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Effect of Ta₂N crystallinity on diffusion barrier propertiesCHUNG, Hung-Chin; LIU, Chuan-Pu.Proceedings - Electrochemical Society. 2003, pp 161-166, issn 0161-6374, isbn 1-56677-390-3, 6 p.Conference Paper

Development of spin-on dielectric (Silk<^TM>) etch process for 0.13μm Cu-low K interconnects technologyRAMANA MURTHY, B; CHEN, Y. W; CHEN, X. T et al.Proceedings - Electrochemical Society. 2003, pp 195-203, issn 0161-6374, isbn 1-56677-390-3, 9 p.Conference Paper

The proposal of all-wet fabrication process for ULSI interconnects technologies: Application of electroless NiB deposition to capping and barrier layersYOSHINO, Masahiro; NONAKA, Yuichi; YOKOSHIMA, Tokihiko et al.Proceedings - Electrochemical Society. 2003, pp 137-145, issn 0161-6374, isbn 1-56677-390-3, 9 p.Conference Paper

The role of chloride ion in copper electrodeposition from acidic baths containing Cl^-, PEG, and SPSMIN TAN; HARB, John N.Proceedings - Electrochemical Society. 2003, pp 94-98, issn 0161-6374, isbn 1-56677-390-3, 5 p.Conference Paper

Mechanisms of using organic acids to clean copper surfacesYAGISHITA, Teruo; ISHIKAWA, Kenji; NAKAMURA, Moritaka et al.Proceedings - Electrochemical Society. 2003, pp 259-263, issn 0161-6374, isbn 1-56677-390-3, 5 p.Conference Paper

An in-situ FTIR study on palladium displacement reaction for autocatalytic electroless copper depositionOH, Youn-Jin; CHUNG, Chan-Hwa.Proceedings - Electrochemical Society. 2003, pp 79-87, issn 0161-6374, isbn 1-56677-390-3, 9 p.Conference Paper

Copper nucleation on platinum in the presence of additives in acid-copper solutionJIANWEN HAN; KING, Mackenzie; STAWASZ, Michele et al.Proceedings - Electrochemical Society. 2003, pp 63-78, issn 0161-6374, isbn 1-56677-390-3, 16 p.Conference Paper

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The influence of 2,2'-dipyridyl on non-formaldehyde electroless copper platingJUN LI; HAYDEN, Harley; KOHL, Paul A et al.Proceedings - Electrochemical Society. 2003, pp 99-111, issn 0161-6374, isbn 1-56677-390-3, 13 p.Conference Paper

Detection of accelerator breakdown products in copper plating bathsPAVLOV, M; SHALYT, E; BRATIN, P et al.Proceedings - Electrochemical Society. 2003, pp 53-62, issn 0161-6374, isbn 1-56677-390-3, 10 p.Conference Paper

Three-dimensional simulation of superconformal copper deposition based on the curvature-enhanced accelerator coverage mechanismBÄR, E; LORENZ, J; RYSSEL, H et al.Proceedings - Electrochemical Society. 2003, pp 21-27, issn 0161-6374, isbn 1-56677-390-3, 7 p.Conference Paper

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Use of Ti_xTiN as cap layer for the formation of cobalt silicideVULPIO, M; FAZIO, D; BILECI, M et al.Proceedings - Electrochemical Society. 2003, pp 167-173, issn 0161-6374, isbn 1-56677-390-3, 7 p.Conference Paper

Damascene copper electroplating for chip interconnectionsANDRICACOS, P. C; UZOH, C; DUKOVIC, J. O et al.Proceedings - Electrochemical Society. 1998, pp 48-58, issn 0161-6374, isbn 1-56677-200-1Conference Paper

Considerations for integration of electroplated copper onto semiconductor substratesSIMPSON, C. R; PENA, D. M; COLE, J. V et al.Proceedings - Electrochemical Society. 1998, pp 59-66, issn 0161-6374, isbn 1-56677-200-1Conference Paper

Zinc influence on copper soldering and passivationCAVALLOTTI, P. L; MAGAGNIN, L; SIRTORI, V et al.Proceedings - Electrochemical Society. 1998, pp 262-269, issn 0161-6374, isbn 1-56677-200-1Conference Paper

Investigation of copper bath ageing in the damascene process by electrochemical impedance spectroscopyGABRIELLI, C; MOCOTEGUY, P; PERROT, H et al.Proceedings - Electrochemical Society. 2003, pp 129-136, issn 0161-6374, isbn 1-56677-390-3, 8 p.Conference Paper

Process-induced voiding in copper interconnect metallizationLINDGREN, Peter; DOWNES, Keith; COLE, Stephen et al.Proceedings - Electrochemical Society. 2003, pp 237-243, issn 0161-6374, isbn 1-56677-390-3, 7 p.Conference Paper

ECD seed<^TM> copper layer for seed enhancement in advanced interconnectsHAUMESSER, P. H; DA SILVA, S; CORDEAU, M et al.Proceedings - Electrochemical Society. 2003, pp 6-15, issn 0161-6374, isbn 1-56677-390-3, 10 p.Conference Paper

Relation of contact resistance reduction and process parameters of bonded copper interconnects in three-dimensional integration technologyCHEN, K. N; FAN, A; TAN, C. S et al.Proceedings - Electrochemical Society. 2003, pp 1-5, issn 0161-6374, isbn 1-56677-390-3, 5 p.Conference Paper

Multicomponent interactions of moisture and organic impurities with the wafer surfaceVERGHESE, M; SHERO, E; SHADMAN, F et al.Proceedings - Electrochemical Society. 1998, pp 112-121, issn 0161-6374, isbn 1-56677-200-1Conference Paper

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Challenges in the extension of hierarchical wiring systemsTHEIS, T. N.Proceedings - Electrochemical Society. 1998, pp 1-11, issn 0161-6374, isbn 1-56677-200-1Conference Paper

Modeling of electromigration-induced failure of metallic thin-film interconnectsMAROUDAS, D; GUNGOR, M. R; HO, H. S et al.Proceedings - Electrochemical Society. 1998, pp 232-243, issn 0161-6374, isbn 1-56677-200-1Conference Paper