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Contribution à la compréhension de fonctionnements particuliers du transistor bipolaire en hyperfréquences = Understanding some operating modes of microwave bipolar transistorDRUELLE, Yves.1985, 368 pThesis

Photoacid generator study for a chemically-amplified negative resist for high resolution lithographyDENTINGER, P. M; KNAPP, K. G; REYNOLDS, G. W et al.SPIE proceedings series. 1998, pp 568-579, isbn 0-8194-2776-4Conference Paper

Kinetic model and simulation for chemical amplification resistsFUKUDA, H; OKAZAKI, S.Journal of the Electrochemical Society. 1990, Vol 137, Num 2, pp 675-679, issn 0013-4651Article

Crosslinking in halogen containing novolac electron beam negative resistsLAMPE, I. V; REINHARDT, M.Polymer engineering and science. 1995, Vol 35, Num 2, pp 180-183, issn 0032-3888Article

Electron beam lithography in passivated gold nanoclustersBEDSON, T. R; PALMER, R. E; WILCOXON, J. P et al.Microelectronic engineering. 2001, Vol 57-58, pp 837-841, issn 0167-9317Conference Paper

Negative differential resistance (NDR) frequency conversion with gainHWU, R. J; DJUANDI, A; LEE, S. C et al.IEEE transactions on microwave theory and techniques. 1993, Vol 41, Num 5, pp 890-893, issn 0018-9480Article

Lithographic performance of advanced, thin resistsWILLIAMSON, Mike; NEUREUTHER, Andy.SPIE proceedings series. 2000, pp 1189-1197, isbn 0-8194-3617-8Conference Paper

Study of Bi-layer negative-tone silylation process for 193-nm lithographyWATANABE, H; SATOU, I; ENDO, M et al.SPIE proceedings series. 2000, pp 980-991, isbn 0-8194-3617-8Conference Paper

High resolution studies on Hoechst AZ PN114 chemically amplified resistMACINTYRE, D; THOMS, S.Microelectronic engineering. 1996, Vol 30, Num 1-4, pp 327-330, issn 0167-9317Conference Paper

New nonthermal mechanism for negative differential resistance in heterojunction bipolar transistorsLEE, T.-W; HOUSTON, P. A.Applied physics letters. 1993, Vol 62, Num 15, pp 1777-1779, issn 0003-6951Article

Computer analysis of negative resistance profiles in silicon double drift diodes including the Carrier diffusion effectDASH, G. N; PATI, S. P.Physica status solidi. A. Applied research. 1991, Vol 127, Num 2, pp 577-590, issn 0031-8965Article

Direct form active-R synthesis techniques and their critical assessmentSIDDIQI, M. A; AHMED, M. T.International journal of electronics. 1991, Vol 71, Num 4, pp 621-635, issn 0020-7217Article

High resolution electron beam lithography with a polydiacetylene negative resist at 50 kVDOBISZ, E. A; MARRIAN, C. R. K; COLTON, R. J et al.Journal of applied physics. 1991, Vol 70, Num 3, pp 1793-1799, issn 0021-8979Article

Measurement of negative differential conductance to 40 GHz for vertically integrated resonant tunneling diodesMOUNAIX, P; BEDU, P; LIPPENS, D et al.Electronics Letters. 1991, Vol 27, Num 15, pp 1358-1360, issn 0013-5194Article

Geometry effects on the GaAs bipolar-unipolar negative differential resistance transistorYARN, K. F; WANG, Y. H; CHANG, C. Y et al.Solid-state electronics. 1989, Vol 32, Num 9, pp 755-760, issn 0038-1101Article

Memory phenomena in reactively-evaporated AlOx and GeOx thin filmsBEYNON, J; EL-SAMANOUDY, M. M.Journal of materials science letters. 1987, Vol 6, Num 12, pp 1447-1449, issn 0261-8028Article

Devil's staircase route to chaos in a non-linear circuitCHUA, L. O; YAO, Y; YANG, Q et al.International journal of circuit theory and applications. 1986, Vol 14, Num 4, pp 315-329, issn 0098-9886Article

Power negative-resistance device by using complementary SITAKAMATSU, N.Transactions of the Institute of Electronics and Communication Engineers of Japan. Section E. 1986, Vol 69, Num 10, pp 1075-1076, issn 0387-236XArticle

Dry etching rate of electron-beam-exposed negative resistsMADJAROVA, N. A; PIRINOVA, T. P; TZANEVA, V. N et al.Semiconductor science and technology. 1992, Vol 7, Num 5, pp 691-693, issn 0268-1242Article

Polymersysteme für NegativröntgenresistsLAMPE, V. I; LORKOWSKI, H.-J; KUDRJASHOV, V. A et al.Journal für Signalaufzeichnungsmaterialien. 1990, Vol 18, Num 3, pp 205-209, issn 0323-598XArticle

Polysiloxanes with pendant cinnamoyl groups: as a negative deep UV resist for bilayer applicationROSILIO, C; ROSILIO, A; SERRE-MOUANDA, B et al.Journal of the Electrochemical Society. 1989, Vol 136, Num 8, pp 2350-2354, issn 0013-4651, 5 p.Article

On the design of optimal switched-capacitor filters based on the use of lossy frequency-dependent negative-resistance prototype structuresYOUNIS, A. T; MASSARA, R. E.IEE proceedings. Part G. Circuits devices and systems. 1989, Vol 136, Num 6, pp 351-357, issn 0956-3768Article

A negative, deep-UV resist for 248 nm lithographyO'TOOLE, M. M; DE GRANDPRE, M. P; FEELY, W. E et al.Journal of the Electrochemical Society. 1988, Vol 135, Num 4, pp 1026-1027, issn 0013-4651Article

Effect of molecular weight distribution on e-beam exposure properties of polystyreneKUMAR DEY, Ripon; BO CUI.Nanotechnology (Bristol. Print). 2013, Vol 24, Num 24, issn 0957-4484, 245302.1-245302.5Article

A study on post exposure delay of negative tone resist and its chemistryTOUKHY, Medhat; PAUNESCU, Margareta; CHUNWEI CHEN et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 7972, issn 0277-786X, isbn 978-0-8194-8531-1, 79721L.1-79721.7, 2Conference Paper

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