. 2008, Vol 44, Num 11, pp 2479-2482, issn 0018-9464, 4 p., 1Conference Paper

LLG simulation of MRAM switching trajectoriesVISSCHER, P. B; SHUXIA WANG.IEEE transactions on magnetics. 2006, Vol 42, Num 10, pp 3198-3200, issn 0018-9464, 3 p.Conference Paper

1.8-V nanospeed R/W module for 64-kB cross-point cell magnetic random access memoryLI, Simon C; LEE, Jia-Mou; SU, J. P et al.IEEE transactions on magnetics. 2005, Vol 41, Num 2, pp 909-911, issn 0018-9464, 3 p.Conference Paper

Magnetic tunnel junctions with low Ms free layersPARK, Sangjin; PARK, Wanjun; YOUNG JU KIM et al.Physica status solidi. A. Applied research. 2004, Vol 201, Num 8, pp 1640-1643, issn 0031-8965, 4 p.Conference Paper

Monitoring Oxygen Movement by Raman Spectroscopy of Resistive Random Access Memory with a Graphene-Inserted ElectrodeHE TIAN; CHEN, Hong-Yu; PHILIP WONG, H.-S et al.Nano letters (Print). 2013, Vol 13, Num 2, pp 651-657, issn 1530-6984, 7 p.Article

Scalability Prospect of Three-Terminal Magnetic Domain-Wall Motion DeviceFUKAMI, Shunsuke; ISHIWATA, Nobuyuki; KASAI, Naoki et al.IEEE transactions on magnetics. 2012, Vol 48, Num 7, pp 2152-2157, issn 0018-9464, 6 p.Article

Progress and Prospects of Spin Transfer Torque Random Access MemoryCHEN, E; APALKOV, D; KAWAKAMI, R et al.IEEE transactions on magnetics. 2012, Vol 48, Num 11, pp 3025-3030, issn 0018-9464, 6 p.Conference Paper

A Study of Write Margin of Spin Torque Transfer Magnetic Random Access Memory TechnologyTAI MIN; QIANG CHEN; POKANG WANG et al.IEEE transactions on magnetics. 2010, Vol 46, Num 6, pp 2322-2327, issn 0018-9464, 6 p.Conference Paper

Resonant Switching of Two Dipole-Coupled NanomagnetsCHEREPOV, S. S; KORENIVSKI, V; WORLEDGE, D. C et al.IEEE transactions on magnetics. 2010, Vol 46, Num 6, pp 2112-2115, issn 0018-9464, 4 p.Conference Paper

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