Controlling surface shallow junction depth by a rapid thermal annealing process with low ambient pressureHUANG, Yi-Jen; LIU, Chun-Chu; LO, Kuang-Yao et al.Applied surface science. 2011, Vol 257, Num 7, pp 2494-2497, issn 0169-4332, 4 p.Article

Effects of rapid thermal annealing time and ambient temperature on the charge storage capability of SiO₂/pure Ge/rapid thermal oxide memory structureHENG, C. L; TEO, L. W; HO, Vincent et al.Microelectronic engineering. 2003, Vol 66, Num 1-4, pp 218-223, issn 0167-9317, 6 p.Conference Paper

Control of substrate surface temperature in millisecond annealing technique using thermal plasma jetOKADA, T; HIGASHI, S; KAKU, H et al.Thin solid films. 2007, Vol 515, Num 12, pp 4897-4900, issn 0040-6090, 4 p.Conference Paper

Vacuum rapid thermal annealing of quartz resonatorsLAZAROVA, V; YORDANOV, Ts; SPASSOV, L et al.Vacuum. 2002, Vol 69, Num 1-3, pp 379-383, issn 0042-207X, 5 p.Conference Paper

Rapid dye-sensitized solar cell working electrode preparation using far infrared rapid thermal annealingWU, Chun-Te; KUO, Hsiu-Po; TSAI, Hung-An et al.Applied energy. 2012, Vol 100, pp 138-143, issn 0306-2619, 6 p.Conference Paper

The sensitivity of thermal donor generation in silicon to self-interstitial sinksVORONKOV, V. V; VORONKOVA, G. I; BATUNINA, A. V et al.Journal of the Electrochemical Society. 2000, Vol 147, Num 10, pp 3899-3906, issn 0013-4651Article

Effect of rapid thermal annealing process on calcination of tin oxide powderHYANG HO SON; WON GYU LEE.Surface and interface analysis. 2012, Vol 44, Num 8, pp 989-992, issn 0142-2421, 4 p.Conference Paper

Effect of rapid thermal annealing on photoluminescence and crystal structures of CdZnO filmsRUIJIE ZHANG; PEILIANG CHEN; YUANYUAN ZHANG et al.Journal of crystal growth. 2010, Vol 312, Num 12-13, pp 1908-1911, issn 0022-0248, 4 p.Article

Structural and electrical characterization of the nickel silicide films formed at 850 °C by rapid thermal annealing of the Ni/Si(100) filmsUTLU, G; ARTUNC, N; BUDAK, S et al.Applied surface science. 2010, Vol 256, Num 16, pp 5069-5075, issn 0169-4332, 7 p.Article

NiCuZn ferrite thin films grown by a sol-gel method and rapid thermal annealingFENG LIU; CHEN YANG; TIANLING REN et al.Journal of magnetism and magnetic materials. 2007, Vol 309, Num 1, pp 75-79, issn 0304-8853, 5 p.Article

Effects of post-deposition rapid thermal annealing on aluminum-doped ZnO thin films grown by atomic layer depositionCHENG, Yung-chen.Applied surface science. 2011, Vol 258, Num 1, pp 604-607, issn 0169-4332, 4 p.Article

Effects of rapid thermal annealing on the structural properties of TiO₂ nanotubesLIN, J. Y; CHOU, Y. T; SHEN, J. L et al.Applied surface science. 2011, Vol 258, Num 1, pp 530-534, issn 0169-4332, 5 p.Article

Improvement of photoluminescence mechanism of CTA-treated Si⁺-implanted SiO₂ films by using RTATSAI, Jen-Hwan; FU, Ming-Yue.Journal of luminescence. 2010, Vol 130, Num 10, pp 1680-1686, issn 0022-2313, 7 p.Article

Activation of Mg-doped P-GaN by using two-step annealingHWANG, Jun-Dar; YANG, Gwo-Huei.Applied surface science. 2007, Vol 253, Num 10, pp 4694-4697, issn 0169-4332, 4 p.Article

Patterning by rapid thermal annealing of GaAs layers grown on diluted nitride QWsMIGUEL-SANCHEZ, J; GUZMAN, A; JAHN, U et al.Microelectronics journal. 2006, Vol 37, Num 12, pp 1552-1556, issn 0959-8324, 5 p.Conference Paper

Magnetic and electrical properties of TiO₂:Nb thin filmsYU, Chang-Feng; SUN, Shih-Jye; CHEN, Jian-Ming et al.Applied surface science. 2014, Vol 292, pp 773-776, issn 0169-4332, 4 p.Article

Inspecting the surface of implanted Si(111) during annealing by reflective second harmonic generation: The influence of chamber pressureLIU, Chung-Wei; CHANG, Shoou-Jinn; LIU, Chun-Chu et al.Thin solid films. 2013, Vol 529, pp 282-286, issn 0040-6090, 5 p.Conference Paper

CF₄ plasma effect combined with rapid thermal annealing for high-k Er₂O₃ dielectricsCHYUAN HAUR KAO; HSUAN CHI FAN; SHIH NAN CHENG et al.Thin solid films. 2012, Vol 520, Num 10, pp 3852-3856, issn 0040-6090, 5 p.Conference Paper

Morphological and micro-raman investigations on Ar⁺-ion irradiated nanostructured GaAs surfaceMOHANTA, S. K; SONI, R. K; GOSVAMI, N et al.Applied surface science. 2007, Vol 253, Num 10, pp 4531-4536, issn 0169-4332, 6 p.Article

The effects of grain boundary scattering on electrical resistivity of Ag/NiSi silicide films formed on silicon substrate at 500 °C by RTAUTLU, G; ARTUNC, N.Applied surface science. 2014, Vol 310, pp 248-256, issn 0169-4332, 9 p.Conference Paper

Preparation of high transmittance ZnO:Al film by pulsed filtered cathodic arc technology and rapid thermal annealingGAO, F; YU, K. M; MENDELSBERG, Rj et al.Applied surface science. 2011, Vol 257, Num 15, pp 7019-7022, issn 0169-4332, 4 p.Article

Photocatalytic performance of TiO₂ films produced with combination of oxygen-plasma and rapid thermal annealingJANG, Jun-Won; PARK, Jae-Woo.Thin solid films. 2011, Vol 520, Num 1, pp 193-198, issn 0040-6090, 6 p.Article

Enhancement of the magnetoresistance in rapid recurrent thermal annealed Co/Cu/Co/CoNbZr spin valve multilayersWEN, Qi-Ye; ZHANG, Huai-Wu; JIANG, Xiang-Dong et al.Journal of magnetism and magnetic materials. 2004, Vol 282, pp 100-104, issn 0304-8853, 5 p., NSConference Paper

A study of nonequilibrium diffusion modeling-applications to rapid thermal annealing and advanced bipolar technologiesBACCUS, B; WADA, T; SHIGYO, N et al.I.E.E.E. transactions on electron devices. 1992, Vol 39, Num 3, pp 648-661, issn 0018-9383Article

Rapid thermal annealing of indium-implanted silicon single crystalsSHIRYAEV, S. YU; NYLANDSTED LARSEN, A; SAFRONOV, N et al.Journal of applied physics. 1989, Vol 65, Num 11, pp 4220-4224, issn 0021-8979, 5 p.Article