Application of ultra-rapid thermal annealing for electrical activation for next generation MOSFETsSUGURO, Kyoichi; ITO, Takayuki; NISHINOHARA, Kazumi et al.Proceedings - Electrochemical Society. 2004, pp 39-49, issn 0161-6374, isbn 1-56677-406-3, 11 p.Conference Paper

Spin-on glass curing by rapid thermal annealingUOOCHI, Y; TABUCHI, A; FURUMURA, Y et al.Journal of the Electrochemical Society. 1990, Vol 137, Num 12, pp 3923-3925, issn 0013-4651Article

Residual defects in high-energy B-, P- and As-implanted Si by rapid thermal annealingTAMURA, M; OHYU, K.Applied physics. A, Solids and surfaces. 1989, Vol 49, Num 2, pp 149-155, issn 0721-7250, 7 p.Article

Dose loss and diffusion in BF₂ implanted silicon during rapid thermal annealingDOKUMACI, Omer; RONSHEIM, Paul; HEGDE, Suri et al.Proceedings - Electrochemical Society. 2003, pp 105-110, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper

effect of oxidation induced stacking fault (OSF) ring on generation and motion of slip dislocationGONZALEZ, F; THAKUR, R. P. S; BONDARENKO, I et al.SPIE proceedings series. 1997, pp 223-234, isbn 0-8194-2765-9Conference Paper

Sample geometry effects in rapid thermal annealingRUGGLES, G. A; HONG, S. N; WORTMAN, J. J et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1990, Vol 8, Num 2, pp 122-127, issn 0734-211X, 6 p.Article

Doping of diamond by coimplantation of carbon and boronSANDHU, G. S; SWANSON, M. L; CHU, W. K et al.Applied physics letters. 1989, Vol 55, Num 14, pp 1397-1399, issn 0003-6951, 3 p.Article

A study of nonequilibrium diffusion modeling-applications to rapid thermal annealing and advanced bipolar technologiesBACCUS, B; WADA, T; SHIGYO, N et al.I.E.E.E. transactions on electron devices. 1992, Vol 39, Num 3, pp 648-661, issn 0018-9383Article

Rapid thermal annealing of indium-implanted silicon single crystalsSHIRYAEV, S. YU; NYLANDSTED LARSEN, A; SAFRONOV, N et al.Journal of applied physics. 1989, Vol 65, Num 11, pp 4220-4224, issn 0021-8979, 5 p.Article

Modeling of ultrahighly doped shallow junctions for aggressively scaled CMOSKENNEL, H. W; CEA, S. M; LILAK, A. D et al.IEDm : international electron devices meeting. 2002, pp 875-878, isbn 0-7803-7462-2, 4 p.Conference Paper

Rapid thermal annealed Cr barrier against Cu diffusionCHUANG, Jui-Chang; TU, Shuo-Lun; CHEN, Mao-Chieh et al.Journal of the Electrochemical Society. 1999, Vol 146, Num 7, pp 2643-2647, issn 0013-4651Article

Phosphorus pileup and sublimation at the silicon surfaceSATO, Y; IMAI, K; YABUMOTO, N et al.Journal of the Electrochemical Society. 1997, Vol 144, Num 7, pp 2548-2551, issn 0013-4651Article

Using wavelength-dependent emissivity of semiconductor wafer to model heat transfer in rapid thermal processing stationBELIKOV, S; MARTYNOV, H. M; KAPLINSKY, M et al.IEEE transactions on semiconductor manufacturing. 1995, Vol 8, Num 3, pp 360-362, issn 0894-6507Article

A study of titanium silicide formation by multiple arsenic-ion-implantationCHEN, P. C; LIN, J. Y; HWANG, H. L et al.Solid-state electronics. 1993, Vol 36, Num 5, pp 705-709, issn 0038-1101Article

A free-boundary problem modeling loop dislocations in crystalsFRIEDMAN, A; BEI HU; VELAZQUEZ, J. J. L et al.Archive for rational mechanics and analysis. 1992, Vol 119, Num 3, pp 229-291, issn 0003-9527Article

Optimization of nitridation and reoxidation conditions for an EEPROM tunneling dielectricARIMA, H; AJIKA, N; OHI, M et al.Japanese journal of applied physics. 1991, Vol 30, Num 3, pp L398-L401, issn 0021-4922, p.AArticle

High quality rapid thermal annealing of InP and GaAs substrates under low pressure tertiarybutylphosphine and tertiarybutylarsine ambientsKATZ, A; FEINGOLD, A; PEARTON, S. J et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1991, Vol 9, Num 5, pp 2466-2472, issn 0734-211XArticle

Optimization of the amorphous layer thickness and the junction depth in the preamorphization method for shallow-junction foemationTANAKA, A; YAMAJI, T; UCHIYAMA, A et al.Japanese journal of applied physics. 1990, Vol 29, Num 2, pp L191-L194, issn 0021-4922, 1Article

Ramp rate dependence of NiSi formation studied by silicided Schottky contactJIANG, Y.-L; RU, G.-P; LI, B.-Z et al.Electronics Letters. 2005, Vol 41, Num 2, pp 103-104, issn 0013-5194, 2 p.Article

The diffusion, activation and microstructure evolution of phosphorus implanted into polysiliconADAM, L. S; WANG, Y; MANSOORI, M et al.Proceedings - Electrochemical Society. 2003, pp 339-344, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper

Temperature measurement in rapid thermal processingTIMANS, P. J.Solid state technology. 1997, Vol 40, Num 4, pp 63-74, issn 0038-111X, 7 p.Article

Rapid thermal process for enhancement of collimated titanium nitride barriersKIM, S.-D; JIN, S.-G; HONG, M.-R et al.Journal of the Electrochemical Society. 1997, Vol 144, Num 2, pp 664-669, issn 0013-4651Article

Thermal uniformity and stress minimization during rapid thermal processesPERKINS, R. H; RILEY, T. J; GYURCSIK, R. S et al.IEEE transactions on semiconductor manufacturing. 1995, Vol 8, Num 3, pp 272-279, issn 0894-6507Article

A novel device for short-time diffusion annealingLERCH, W; STOLWIJK, N. A; MEHRER, H et al.Measurement science & technology (Print). 1994, Vol 5, Num 7, pp 835-841, issn 0957-0233Article

Developments in single wafer multiprocessingHARRISON, H. B.Microelectronics journal. 1994, Vol 25, Num 1, pp 1-8, issn 0959-8324Article