Passivations volumiques et superficielles de photopiles au silicium multicristallin = Bulk and surface passivation of multicrystalline silicon solar cellsTorchio, Philippe; Martinuzzi, Santo.1992, 166 p.Thesis

THE EFFECT OF SURFACE RECOMBINATION ON PIN DIODESAITCHISON JM; BERZ F.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 9; PP. 795-804; BIBL. 12 REF.Article

Diffusion length measurement with a quick EBIC techniqueBOUDJANI, A.Semiconductor science and technology. 2005, Vol 20, Num 2, pp 175-179, issn 0268-1242, 5 p.Article

Surface recombination model of visible luminescence in porous siliconHAJNAL, Z; DEAK, P.Journal of non-crystalline solids. 1998, Vol 227-30, pp 1053-1057, issn 0022-3093, bConference Paper

Low surface recombination velocity and contact resistance using p ⁺ / p carbon-doped GaAs structuresLYON, T. J; KASH, J. A; TIWARI, S et al.Applied physics letters. 1990, Vol 56, Num 24, pp 2442-2444, issn 0003-6951Article

Modelling bulk and surface recombination in the sidewall space-charge layer of an emitter-base junctionROULSTON, D. J; ELTOUKHY, A. A.IEE proceedings. Part I. Solid-state and electron devices. 1985, Vol 132, Num 5, pp 205-209, issn 0143-7100Article

Surface recombination at semiconductor electrodes. I: Transient and steady-state photocurrentsPETER, L. M; LI, J; PEAT, R et al.Journal of electroanalytical chemistry and interfacial electrochemistry. 1984, Vol 165, Num 1-2, pp 29-40, issn 0022-0728Article

Surface microcharacterization of silicon wafers by the light-beam-induced current technique in the planar configuration and by attenuated total reflection spectroscopySPADONI, S; ACCIARRI, M; NARDUCCI, D et al.Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic properties. 2000, Vol 80, Num 4, pp 579-585, issn 1364-2812Conference Paper

A surface recombination model applied to large features in inorganic phosphor efficiency measurements in the soft x-ray regionBENITEZ, E. L; HUSK, D. E; SCHNATTERLY, S. E et al.Journal of applied physics. 1991, Vol 70, Num 6, pp 3256-3260, issn 0021-8979Article

SURFACE RECOMBINATION AND INTERNAL CURRENTS IN A VERTICAL-JUNCTION SOLAR CELL.DHARIWAL SR; KOTHARI LS; JAIN SC et al.1975; J. PHYS. D; G.B.; DA. 1975; VOL. 8; NO 11; PP. 1321-1332; BIBL. 13 REF.Article

On Shockley-Read-Hall model with finite relaxation time of traps for surface recombination velocity in case of illuminationFLUERARU, C.Journal de physique. III (Print). 1995, Vol 5, Num 1, pp 33-42, issn 1155-4320Article

Influence de la lumière sur la vitesse de recombinaison superficielle des particules atomiquesSUKHAREV, V. YA; MYASNIKOV, I. A.Kinetika i kataliz. 1985, Vol 26, Num 1, pp 51-55, issn 0453-8811Article

RECOMBINATION IN HEAVILY DOPED PLANAR DIODESPOSSIN GE; KIRKPATRICK CG.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 5; PP. 3478-3483; BIBL. 11 REF.Article

INFLUENCE DE LA GEOMETRIE ET DE LA VITESSE DE RECOMBINAISON SUPERFICIELLE SUR LE COURANT DE DIFFUSION DES DIODES MICRO-ALLIEESAFANAS'EV II.1972; LATV. P.S.R. ZINAT. AKAD. VEST., FIZ. TEH. ZINAT. SER.; S.S.S.R.; DA. 1972; NO 4; PP. 41-51; ABS. ANGL.; BIBL. 5 REF.Serial Issue

ANALYSIS OF ELECTRON BEAM INDUCED CURRENT CONSIDERING SAMPLE DIMENSIONS: MEASUREMENT OF DIFFUSION LENGTH AND SURFACE RECOMBINATION VELOCITYFUYUKI T; MATSUNAMI H.1981; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1981; VOL. 20; NO 4; PP. 745-751; BIBL. 8 REF.Article

SURFACE (CATALYTIC) REACTIONS ON UPPER ATMOSPHERIC AEROSOLS.OLIVERO JJ.1974; J. GEOPHYS. RES.; U.S.A.; DA. 1974; VOL. 79; NO 3; PP. 476-478; BIBL. 18 REF.Article

ON THE EFFECT OF SURFACE RECOMBINATION ON SOME PROPERTIES OF SEMICONDUCTOR DEVICESKURJATA PFITZNER E.1980; SURF. TECHNOL.; ISSN 0376-4583; CHE; DA. 1980; VOL. 10; NO 4; PP. 259-275; BIBL. 15 REF.Article

Diagnostics of large-area solar cell homogeneity using LBIV methodBENDA, V; ASRESAHEGN, A. L.International conference on microelectronics. 2004, isbn 0-7803-8166-1, 2Vol, vol 2, 671-674Conference Paper

Mixing 2D electrons and atomic hydrogen on the liquid helium surfaceARAI, Toshikazu; KONO, Kimitoshi.Physica. B, Condensed matter. 2003, Vol 329-33, pp 415-418, issn 0921-4526, 4 p.Conference Paper

Interface recombination in amorphous/crystalline silicon solar cells, a simulation studyFROITZHEIM, A; STANGL, R; ELSTNER, L et al.sans titre. 2002, pp 1238-1241, isbn 0-7803-7471-1, 4 p.Conference Paper

Etude par spectroscopie de la cinétique des décharges électriques dans les mélanges N₂-O₂ = Spectroscopic study of the neutral kinetics in N₂-O₂ electrical dischargesCartry, Gilles; Cernogora, Goy.1999, 232 p.Thesis

Interfacial dynamic velocity for solar cell characterizationFARAH, J; AZAR, B; KHOURY, A et al.Active and passive electronic components. 1997, Vol 20, Num 2, pp 95-103, issn 0882-7516Article

On the photoelectric properties of thin graded-band-gap semiconductor layersSOKOLOVSKII, B. S.Physica status solidi. A. Applied research. 1997, Vol 161, Num 1, pp 105-110, issn 0031-8965Article

ETUDE DE LA RECOMBINAISON HETEROGENE DE L'HYDROGENE ATOMIQUE EN MILIEU PLASMA BASSE PRESSION = STUDY OF HETEROGENEOUS RECOMBINATION OF HYDROGEN ATOMS IN LOW PRESSURE PLASMABounabi, Lahoucine; Ranson, Pierre.1996, 158 p.Thesis

Note on the interpretation of injection-level-dependent surface recombination velocitiesBRENDEL, R.Applied physics. A, Materials science & processing (Print). 1995, Vol 60, Num 5, pp 523-524, issn 0947-8396Article