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Simulation studies of the dynamic behavior of semiconductor lasers with Auger recombinationMING TANG; SHYH WANG.Applied physics letters. 1987, Vol 50, Num 26, pp 1861-1863, issn 0003-6951Article

RECOMBINAISON AUGER DANS LES SEMICONDUCTEURS DE TYPE P A BANDE ETROITEGEL'MONT BL.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 7; PP. 1316-1319; BIBL. 7 REF.Article

Theory and modeling of type-II strained-layer superlattice detectorsFLATTE, Michael E; GREIN, Christoph H.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7222, issn 0277-786X, isbn 978-0-8194-7468-1 0-8194-7468-1, 1Vol, 72220Q.1-72220Q.9Conference Paper

Beyond the ABC : Carrier recombinations in semiconductor lasersHADER, J; MOLONEY, J. V; KOCH, S. W et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, pp 61151T.1-61151T.7, issn 0277-786X, isbn 0-8194-6157-1, 1VolConference Paper

Theoretical prediction of the impact of Auger recombination on charge collection from an ion trackEDMONDS, L. D.IEEE transactions on nuclear science. 1991, Vol 38, Num 5, pp 999-1004, issn 0018-9499Article

Intervalence-band absorption in relation to Auger recombination in laser materialsTAKESHIMA, M.Japanese journal of applied physics. 1984, Vol 23, Num 4, pp 428-435, issn 0021-4922, 1Article

AUGER RECOMBINATION RATE IN INGAASP LASERSBURT MG.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 19; PP. 806-807; BIBL. 12 REF.Article

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ESTIMATION OF SECOND-ORDER AUGER RECOMBINATION IN LEAD CHALCOGENIDESZIEP O.1983; PHYSICA STATUS SOLIDI. (B). BASIC RESEARCH; ISSN 0370-1972; DDR; DA. 1983; VOL. 115; NO 1; PP. 161-170; ABS. GER; BIBL. 20 REF.Article

THE EQUIVALENCE OF TWO RECENT AUGER RECOMBINATION RATE CALCULATIONSROBBINS DJ; YOUNG A.1980; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1980; VOL. 102; NO 2; PP. K143-K147; BIBL. 5 REF.Article

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The influence of screening on the Auger coefficient of 1.3 μm InGaAsP lattice matched to InPYEVICK, D; BARDYSZEWSKI, W.IEEE journal of quantum electronics. 1987, Vol 23, Num 2, pp 168-170, issn 0018-9197Article

Carrier loss resulting from Auger recombination in InGaAsP/InP double heterojunction laser diodes: spectroscopy of 950 nm high energy emissionWEIHUA ZHUANG; BAOZHEN ZHENG; JUNYING XU et al.IEEE journal of quantum electronics. 1985, Vol 21, Num 6, pp 712-715, issn 0018-9197Article

Temperature dependence of carrier lifetime and Auger recombination in 1.3 υm InGaAsPSERMAGE, B; HERITAGE, J. P; DUTTA, N. K et al.Journal of applied physics. 1985, Vol 57, Num 12, pp 5443-5449, issn 0021-8979Article

Phonon-assisted Auger recombination in a quasi-two-dimensional structure se miconductorTAKESHIMA, M.Physical review. B, Condensed matter. 1984, Vol 30, Num 6, pp 3302-3308, issn 0163-1829Article

Theory of second-order Auger recombination in strong degenerate small-gap semiconductors: application to PbSSeBEILER, M; MOCKER, M; ZIEP, O et al.Physica status solidi. B. Basic research. 1984, Vol 123, Num 1, pp 247-255, issn 0370-1972Article

Effect of auger recombination on the threshold characteristics of gain-guided InGaAsP lasersAGRAWAL, G. P; DUTTA, N. K.Electronics Letters. 1983, Vol 19, Num 23, pp 974-976, issn 0013-5194Article

Multiphonon broadening of impact ionisation and Auger recombination involving traps in semiconductorsROBBINS, D. J.Journal of physics. C. Solid state physics. 1983, Vol 16, Num 19, pp 3825-3840, issn 0022-3719Article

On the theory of Auger recombination in slightly compensated heavity doped semiconductorsDOAN NHAT QUANG.Journal of the Physical Society of Japan. 1991, Vol 60, Num 11, pp 3761-3767, issn 0031-9015Article

Band-structure engineering for low-threshold high-efficiency semiconductor lasersADAMS, A. R.Electronics Letters. 1986, Vol 22, Num 5, pp 249-250, issn 0013-5194Article

Compositional dependence of the Auger coefficient for InGaAsP lattice matched to InPBARDYSZEWSKI, W; YEVICK, D.Journal of applied physics. 1985, Vol 58, Num 7, pp 2713-2723, issn 0021-8979Article

Lifetime and efficiency limits of crystalline silicon solar cellsKERR, Mark J; CAMPBELL, Patrick; CUEVAS, Andres et al.sans titre. 2002, pp 438-441, isbn 0-7803-7471-1, 4 p.Conference Paper

Théorie de la variation thermique du courant de seuil des lasers à injection à base de semiconducteurs du type Pb1-xSnxTeLUBASHEVSKIJ, I. A; RYZHIJ, V. I; MIZERINA, N. YU et al.Fizika i tehnika poluprovodnikov. 1983, Vol 17, Num 9, pp 1631-1634, issn 0015-3222Article

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