kw.\*:("Recombinaison superficielle")
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The influence of light intensity on surface recombination in GaS single crystalsSZALAJKO, Maria; NOWAK, Marian.Applied surface science. 2007, Vol 253, Num 7, pp 3636-3641, issn 0169-4332, 6 p.Article
Passivations volumiques et superficielles de photopiles au silicium multicristallin = Bulk and surface passivation of multicrystalline silicon solar cellsTorchio, Philippe; Martinuzzi, Santo.1992, 166 p.Thesis
THE EFFECT OF SURFACE RECOMBINATION ON PIN DIODESAITCHISON JM; BERZ F.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 9; PP. 795-804; BIBL. 12 REF.Article
Diffusion length measurement with a quick EBIC techniqueBOUDJANI, A.Semiconductor science and technology. 2005, Vol 20, Num 2, pp 175-179, issn 0268-1242, 5 p.Article
Surface recombination model of visible luminescence in porous siliconHAJNAL, Z; DEAK, P.Journal of non-crystalline solids. 1998, Vol 227-30, pp 1053-1057, issn 0022-3093, bConference Paper
Low surface recombination velocity and contact resistance using p + / p carbon-doped GaAs structuresLYON, T. J; KASH, J. A; TIWARI, S et al.Applied physics letters. 1990, Vol 56, Num 24, pp 2442-2444, issn 0003-6951Article
A PHOTOCONDUCTIVE METHOD FOR THE MEASUREMENT OF DIFFUSION LENGTH AND SURFACE RECOMBINATION VELOCITY IN THICK SEMICONDUCTORS.DEB S; MUKHERJEE MK; DUTT S et al.1974; INTERNATION. J. ELECTRON.; G.B.; DA. 1974; VOL. 36; NO 4; PP. 571-574; BIBL. 6 REF.Article
NEW SURFACE-CONTROLLED NEGATIVE-IMPEDANCE TRANSISTOR.HAYTHORNHWAITE RF; THOMAS RE.1974; ELECTRON. LETTERS; G.B.; DA. 1974; VOL. 10; NO 14; PP. 273-274; BIBL. 3 REF.Article
Dynamical Monte Carlo simulation of surface atomic recombinationGUERRA, V; LOUREIRO, J.Plasma sources science & technology (Print). 2004, Vol 13, Num 1, pp 85-94, issn 0963-0252, 10 p.Article
Étude des interactions entre une post-décharge d'azote en écoulement et des surfaces céramiques et métalliques. Modélisation de la recombinaison de l'azote atomique = Interactions between a nitrogen flowing post-discharge and ceramic and metallic surfaces. Modelling of nitrogen atoms recombinationLefèvre, Linda; Michel, Henri.1999, 172 p.Thesis
Reduction of space charge recombination current with a self Passivated GaAlAs/GaInP/GaAs HBT structureBOURGUIGA, R; PALMIER, J. F; DUBON-CHEVALLIER, C et al.Journal de physique. III (Print). 1997, Vol 7, Num 11, pp 2153-2157, issn 1155-4320Conference Paper
Influence d'un échauffement non homogène des porteurs de charge avec recombinaison Auger sur la photoconductivité des semiconducteursLUBASHEVSKIJ, I. A; PISHCHALKO, V. D; RYZHIJ, V. I et al.Fizika i tehnika poluprovodnikov. 1984, Vol 18, Num 10, pp 1823-1826, issn 0015-3222Article
Modelling bulk and surface recombination in the sidewall space-charge layer of an emitter-base junctionROULSTON, D. J; ELTOUKHY, A. A.IEE proceedings. Part I. Solid-state and electron devices. 1985, Vol 132, Num 5, pp 205-209, issn 0143-7100Article
Surface recombination at semiconductor electrodes. I: Transient and steady-state photocurrentsPETER, L. M; LI, J; PEAT, R et al.Journal of electroanalytical chemistry and interfacial electrochemistry. 1984, Vol 165, Num 1-2, pp 29-40, issn 0022-0728Article
Surface microcharacterization of silicon wafers by the light-beam-induced current technique in the planar configuration and by attenuated total reflection spectroscopySPADONI, S; ACCIARRI, M; NARDUCCI, D et al.Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic properties. 2000, Vol 80, Num 4, pp 579-585, issn 1364-2812Conference Paper
A surface recombination model applied to large features in inorganic phosphor efficiency measurements in the soft x-ray regionBENITEZ, E. L; HUSK, D. E; SCHNATTERLY, S. E et al.Journal of applied physics. 1991, Vol 70, Num 6, pp 3256-3260, issn 0021-8979Article
SURFACE RECOMBINATION AND INTERNAL CURRENTS IN A VERTICAL-JUNCTION SOLAR CELL.DHARIWAL SR; KOTHARI LS; JAIN SC et al.1975; J. PHYS. D; G.B.; DA. 1975; VOL. 8; NO 11; PP. 1321-1332; BIBL. 13 REF.Article
On Shockley-Read-Hall model with finite relaxation time of traps for surface recombination velocity in case of illuminationFLUERARU, C.Journal de physique. III (Print). 1995, Vol 5, Num 1, pp 33-42, issn 1155-4320Article
Influence de la lumière sur la vitesse de recombinaison superficielle des particules atomiquesSUKHAREV, V. YA; MYASNIKOV, I. A.Kinetika i kataliz. 1985, Vol 26, Num 1, pp 51-55, issn 0453-8811Article
The concept of an effective surface recombination rate for solving problems of carrier transfer in photoconvertersAVERBUKH, T. G; MILOVANOV, A. F.Applied solar energy. 1995, Vol 31, Num 5, pp 1-4, issn 0003-701XArticle
Surface recombination in photoconductorsGOPAL, V.Acta paediatrica scandinavica. 1985, Vol 25, Num 4, pp 615-618, issn 0001-656XArticle
Contribution à l'étude de l'influence des phénomènes d'auto-absorption sur la recombinaison des porteurs dans les semiconducteursBensaïd, Bachir; Raymond, Frédéric.1989, 185 p.Thesis
INTERPRETATION D'EFFETS PHOTOELECTRIQUES STATIONNAIRES SENSIBLES A LA SURFACE DANS LES SEMICONDUCTEURS QUASI-MONOPOLAIRESSACHENKO AV.1974; UKRAIN. FIZ. ZH.; S.S.S.R.; DA. 1974; VOL. 19; NO 10; PP. 1585-1593; ABS. ANGL.; BIBL. 18 REF.Article
CALCUL DU COURANT DE DIFFUSION D'UNE DIODE SEMICONDUCTRICE A BASE FINIEFINKEL'SHTEJN E YA.1972; LATV. P.S.R. ZINAT. AKAD. VEST., FIZ. TEH. ZINAT. SER.; S.S.S.R.; DA. 1972; NO 4; PP. 15-24; ABS. ANGL.; BIBL. 4 REF.Serial Issue
RECOMBINATION IN HEAVILY DOPED PLANAR DIODESPOSSIN GE; KIRKPATRICK CG.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 5; PP. 3478-3483; BIBL. 11 REF.Article