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kw.\*:("Recombinación Auger")

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Simulation studies of the dynamic behavior of semiconductor lasers with Auger recombinationMING TANG; SHYH WANG.Applied physics letters. 1987, Vol 50, Num 26, pp 1861-1863, issn 0003-6951Article

Theory and modeling of type-II strained-layer superlattice detectorsFLATTE, Michael E; GREIN, Christoph H.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7222, issn 0277-786X, isbn 978-0-8194-7468-1 0-8194-7468-1, 1Vol, 72220Q.1-72220Q.9Conference Paper

Beyond the ABC : Carrier recombinations in semiconductor lasersHADER, J; MOLONEY, J. V; KOCH, S. W et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, pp 61151T.1-61151T.7, issn 0277-786X, isbn 0-8194-6157-1, 1VolConference Paper

Theoretical prediction of the impact of Auger recombination on charge collection from an ion trackEDMONDS, L. D.IEEE transactions on nuclear science. 1991, Vol 38, Num 5, pp 999-1004, issn 0018-9499Article

Novel bandgap grading technique for enhancing the limiting efficiency of solar cellsHABIB, S. E.-D; RAFAT, N. H.Renewable energy. 1997, Vol 10, Num 2-3, pp 129-134, issn 0960-1481Conference Paper

The influence of screening on the Auger coefficient of 1.3 μm InGaAsP lattice matched to InPYEVICK, D; BARDYSZEWSKI, W.IEEE journal of quantum electronics. 1987, Vol 23, Num 2, pp 168-170, issn 0018-9197Article

On the theory of Auger recombination in slightly compensated heavity doped semiconductorsDOAN NHAT QUANG.Journal of the Physical Society of Japan. 1991, Vol 60, Num 11, pp 3761-3767, issn 0031-9015Article

Band-structure engineering for low-threshold high-efficiency semiconductor lasersADAMS, A. R.Electronics Letters. 1986, Vol 22, Num 5, pp 249-250, issn 0013-5194Article

Luminescence up-conversion by Auger process at InP-AlInAs type II interfacesTITKOV, A; SEIDEL, W; ANDRE, J. P et al.Solid-state electronics. 1994, Vol 37, Num 4-6, pp 1041-1044, issn 0038-1101Conference Paper

Effect of Auger recombination and differential gain on the temperature sensitivity of 1.5 μm quantum well lasersZOU, Y; OSINSKI, J. S; GRODZINSKI, P et al.Applied physics letters. 1993, Vol 62, Num 2, pp 175-177, issn 0003-6951Article

Lifetime and efficiency limits of crystalline silicon solar cellsKERR, Mark J; CAMPBELL, Patrick; CUEVAS, Andres et al.sans titre. 2002, pp 438-441, isbn 0-7803-7471-1, 4 p.Conference Paper

Recombination channels in 2.4―3.2 μm GaInAsSb quantum-well lasersGADEDJISSO-TOSSOU, K. S; BELAHSENE, S; MOHOU, M. A et al.Semiconductor science and technology. 2013, Vol 28, Num 1, issn 0268-1242, 015015.1-015015.6Article

The InSb Auger recombination coefficient derived from the IR-FIR dynamical plasma reflectivityMARCHETTI, S; MARTINELLI, M; SIMILI, R et al.Journal of physics. Condensed matter (Print). 2001, Vol 13, Num 33, pp 7363-7369, issn 0953-8984Article

In(As, Sb) superlattice-based emitters for mid-IR wavelengthsPHILLIPS, C. C.IEE proceedings. Optoelectronics. 1997, Vol 144, Num 5, pp 262-265, issn 1350-2433Article

Auger recombination and impact ionization in heterojunction photovoltaic cellsLIAKOS, J. K; LANDSBERG, P. T.Semiconductor science and technology. 1996, Vol 11, Num 12, pp 1895-1900, issn 0268-1242Article

Recombination in quantum dot ensemblesBLOOD, Peter; PASK, Helen; SANDALL, Ian et al.Proceedings of SPIE, the International Society for Optical Engineering. 2007, pp 64850J.1-64850J.10, issn 0277-786X, isbn 978-0-8194-6598-6, 1VolConference Paper

Study of temperature effects on loss mechanisms in 1.55 μm laser diodes with In0.81Ga0.19P electron stopper layerABRAHAM, P; PIPREK, J; DENBAARS, S. P et al.Semiconductor science and technology. 1999, Vol 14, Num 5, pp 419-424, issn 0268-1242Article

Auger recombination in an intense acoustic noise fieldDOAN NHAT QUANG.Physica status solidi. B. Basic research. 1997, Vol 200, Num 1, pp 199-209, issn 0370-1972Article

Potential of Si1-xGex alloys for Auger generation in highly efficient solar cellsKOLODINSKI, S; WERNER, J. H; QUEISSER, H.-J et al.Applied physics. A, Materials science & processing (Print). 1995, Vol 61, Num 5, pp 535-539, issn 0947-8396Article

Effective lifetime measurements in silicon-on-sapphire material by time-resolved reflectometryGALECKAS, A; GRIVICKAS, V; PETRAUSKAS, M et al.Thin solid films. 1990, Vol 191, Num 1, pp 37-45, issn 0040-6090Article

Auger recombination in quantum well InGaAsHAUG, A.Electronics Letters. 1990, Vol 26, Num 17, pp 1415-1416, issn 0013-5194Article

High pressure studies of mid-infrared type-II W diode lasers at cryogenic temperaturesO'BRIEN, K; ADAMS, A. R; SWEENEY, S. J et al.Physica status solidi. B. Basic research. 2007, Vol 244, Num 1, pp 224-228, issn 0370-1972, 5 p.Conference Paper

Recombinaison Auger dans le germanium fortement dopéKARPOVA, I. V; PEREL, V. I; SYROVEGIN, S. M et al.Fizika i tehnika poluprovodnikov. 1989, Vol 23, Num 5, pp 826-831, issn 0015-3222Article

Auger suppression and negative resistance in low gap pin diode structuresWHITE, A. M.Infrared physics. 1986, Vol 26, Num 5, pp 317-324, issn 0020-0891Article

Unexpectedly slow two particle decay of ultra-dense excitons in cuprous oxideLASZLO FRAZER, N; SCHALLER, Richard D; KETTERSON, J. B et al.Solid state communications. 2013, Vol 170, pp 34-38, issn 0038-1098, 5 p.Article

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