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kw.\*:("Retrodifusión Rutherford")

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Effects due to Popocatepetl volcano eruptions on the elemental concentrations in tree growth ringstCRUZ-MUNOZ, A. R; RODRIGUEZ-FERNANDEZ, L; CALVA-VAZQUEZ, G et al.X-ray spectrometry. 2008, Vol 37, Num 2, pp 163-168, issn 0049-8246, 6 p.Conference Paper

Mutual diffusion studies of polystyrene and poly(xylenyl ether) using Rutherford backscattering spectrometryCOMPOSTO, R. J; KRAMER, E. J.Journal of materials science. 1991, Vol 26, Num 10, pp 2815-2822, issn 0022-2461, 8 p.Article

Feasibility of fast-particle channeling in quasicrystalsKUPKE, T; PESCHKE, U; CARSTANJEN, H.-D et al.Physical review. B, Condensed matter. 1991, Vol 43, Num 16B, pp 13758-13761, issn 0163-1829Article

Ion-beam-induced amorphization/crystallization during buried oxide layer formationRIDGWAY, M. C; LOCCISANO, R; WILLIAMS, J. S et al.Materials letters (General ed.). 1990, Vol 10, Num 4-5, pp 156-160, issn 0167-577XArticle

Range profiles of 50 to 400 keV xenon ions in a silicate glassWANG KE-MING; SHI BO-RONG; GUO HAI-YAN et al.Journal of physics. D, Applied physics (Print). 1990, Vol 23, Num 7, pp 867-869, issn 0022-3727Article

Certain features of high-dose and intensive implantation of aluminium ions in ironPOGREBNJAK, A. D; SHABLIA, V. T; POGREBNJAK, N. A et al.Surface & coatings technology. 1998, Vol 110, Num 1-2, pp 35-39, issn 0257-8972Article

Amorphization processes in self-ion-implanted Si : dose dependenceMOTOOKA, T; HOLLAND, O. W.Applied physics letters. 1991, Vol 58, Num 21, pp 2360-2362, issn 0003-6951Article

Microbeam line of MeV heavy ions for materials modifications and in-situ analysisHORINO, Y; CHAYAHARA, A; KIUCHI, M et al.Japanese journal of applied physics. 1990, Vol 29, Num 11, pp 2680-2683, issn 0021-4922, 1Article

Silicon oxide deposition from tetraethoxysilane in a radio frequency downstream reactor : mechanisms and step coverageSELAMOGLU, N; MUCHA, J. A; IBBOTSON, D. E et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1989, Vol 7, Num 6, pp 1345-1351, issn 0734-211XArticle

Oxidation of Si and TiSi2 thin films in rf oxygen plasmaPEREZ-CASERO, R; PERRIERE, J; ENARD, J. P et al.Journal of applied physics. 1991, Vol 69, Num 3, pp 1407-1410, issn 0021-8979Article

Monte-Carlo simulation of the backscattering effects of loop dislocations in a silicon crystalMAZZONE, A. M.Physica status solidi. A. Applied research. 1990, Vol 120, Num 2, pp 379-385, issn 0031-8965Article

Influence of beam current ripple on secondary electron and RBS mapping imagesAGAWA, Y; TAKAI, M; ISHIBASHI, K et al.Japanese journal of applied physics. 1990, Vol 29, Num 6, pp L1011-L1014, issn 0021-4922, 2Article

Damage and deuterium retention in LiAlO2 single crystals irradiated with deuterium ions using ion-beam techniques and optical absorption measurementsKATSUI, H; NAGATA, S; TSUCHIYA, B et al.Journal of nuclear materials. 2011, Vol 417, Num 1-3, pp 753-755, issn 0022-3115, 3 p.Conference Paper

Non-destructive depth profiling of silicon ion implantation induced damage in silicon (100) substratesLYNCH, S; MURTAGH, M; CREAN, G. M et al.Thin solid films. 1993, Vol 233, Num 1-2, pp 199-202, issn 0040-6090Conference Paper

Heavy-ion rutherford backscattering spectrometry. A comparison of 11B with 4He ionsIWASAWA, K; SATO, G; SAITO, M et al.Memoirs of the Faculty of Engineering, Kyoto University. 1990, Vol 52, Num 4, pp 297-310, issn 0023-6063Article

Rutherford backscattering applied to oxide film analysis = Rétrodiffusion de Rutherford appliquée à l'analyse des films d'oxydeBARROS LEITE, C. V; BAPTISTA, G. B; PATNAIK, B. K et al.Journal of trace and microprobe techniques. 1986, Vol 4, Num 1-2, pp 37-56, issn 0733-4680Article

Nuclear microprobe application in semiconductor process developmentsTAKAI, M.Scanning microscopy. 1992, Vol 6, Num 1, pp 147-156, issn 0891-7035Article

A Pascal program for the least-squares evaluation of standard RBS spectraHNATOWICZ, V; HAVRANEK, V; KVITEK, J et al.Computer physics communications. 1992, Vol 72, Num 2-3, pp 295-303, issn 0010-4655Article

Plasma anodization of silicon nitridePARKHUTIK, V. P; MAKUSHOK, YU. E; BORISOV, S. YU et al.Physica status solidi. A. Applied research. 1990, Vol 121, Num 2, pp K181-K183, issn 0031-8965Article

Refined RBS and AES techniques for the analysis of thin films used in photovoltaic devicesBOHNE, W; FENSKE, F; KELLING, S et al.Physica status solidi. B. Basic research. 1996, Vol 194, Num 1, pp 69-78, issn 0370-1972Article

RBS analysis of phosphorus-gettering of gold and copper in siliconHARTITI, B; AMZIL, H; SAYEH, D et al.Annales de chimie (Paris. 1914). 1994, Vol 19, Num 7-8, pp 483-486, issn 0151-9107Conference Paper

Rutherford backscattering studies on high-energy Si-implanted InPGULWADI, S. M; NADELLA, R. K; HOLLAND, O. W et al.Journal of electronic materials. 1991, Vol 20, Num 8, pp 615-619, issn 0361-5235Article

Lattice parameters and local atomic structure of silicon-rich Si-Ge/Si (100) filmsMATSUURA, M; TONNERRE, J. M; CARGILL, G. S et al.Physical review. B, Condensed matter. 1991, Vol 44, Num 8, pp 3842-3849, issn 0163-1829Article

Search for superheavy nuclearites in meteorites by Rutherford backscatteringLIU SHIJIE; XIE BAOZHEN; WU YUE et al.Chinese physics. 1990, Vol 10, Num 1, pp 111-113, issn 0273-429XArticle

Rutherford backscattering spectroscopy analysis of Ar+ implanted ytrria stabilized zirconiaDUH, J. G; WU, Y. S; CHIOU, B. S et al.Journal of materials science letters. 1990, Vol 9, Num 8, pp 916-918, issn 0261-8028, 3 p.Article

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