Characteristic features in RHEED patterns of disordered surfaces: theoretical considerationsMEYER-EHMSEN, G; BOLGER, B; LARSEN, P. K et al.Surface science. 1989, Vol 224, Num 1-3, pp 591-612, issn 0039-6028Article

Si(111) surface cleaning using atomic hydrogen and SiH₂ studied using reflection high-energy electron diffractionHIRAYAMA, H; TATSUMI, T.Journal of applied physics. 1989, Vol 66, Num 2, pp 629-633, issn 0021-8979, 5 p.Article

The origin of circular arc in RHEED: 1D ordered surfaceKAWAMURA, T; HASEBE, M; DOBSON, P. J et al.Journal of the Physical Society of Japan. 1985, Vol 54, Num 10, pp 3675-3678, issn 0031-9015Article

Scanning tunneling microscopy study of the fivefold surface of icosahedral Al-Cu-Ru quasicrystalSHIMODA, M; SHARMA, H. R; TSAI, A.-P et al.Surface science. 2005, Vol 598, Num 1-3, pp 88-95, issn 0039-6028, 8 p.Article

Analysis of intensity data for RHEED by the MgO(001) surfaceMAKSYM, P. A.Surface science. 1985, Vol 149, Num 1, pp 157-174, issn 0039-6028Article

Analysis of reflection high-energy electron-diffraction data from reconstructed semiconductor surfacesJOYCE, B. A; NEAVE, J. H; DOBSON, P. J et al.Physical review. B, Condensed matter. 1984, Vol 29, Num 2, pp 814-819, issn 0163-1829Article

Tin dioxide with the CaF₂ structure in thin tin oxide filmsPENEVA, S. K; RUDARSKA, R. K; NIHTIANOVA, D. D et al.Thin solid films. 1984, Vol 112, Num 3, pp 247-255, issn 0040-6090Article

RHEED intensity analysis of Si(111) 7×7 and v3×v3-Ag surfaces. I: Kinematic diffraction approachHORIO, Y; ICHIMIYA, A.Surface science. 1983, Vol 133, Num 2-3, pp 393-400, issn 0039-6028Article

Kinematical analysis of RHEED intensities from the Si(111)7×7 structureHORIO, Y; ICHIMIYA, A.Surface science. 1989, Vol 219, Num 1-2, pp 128-142, issn 0039-6028, 15 p.Article

Mean inner potentials of aluminium and copper = Potentiels internes moyens de l'aluminium et du cuivreOCHANDO, M. A; SANCHEZ, A; SERNA, C. R et al.Journal of physics. C. Solid state physics. 1983, Vol 16, Num 13, pp L401-L403, issn 0022-3719Article

Influence of boron on the initial stages of Si molecular beam epitaxy on Si(111) studied by reflection high-energy electron diffractionFISSEL, Andreas; KRÜGENER, Jan; OSTEN, Hans Jörg et al.Surface science. 2009, Vol 603, Num 3, pp 477-481, issn 0039-6028, 5 p.Article

Surface reconstructions on Sb-irradiated GaAs(001) formed by molecular beam epitaxyKAKUDA, Naoki; TSUKAMOTO, Shiro; ISHII, Akira et al.Microelectronics journal. 2007, Vol 38, Num 4-5, pp 620-624, issn 0959-8324, 5 p.Article

Growth of oriented crystalline Ag nanoislands on air-exposed Si(0 0 1) surfacesROY, A; BHATTACHARJEE, K; DASH, J. K et al.Applied surface science. 2009, Vol 256, Num 2, pp 361-364, issn 0169-4332, 4 p.Conference Paper

Plasmon emission by electrons in reflection high energy electron diffractionBEEBY, J. L.Surface science. 2004, Vol 565, Num 2-3, pp 129-143, issn 0039-6028, 15 p.Article

Steps and islands on vicinal silicon (001) surfaces grown by molecular-beam epitaxy in an As₄ atmosphereDÄWERITZ, L; CROOK, G. E; PLOOG, K et al.Physical review. B, Condensed matter. 1991, Vol 44, Num 7, pp 3083-3089, issn 0163-1829Article

Phase of reflection high-energy electron-diffraction intensity oscillations during molecular-beam-epitaxy growth of GaAs(100)RESH, J; JAMISON, K. D; STROZIER, J et al.Physical review. B, Condensed matter. 1990, Vol 40, Num 17, pp 11799-11803, issn 0163-1829, 5 p.Article

Ion beam enhanced epitaxial growth of Ge (001)CHASON, E; BEDROSSIAN, P; HORN, K. M et al.Applied physics letters. 1990, Vol 57, Num 17, pp 1793-1795, issn 0003-6951Article

Electron inelastic plasmon scattering and its resonance propagation at crystal surfaces in RHEEDWANG, Z. L; LIU, J; COWLEY, J. M et al.Acta crystallographica. Section A, Foundations of crystallography. 1989, Vol 45, Num 5, pp 325-333, issn 0108-7673Article

Streaking of reflection high energy electron diffraction spots as a result of refraction on a curved specimen surfaceTUNG HSU; LEHMPFUHL, G.Ultramicroscopy. 1989, Vol 27, Num 4, pp 359-365, issn 0304-3991, 7 p.Article

RHEED calculations for non-symmetrcial incidence close to a surface Bragg conditionSMITH, A. E.Ultramicroscopy. 1989, Vol 31, Num 4, pp 431-436, issn 0304-3991Article

Papers/Electron diffraction and channeling at Kilovolt energies, workshop, Wickenburg Inn, Arizona, USA, 10-14 January 1988SPENCE, J. C. H.Ultramicroscopy. 1988, Vol 26, Num 1-2, issn 0304-3991, XIII-254 pConference Proceedings

Analysis of RHEED intensities from the Si(001) surfaceASHBY, J. V; NORTON, N; MAKSYM, P. A et al.Surface science. 1986, Vol 175, Num 3, pp 604-622, issn 0039-6028Article

Observation of Si(111) and gold-deposited Si(111) surfaces using micro-probe reflection high-energy electron diffractionICHIKAWA, M; DOI, T; HAYAKAWA, K et al.Surface science. 1985, Vol 159, Num 1, pp 133-148, issn 0039-6028Article

High dose rate effect of focused-ion-beam boron implantation into siliconTAMURA, M; SHUKURI, S; ISHITANI, T et al.Japanese journal of applied physics. 1984, Vol 23, Num 6, pp L417-L420, issn 0021-4922, 2Article

Effect of surfactants on surface migration in Si MBESAKAMOTO, K; MIKI, K; SAKAMOTO, T et al.Journal of crystal growth. 1993, Vol 127, Num 1-4, pp 392-395, issn 0022-0248Conference Paper