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Resolution characterization of a novel silicone-based positive photoresistTANAKA, A; BAN, H; IMAMURA, S et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1989, Vol 7, Num 3, pp 572-575, issn 0734-211X, 4 p.Article

Electron beam resist system ― A critical review of recent developmentsWATTS, M. P. C.Solid state technology. 1984, Vol 27, Num 2, pp 111-113, issn 0038-111XArticle

Positive photoresist polymerization through pulsed photomagnetic curingRUGGERIO, P. A.Solid state technology. 1984, Vol 27, Num 3, pp 165-169, issn 0038-111XArticle

Bake effects in positive photoresistBATCHELDER, T; PIATT, J.Solid state technology. 1983, Vol 26, Num 8, pp 211-217, issn 0038-111XArticle

POSITIVE RESIST MATERIAL REQUIREMENTS FOR VLSI DEVICE FABRICATION. IIELLIOTT DJ.1982; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1982; VOL. 25; NO 12; PP. 91-95; BIBL. 11 REF.Article

ELIMINATION DES IMPURETES MINERALES DES RESISTANCES PHOTOSENSIBLES PAR LA CATIONITE KU-2 X 8MIRONOV MS; TAUSHKANOV VP; MARKOVA TP et al.1981; Z. PRIKL. HIM.; ISSN 0044-4618; SUN; DA. 1981; VOL. 54; NO 10; PP. 2321-2323; BIBL. 3 REF.Article

CHARACTERIZATION OF POSITIVE RESIST DEVELOPMENTO'TOOLE MM; GRANDE WJ.1981; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1981; VOL. 2; NO 12; PP. 311-313; BIBL. 8 REF.Article

A novel chemically amplified positive deep UV photoresist with significantly reduced sensitivity to environmental contaminationCHATTERJEE, S; JAIN, S; LU, P. H et al.Polymer engineering and science. 1992, Vol 32, Num 21, pp 1571-1577, issn 0032-3888Conference Paper

Effet de photogravure des résists positifs à l'aide d'un rayonnement impulsionnel X d'un plasma de laserBOJKO, V. A; VAJNER, A. YA; KIREEVA, S. A et al.Žurnal tehničeskoj fiziki. 1983, Vol 53, Num 7, pp 1402-1403, issn 0044-4642Article

OPTICAL REQUIREMENTS FOR PROJECTION LITHOGRAPHYOLDHAM WG; SUBRAMANIAN S; NEUREUTHER AR et al.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 10; PP. 975-980; BIBL. 17 REF.Article

DETAILED CONTRAST (GAMMA -VALUE) MEASUREMENTS OF POSITIVE ELECTRON RESISTSHARADA K; TAMAMURA T; KOGURE O et al.1982; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 11; PP. 2576-2580; BIBL. 10 REF.Article

Design of a positive resist for projection lithography in the mid-UVWILLSON, G; MILLER, R; MCKEAN, D et al.Polymer engineering and science. 1983, Vol 23, Num 18, pp 1004-1011, issn 0032-3888Article

Progress toward developing high performance 193nm single layer positive resist based on functionalized poly(norbornenes)RAO VARANASI, P; JORDHAMO, G; ITO, H et al.SPIE proceedings series. 2000, pp 1157-1162, isbn 0-8194-3617-8Conference Paper

Kinetic study of NH₃-catalyzed image reversal in positive photoresistWOLK, G. L; ZIGER, D. H.Industrial & engineering chemistry research. 1991, Vol 30, Num 7, pp 1461-1468, issn 0888-5885, 8 p.Article

Modeling thermal effects for simulation of post exposure baking (PEB) process in positive photoresistASAI, S; HANYU, I; NUNOKAWA, M et al.Japanese journal of applied physics. 1991, Vol 30, Num 3, pp 612-614, issn 0021-4922, 1Article

Toward controlled resist line edge roughness : Material origin of line edge roughness in chemically amplified positive-tone resistsQINGHUANG LIN; SOORIYAKUMARAN, Ratnam; HUANG, Wu-Song et al.SPIE proceedings series. 2000, pp 230-239, isbn 0-8194-3617-8Conference Paper

On-line state and parameter identification of positive photoresist developmentCARROLL, T. A; RAMIREZ, W. F.AIChE journal. 1990, Vol 36, Num 7, pp 1046-1053, issn 0001-1541Article

Effect of acid labile ether protecting groups on the oxide-etch resistance and lithographic performance of 248nm resistsVARANASI, P. Rao; CORNETT, K; LAWSON, M. C et al.SPIE proceedings series. 2000, pp 322-327, isbn 0-8194-3617-8Conference Paper

Contrast enhancing additives for positive photoresistPAMPALONE, T. R; KUYAN, F. A.Journal of the Electrochemical Society. 1988, Vol 135, Num 2, pp 471-476, issn 0013-4651Article

Plasma-developable electron-beam resistsYONEDA, Y; FUKUYAMA, S.-I.Fujitsu scientific and technical journal. 1987, Vol 23, Num 1, pp 37-43, issn 0016-2523Article

Characterization of a positive resist and the application of proximity effect correction in electron-beam direct writeTAN, Z. C. H; STANDIFORD, K; LEM, H. Y et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1992, Vol 10, Num 6, pp 3099-3103, issn 1071-1023Conference Paper

A new method of evaluation of the effect of electron beam and developing process on positive polymeric resistsPELZBAUER, Z; WAGNER, R.Journal of applied polymer science. 1984, Vol 29, Num 4, pp 1427-1432, issn 0021-8995Article

The role of inorganic materials in dry-processed resist technologyTAYLOR, G. N; WOLF, T. M; STILLWAGON, L. E et al.Solid state technology. 1984, Vol 27, Num 2, pp 145-155, issn 0038-111XArticle

PLASMA FORMATION OF BUFFER LAYERS FOR MULTILAYER RESIST STRUCTURESDOBKIN DM; CANTOS BD.1981; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1981; VOL. 2; NO 9; PP. 222-224; BIBL. 10 REF.Article