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Results 1 to 25 of 133

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LEED analysis of a nickel cylindrical single crystalMOM, Rik V; HAHN, Christine; JACOBSE, Leon et al.Surface science. 2013, Vol 613, pp 15-20, issn 0039-6028, 6 p.Article

Step flow growth of vicinal (111)si surface at high temperatures: step kinetics or surface diffusion controlMETOIS, J. J; HEYRAUD, J. C; STOYANOV, S et al.Surface science. 2001, Vol 486, Num 1-2, pp 95-102, issn 0039-6028Article

Kinetic step bunching instability during surface growthFRISCH, Thomas; VERGA, Alberto.Physical review letters. 2005, Vol 94, Num 22, pp 226102.1-226102.4, issn 0031-9007Article

Instability of vicinal crystal surfaces with transparent steps: Transient kinetics and non-local electromigrationRANGUELOV, B; STOYANOV, S.Surface science. 2009, Vol 603, Num 18, pp 2915-2919, issn 0039-6028, 5 p.Article

Effect of step permeability on step instabilities due to alternation of kinetic coefficients on a growing vicinal faceSATO, M.The European physical journal. B, Condensed matter physics. 2007, Vol 59, Num 3, pp 311-318, issn 1434-6028, 8 p.Article

Nanoscale structures formed in silicon cleavage studied with large-scale electronic structure calculations : Surface reconstruction, steps, and bendingHOSHI, Takeo; IGUCHI, Yusuke; FUJIWARA, Takeo et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 7, pp 075323.1-075323.10, issn 1098-0121Article

Step wandering due to the structural difference of the upper and the lower terracesKATO, R; UWAHA, M; SAITO, Y et al.Surface science. 2004, Vol 550, Num 1-3, pp 149-165, issn 0039-6028, 17 p.Article

Self-assembled growth and magnetotransport investigations on strained Si/SiGe multilayers on vicinal (113)-Si surfacesNEUMANN, R; ZHU, J; BRUNNER, K et al.Thin solid films. 2000, Vol 380, Num 1-2, pp 124-126, issn 0040-6090Conference Paper

Growth of step bunches formed by the drift of adatomsSATO, M; UWAHA, M.Surface science. 1999, Vol 442, Num 2, pp 318-328, issn 0039-6028Article

Step formation on hydrogen-etched 6H-SiC{0001} surfacesNIE, S; LEE, C. D; FEENSTRA, R. M et al.Surface science. 2008, Vol 602, Num 17, pp 2936-2942, issn 0039-6028, 7 p.Article

What causes step bunching: negative Ehrlich-Schwoebel barrier versus positive incorporation barrierXIE, M. H; LEUNG, S. Y; TONG, S. Y et al.Surface science. 2002, Vol 515, Num 1, pp L459-L463, issn 0039-6028Article

Structure of vicinal surfaces of alloys : Cu-Pd(17%)(1 15)LE GOFF, E; ARFAOUI, I; BARBIER, L et al.Surface science. 2001, Vol 481, Num 1-3, pp 215-225, issn 0039-6028Article

DC heating-induced step instability on Si(001) vicinal surfacesNISHIMURA, H; MINODA, H; TANISHIRO, Y et al.Surface science. 1999, Vol 442, Num 2, pp L1006-L1012, issn 0039-6028Article

Behavior of the (0001) surface of sapphire upon high-temperature annealingPRIMOZ REBERNIK RIBIC; BRATINA, Gvido.Surface science. 2007, Vol 601, Num 1, pp 44-49, issn 0039-6028, 6 p.Article

Step mediated surface alloy formation of Pt/Cu(111)DASTOOR, P. C; O'CONNOR, D. J; MACLAREN, D. A et al.Surface science. 2005, Vol 588, Num 1-3, pp 101-107, issn 0039-6028, 7 p.Article

Atomistic modeling of step formation and step bunching at the Ge(105) surfaceCEREDA, S; MONTALENTI, F; MIGLIO, Leo et al.Surface science. 2005, Vol 591, Num 1-3, pp 23-31, issn 0039-6028, 9 p.Article

Anisotropy of mass transport on Si(001) surfaces heated with direct currentNIELSEN, J.-F; PETTERSEN, M. S; PELZ, J. P et al.Surface science. 2001, Vol 480, Num 1-2, pp 84-96, issn 0039-6028Article

Scaling properties of step bunches formed on vicinal crystal surfaces during MBE growthSTOYANOV, S.Surface science. 2000, Vol 464, Num 1, pp L715-L718, issn 0039-6028Article

Growth Law of Bunch Size in Step Bunching Induced by Flow in SolutionSATO, Masahide.Journal of the Physical Society of Japan. 2011, Vol 80, Num 2, issn 0031-9015, 024604.1-024604.4Article

Stable surface termination on vicinal 6H-SiC(0001) surfacesHAYASHI, Kenjiro; MORITA, Kouhei; MIZUNO, Seigi et al.Surface science. 2009, Vol 603, Num 3, pp 566-570, issn 0039-6028, 5 p.Article

Drift-induced step instabilities on Si(111) vicinal face near 1x1 ↔ 7x7 transition temperatureIKAWA, Kenta; SATO, Masahide; UWAHA, Makio et al.Journal of the Physical Society of Japan. 2007, Vol 76, Num 6, issn 0031-9015, 064602.1-064602.7Article

Faster simulations of step bunching during anisotropic etching : formation of zigzag structures on Si(1 10)GOSALVEZ, M. A; XING, Y; HYNNINEN, T et al.Journal of micromechanics and microengineering (Print). 2007, Vol 17, Num 4, issn 0960-1317, S27-S37Conference Paper

Steps on surfaces : experiment and theoryJEONG, H.-C; WILLIAMS, E. D.Surface science reports. 1999, Vol 34, Num 6-8, pp 171-294, issn 0167-5729Article

Step-bunching in 6H-SiC growth by sublimation epitaxySYVÄJÄRVI, M; YAKIMOVA, R; JANZEN, E et al.Journal of physics. Condensed matter (Print). 1999, Vol 11, Num 49, pp 10019-10024, issn 0953-8984Conference Paper

Structural- and chemical-phase-separation on single crystalline sapphire (0001) surfacesISONO, Toshinari; IKEDA, Takayuki; AOKI, Ryuji et al.Surface science. 2010, Vol 604, Num 21-22, pp 2055-2063, issn 0039-6028, 9 p.Article

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