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Parameters extraction of a scalable mextram model for high-speed SiGe HBTsWU, H.-C; MIJALKOVIC, S; BURGHARTZ, J et al.Bipolar/BiCMOS Circuits and Technology Meetings. 2004, pp 140-143, isbn 0-7803-8618-3, 1Vol, 4 p.Conference Paper

Etching behavior of titanium Silicide films in HF-based solutionDATTA, A; UMAPATHI, B; BASU, S et al.SPIE proceedings series. 1998, pp 1165-1168, isbn 0-8194-2756-X, 2VolConference Paper

Evaluation of sheet resistance and electrical linewidth measurement techniques for copper damascene interconnectSMITH, Stewart; WALTON, Anthony J; ROSS, Alan W. S et al.IEEE transactions on semiconductor manufacturing. 2002, Vol 15, Num 2, pp 214-222, issn 0894-6507Conference Paper

Interactions between ruthenia-based resistors and cordierite-glass substrates in low-temperature Co-fired ceramicsTING, Ching-Jui; HSI, Chi-Shiung; LU, Hong-Yang et al.Journal of the American Ceramic Society. 2000, Vol 83, Num 12, pp 2945-2953, issn 0002-7820Article

Differential silicide thickness for ULSI scalingTAYLOR, William J; SMITH, James; NGUYEN, Jen-Yee et al.Proceedings - Electrochemical Society. 2003, pp 278-287, issn 0161-6374, isbn 1-56677-376-8, 10 p.Conference Paper

Investigation of plasma-induced damage of nickel mono-silicide in semiconductor manufacturingHSU, P. F; TSAI, M. H; PEMG, B. C et al.International Symposium on the Physical & Failure Analysis of Integrated Circuits. 2004, pp 199-200, isbn 0-7803-8454-7, 1Vol, 2 p.Conference Paper

Effect of sheet resistivity on the performance of terrestrial silicon solar cellsCHAKRAVARTY, B. C; SINGH, S. N; LAL, M et al.SPIE proceedings series. 1998, pp 428-431, isbn 0-8194-2756-X, 2VolConference Paper

Simple micro-patterning of high conductive polymer with UV-nano-imprinted patterned substrate and ethylene glycol-based second dopingTAKAMATSU, Seiichi; KURIHARA, Kazuma; YAMASHITA, Takahiro et al.Journal of micromechanics and microengineering (Print). 2014, Vol 24, Num 4, issn 0960-1317, 045024.1-045024.7Article

Systematic study of shallow junction formation on germanium substratesHELLINGS, Geert; ROSSEEL, Erik; DE MEYER, Kristin et al.Microelectronic engineering. 2011, Vol 88, Num 4, pp 347-350, issn 0167-9317, 4 p.Conference Paper

Development of a new design simulator for poly-Si TFTs to optimize the lightly doped drain structureNANNO, Yutaka; SENDA, Kohji; TSUTSU, Hiroshi et al.Journal of the Society for Information Display. 2002, Vol 10, Num 1, pp 101-106, issn 1071-0922Conference Paper

Thermoconductimétrie du solide = Solid thermal conductometryKARMAZSIN, Etienne.Techniques de l'ingénieur. Analyse et caractérisation. 2001, Vol P2, Num P1300, pp p1300.1-p1300.22, issn 1762-8717Article

Overcoming sheet resistance effects to enable electroplating of copper onto seedless barrier filmsTAKAHASHI, K. M.IEEE 1999 international interconnect technology conference. 1999, pp 281-283, isbn 0-7803-5174-6Conference Paper

Growth of Ni-B films on n-siliconMONDAL, Anup; NATH, Sabyashachi; MONDAL, Ashok et al.Physica status solidi. A. Applied research. 2005, Vol 202, Num 9, pp 1786-1792, issn 0031-8965, 7 p.Article

SC1 cleaning effect on electrical characteristics of 256 Mbit mobile DRAM with dual gate oxideLEE, Chihoon; JO, Namhyuk; HWANG, Chanseong et al.Journal of the Electrochemical Society. 2004, Vol 151, Num 10, pp G683-G687, issn 0013-4651Article

Pattern effects during spike annealing of ultra-shallow implantsNIESS, J; NENYEI, Z; LERCH, W et al.Proceedings - Electrochemical Society. 2003, pp 11-16, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper

Time evolution of boron-doped polycrystalline silicon gate resistanceTASHIRO, H; SUZUKI, K; AOYAMA, T et al.Journal of the Electrochemical Society. 1999, Vol 146, Num 2, pp 755-757, issn 0013-4651Article

Performance enhancements for 50 nm PMOS by angled pre-amorphization implants and fluorine implantsCHIDAMBARAM, P. R; EKBOTE, S; CHAKRAVARTHI, S et al.Proceedings - Electrochemical Society. 2003, pp 93-98, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper

Study on Ge/Si ratio and formation of Ni/P+Si1-xGexand Ni/Si/P+Si1-xGexYANG, Tsung-Hsi; YI CHANG, Edward; GUANGLI LUO et al.Proceedings - Electrochemical Society. 2003, pp 183-190, issn 0161-6374, isbn 1-56677-396-2, 8 p.Conference Paper

Modeling of ultrahighly doped shallow junctions for aggressively scaled CMOSKENNEL, H. W; CEA, S. M; LILAK, A. D et al.IEDm : international electron devices meeting. 2002, pp 875-878, isbn 0-7803-7462-2, 4 p.Conference Paper

Fluorine effects on silicidation of BF2+-Implanted narrow poly linesYAP, C. W; SIAH, S.-Y; LIM, E. H et al.IEEE 1999 international interconnect technology conference. 1999, pp 38-40, isbn 0-7803-5174-6Conference Paper

Silicide scaling: Co, Ni or CoNi?LAUWERS, A; KITTL, J. A; AKHEYAR, A et al.Proceedings - Electrochemical Society. 2003, pp 167-176, issn 0161-6374, isbn 1-56677-396-2, 10 p.Conference Paper

Use of TixTiN as cap layer for the formation of cobalt silicideVULPIO, M; FAZIO, D; BILECI, M et al.Proceedings - Electrochemical Society. 2003, pp 167-173, issn 0161-6374, isbn 1-56677-390-3, 7 p.Conference Paper

Crystallization and memory programming characteristics of Ge-doped SbTe materials of varying Sb: Te ratioJEONG, Jeung-Hyun; HYUN SEOK LEE; LEE, Suyoun et al.Journal of physics. D, Applied physics (Print). 2009, Vol 42, Num 3, issn 0022-3727, 035104.1-035104.6Article

Silver thick film pastes for low temperature co-fired ceramics : impact of glass frit variationBANGALI, Jayashri; RANE, Sunit; PHATAK, Girish et al.Soldering & surface mount technology. 2008, Vol 20, Num 3, pp 41-46, issn 0954-0911, 6 p.Article

Silicides for the 100-nm node and beyond: Co-silicide, Co(Ni)-silicide and Ni-silicideLAUWERS, A; DE POTTER, M; CHAMIRIAN, O et al.Microelectronic engineering. 2002, Vol 64, Num 1-4, pp 131-142, issn 0167-9317Conference Paper

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