Characterization of diazonaphthoquinone-novolac resin-type positive photoresist for g-line and i-line exposure using water-soluble contrast enhancement materialsENDO, M; SASAGO, M; UENO, A et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1989, Vol 7, Num 3, pp 565-568, issn 0734-211X, 4 p.Article

Resolution characterization of a novel silicone-based positive photoresistTANAKA, A; BAN, H; IMAMURA, S et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1989, Vol 7, Num 3, pp 572-575, issn 0734-211X, 4 p.Article

A positive-working alkaline developable photoresist based on partially tert-boc-protected calix[4]resorcinarene and a photoacid generatorYOUNG-GIL, Kwon; JIN BAEK KIM; FUJIGAYA, Tsuyohiko et al.Journal of material chemistry. 2002, Vol 12, Num 1, pp 53-57, issn 0959-9428Article

DPN-generated nanostructures as positive resists for preparing lithographic masters or hole arraysSALAITA, Khalid S; SEUNG WOO LEE; GINGER, David S et al.Nano letters (Print). 2006, Vol 6, Num 11, pp 2493-2498, issn 1530-6984, 6 p.Article

Study of cross-linking reactions in negative-type thick-film resistsSENSU, Yoshihisa; SEKIGUCHI, Atsushi; KONO, Yoshiyuki et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, issn 0277-786X, isbn 0-8194-6196-2, 2Vol, Part 2, 61533S.1-61533S.12Conference Paper

A new positive resist based on poly(4-hydroxystyrene) for KrF excimer laser lithographyKIM, Ilho; PARK, Sang-Jin; LEE, Si-Hyung et al.Molecular crystals and liquid crystals science and technology. Section A, Molecular crystals and liquid crystals. 2000, Vol 349, pp 179-182, issn 1058-725XConference Paper

Approach for VUV positive resists using photodecomposable polymersKISHIMURA, Shinji; KATSUYAMA, Akiko; SASAGO, Masaru et al.SPIE proceedings series. 2000, pp 347-356, isbn 0-8194-3617-8Conference Paper

Photolacke für die Deep-UV-Lithographie = Photoresist for deep-UV lithographyFUNHOFF, D; SCHWALM, R.Farbe + Lack. 1992, Vol 98, Num 3, pp 171-175, issn 0014-7699Article

A novel chemically amplified positive deep UV photoresist with significantly reduced sensitivity to environmental contaminationCHATTERJEE, S; JAIN, S; LU, P. H et al.Polymer engineering and science. 1992, Vol 32, Num 21, pp 1571-1577, issn 0032-3888Conference Paper

Fluoropolymer-based resist materials for 157-nm lithographyTORIUMI, M; SHIDA, N; YAMAZAKI, T et al.Microelectronic engineering. 2002, Vol 61-62, pp 717-722, issn 0167-9317Conference Paper

New concept of contrast enhancement of resist and its application to positive-type resistYOSHIDA, Y; KUBOTA, S; ISHIBASHI, K et al.Journal of the Electrochemical Society. 1998, Vol 145, Num 4, pp 1335-1338, issn 0013-4651Article

Evaluation of onium salt cationic photoinitiators as novel dissolution inhibitor for novolac resinITO, H; FLORES, E.Journal of the Electrochemical Society. 1988, Vol 135, Num 9, pp 2322-2327, issn 0013-4651Article

Feasibility study of CARL DUV-positive resist for 30-kV electron beam application and status of further resist developmentKIRCH, O; ELIAN, K; SEIBOLD, K et al.Microelectronic engineering. 2001, Vol 57-58, pp 579-584, issn 0167-9317Conference Paper

High-performance 193-nm positive resist using alternating polymer system of functionalized cyclic olefins / maleic anhydrideDOUKI, Katsuji; KAJITA, Toru; SHIMOKAWA, Tsutomu et al.SPIE proceedings series. 2000, pp 1128-1135, isbn 0-8194-3617-8Conference Paper

Lithographic performance of advanced, thin resistsWILLIAMSON, Mike; NEUREUTHER, Andy.SPIE proceedings series. 2000, pp 1189-1197, isbn 0-8194-3617-8Conference Paper

Status and future of DUV photoresists for the semiconductor industryTHACKERAY, J. W.Microelectronic engineering. 1998, Vol 41-42, pp 37-40, issn 0167-9317Conference Paper

Effect of post-exposure delay in positive acting chemically amplified resists : an analytical studyNALAMASU, O; REICHMANIS, E; HANSON, J. E et al.Polymer engineering and science. 1992, Vol 32, Num 21, pp 1565-1570, issn 0032-3888Conference Paper

Shape of thick positive photoresist patternsKAWABE, T; ITO, T; FUYAMA, M et al.Journal of the Electrochemical Society. 1991, Vol 138, Num 3, pp 822-826, issn 0013-4651, 5 p.Article

Photochemical behavior of 2,6-dimethyl-3,5-dicarboxyalkyl-4-(2'-nitrophenyl)-1,4-dihydropyridines and application to a positive resistYAMAOKA, T; WATANABE, H; KOSEKI, K et al.Journal of imaging science. 1990, Vol 34, Num 2, pp 50-54, issn 8750-9237Article

Silicon-containing resists for 157 nm applicationsSOORIYAKUMARAN, Ratnam; FENZEL-ALEXANDER, Debra; FENDER, Nicolette et al.SPIE proceedings series. 2001, pp 319-326, isbn 0-8194-4031-0, 2VolConference Paper

Toward controlled resist line edge roughness : Material origin of line edge roughness in chemically amplified positive-tone resistsQINGHUANG LIN; SOORIYAKUMARAN, Ratnam; HUANG, Wu-Song et al.SPIE proceedings series. 2000, pp 230-239, isbn 0-8194-3617-8Conference Paper

On-line state and parameter identification of positive photoresist developmentCARROLL, T. A; RAMIREZ, W. F.AIChE journal. 1990, Vol 36, Num 7, pp 1046-1053, issn 0001-1541Article

Progress toward developing high performance 193nm single layer positive resist based on functionalized poly(norbornenes)RAO VARANASI, P; JORDHAMO, G; ITO, H et al.SPIE proceedings series. 2000, pp 1157-1162, isbn 0-8194-3617-8Conference Paper

Kinetic study of NH₃-catalyzed image reversal in positive photoresistWOLK, G. L; ZIGER, D. H.Industrial & engineering chemistry research. 1991, Vol 30, Num 7, pp 1461-1468, issn 0888-5885, 8 p.Article

Modeling thermal effects for simulation of post exposure baking (PEB) process in positive photoresistASAI, S; HANYU, I; NUNOKAWA, M et al.Japanese journal of applied physics. 1991, Vol 30, Num 3, pp 612-614, issn 0021-4922, 1Article