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Results 1 to 25 of 13923

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High quality rapid thermal annealing of InP and GaAs substrates under low pressure tertiarybutylphosphine and tertiarybutylarsine ambientsKATZ, A; FEINGOLD, A; PEARTON, S. J et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1991, Vol 9, Num 5, pp 2466-2472, issn 0734-211XArticle

Formation of TiN/CoSi2 bilayer from Co/Ti/Si structure in a non-isothermal reactorRUDAKOV, Valery I; GUSEV, Valery N.Proceedings of SPIE, the International Society for Optical Engineering. 2008, Vol 7025, pp 70250X.1-70250X.8, issn 0277-786X, isbn 978-0-8194-7238-0 0-8194-7238-7Conference Paper

The effect of plastic deformation and thermal annealing of the copper substrate on the zeolite film formationVALTCHEV, V; MINTOVA, S; VASILEV, I et al.Journal of the Chemical Society. Chemical communications. 1994, Num 8, pp 979-980, issn 0022-4936Article

Particularités du recuit des bilacunes dans le silicium contenant des régions desordonnéesANTONOVA, I.V; VASIL'EV, A.V; PANOV, V.I et al.Fizika i tehnika poluprovodnikov. 1989, Vol 23, Num 6, pp 1076-1079, issn 0015-3222Article

Photoacoustic monitoring of damage in ion implanted and annealed Si layersLUCIANI, L; ZAMMIT, U; MARINELLI, M et al.Applied physics. A, Solids and surfaces. 1989, Vol 49, Num 2, pp 205-209, issn 0721-7250, 5 p.Article

Rapid thermal annealing of GaAs in a graphite susceptor―comparison with proximity annealingPEARTON, S. J; CARUSO, R.Journal of applied physics. 1989, Vol 66, Num 2, pp 663-665, issn 0021-8979, 3 p.Article

Rapid thermal annealing of P+ and PE5+ implanted silicon, and its application to solar cellsJOLY, J.-F; CHAUSSEMY, G; BARBIER, D et al.IEEE photovoltaic specialists conference. 18. 1985, pp 1756-1757Conference Paper

Diffusion anormalement accélérée de phosphore à partir d'une couche de silicium implantée d'ions sous pressionVASIN, A. S; OKULICH, V. I; PANTELEEV, V. A et al.Fizika i tehnika poluprovodnikov. 1989, Vol 23, Num 3, pp 483-487, issn 0015-3222Article

Characterization of Y-Ba-Cu-O superconducting thin films prepared by coevaporation of Y, Cu, and BaF2GARZON, F. H; BEERY, J. G; BROWN, D. R et al.Applied physics letters. 1989, Vol 54, Num 14, pp 1365-1367, issn 0003-6951, 3 p.Article

A comparison of defect state densities observed in thermally-annealed hydrogenated amorphous silicon samples after fast or slow cooling ratesGRIMMER, D. P; EPSTEIN, K. A; MISEMER, D. K et al.Photovoltaic specialists conference. 19. 1987, pp 857-862Conference Paper

The dielectric reliability of very thin SiO2 films grown by rapid thermal processingFUKUDA, H; IWABUCHI, T; OHNO, S et al.Japanese journal of applied physics. 1988, Vol 27, Num 11, pp L2164-L2167, issn 0021-4922, part 2Article

Study of oxygen related donors in CZ-silicon annealed at 430°C to 630°CPRAKASH, O; SINGH, S.SPIE proceedings series. 1998, pp 652-655, isbn 0-8194-2756-X, 2VolConference Paper

In situ observation by ultrahigh vacuum reflection electron microscopy of terrace formation processes on 1000 silicon surfaces during annealingINOUE, N; YAGI, K.Applied physics letters. 1989, Vol 55, Num 14, pp 1400-1402, issn 0003-6951, 3 p.Article

Improving the annealing lehrs cycle processVIDROMECANICA, Contact.Glass international. 2008, Vol 31, Num 6, issn 0143-7836, 42, 44 [2 p.]Article

Formation of epitaxial yttrium silicide on (111) siliconSIEGAL, M. P; KAATZ, F. H; GRAHAM, W. R et al.Journal of applied physics. 1989, Vol 66, Num 7, pp 2999-3006, issn 0021-8979, 8 p.Article

Annealing and decorating lehr supply optionsGlass international. 2007, Vol 30, Num 4, pp 46-48, issn 0143-7836, 3 p.Article

Thermal processing of GaAsSb/GaAs low-dimensional strained-layer structuresHOMEWOOD, K. P; GILLIN, W. P; PRITCHARD, R. E et al.Superlattices and microstructures. 1990, Vol 7, Num 4, pp 359-361, issn 0749-6036Article

Uniform dispersion of nanotubes in thermoplastic polymer through thermal annealingTISHKOVA, V; BONNET, G; PONT, F et al.Carbon (New York, NY). 2013, Vol 53, pp 399-402, issn 0008-6223, 4 p.Article

The influence of thermal annealing to remove polymeric residue on the electronic doping and morphological characteristics of grapheneKUMAR, Kitu; KIM, Youn-Su; YANG, Eui-Hyeok et al.Carbon (New York, NY). 2013, Vol 65, pp 35-45, issn 0008-6223, 11 p.Article

Magnetic irreversibility of discontinuous Fe/CaF2 multilayers with thermal annealingVARALDA, J; ORTIZ, W. A; DE OLIVEIRA, A. J. A et al.Journal of magnetism and magnetic materials. 2001, Vol 226-30, pp 1738-1739, issn 0304-8853, 2Conference Paper

Shallow junctions for ULSI technologySOLMI, S; ANGELUCCI, R; MERLI, M et al.Alta frequenza. 1990, Vol 1, Num 2, pp 159-165, issn 0002-6557Article

The effect of thermal annealing on luminescence centres in Ge-silica fibresFIRSH, Y; TOWNSEND, P. D; TOWNSEND, J. E et al.Journal of thermal analysis. 1991, Vol 37, Num 6, pp 1153-1160, issn 0368-4466Article

The annealing of radical species in γ-irradiated cesium nitrateNAIR, S. M. K; KOSHY KUNJU MALAYIL.Journal of radioanalytical and nuclear chemistry. 1987, Vol 118, Num 4, pp 245-254, issn 0236-5731Article

Magnetic and magneto-optical properties of rapid thermal annealing glass/Al/BiGadyIG double-layer filmsHUAI-WU ZHANG; KIM, H. J; YANG, S. Q et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1995, Vol 34, Num 1, pp 53-57, issn 0921-5107Article

Classical and rapid thermal process effects on oxygen precipitation in siliconMAHFOUD, K; LOGHMARTI, M; MULLER, J. C et al.Journal de physique. III (Print). 1995, Vol 5, Num 9, pp 1345-1351, issn 1155-4320Conference Paper

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