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VANADIUM OXIDE MONOLAYER CATALYSTS. II: A LASER RAMAN SPECTROSCOPIC STUDY OF OXIDIC VANADIUM/GAMMA -ALUMINA CATALYSTS (1)ROOZEBOOM F; MEDEMA J; GELLINGS PJ et al.1978; Z. PHYS. CHEM., NEUE FOLGE, WIESBADEN; DEU; DA. 1978; VOL. 111; NO 2; PP. 215-224; ABS. GER; BIBL. 37 REF.Article

VANADIUM OXIDE MONOLAYER CATALYSTS. THE VAPOR-PHASE OXIDATION OF METHANOLROOZEBOOM F; CORDINGLEY PD; GELLINGS PJ et al.1981; J. CATAL.; ISSN 0021-9517; USA; DA. 1981; VOL. 68; NO 2; PP. 464-472; BIBL. 35 REF.Article

Rapid thermal processing systems : a review with emphasis on temperature controlROOZEBOOM, F; PAREKH, N.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1990, Vol 8, Num 6, pp 1249-1259, issn 0734-211XArticle

VANADIUM OXIDE MONOLAYER CATALYSTS. IV: THE CATALYTIC OXIDATION OF CARBON MONOXIDEROOZEBOOM F; VAN DILLEN AJ; GEUS JW et al.1981; IND. ENG. CHEM., PROD. RES. DEV.; ISSN 0019-7890; USA; DA. 1981; VOL. 20; NO 2; PP. 304-309; BIBL. 20 REF.Article

VANADIUM OXIDE MONOLAYER CATALYSTS. I: PREPARATION, CHARACTERIZATION AND THERMAL STABILITYROOZEBOOM F; FRANSEN T; MARS P et al.1979; Z. ANORG. ALLG. CHEM.; DDR; DA. 1979; VOL. 449; PP. 25-40; ABS. GER; BIBL. 40 REF.Article

VANADIUM OXIDE MONOLAYER CATALYSTS. III: A RAMAN SPECTROSCOPIC AND TEMPERATURE-PROGRAMMED REDUCTION STUDY OF MONOLAYER AND CRYSTAL-TYPE VANADIA ON VARIOUS SUPPORTSROOZEBOOM F; MITTELMELJER HAZELEGER MC; MOULIJN JA et al.1980; J. PHYS. CHEM.; ISSN 0022-3654; USA; DA. 1980; VOL. 84; NO 21; PP. 2783-2791; BIBL. 37 REF.Article

MIM in 3D: Dream or reality? (invited)KLOOTWIJK, J. H; JINESH, K. B; ROOZEBOOM, F et al.Microelectronic engineering. 2011, Vol 88, Num 7, pp 1507-1513, issn 0167-9317, 7 p.Conference Paper

Laser Raman study on the crystallization of zeolites A,X and YROOZEBOOM, F; ROBSON, H. E; CHAN, S. S et al.Zeolites. 1983, Vol 3, Num 4, pp 321-328, issn 0144-2449Article

Nickel-zinc ferrite films by rapid thermal processing of sol-gel precursorsVAN DE LEEST, R. E; ROOZEBOOM, F.Applied surface science. 2002, Vol 187, Num 1-2, pp 68-74, issn 0169-4332Article

Multiple quantum well structures and high-power lasers of GaAs-AlGaAs grown by metalorganic vapor phase epitaxy (MOVPE)ROOZEBOOM, F; SIKKEMA, A; MOLENKAMP, L. W et al.Fiber and integrated optics. 1987, Vol 6, Num 4, pp 331-345, issn 0146-8030Article

Device and substrate design for sub-10 nm MOSFETsIEONG, Meikei; DORIS, Bruce; KEDZIERSKI, Jakub et al.Proceedings - Electrochemical Society. 2004, pp 371-382, issn 0161-6374, isbn 1-56677-406-3, 12 p.Conference Paper

Optimization of pre-amorphization and dopant implant conditions for advanced annealingFELCH, S. B; GRAOUI, H; MAYUR, A et al.Proceedings - Electrochemical Society. 2004, pp 31-38, issn 0161-6374, isbn 1-56677-406-3, 8 p.Conference Paper

Laser anneal technology for poly-silicon dopant activation enhancementMA, Y; AHMED, K. Z; MUTHUKRISHNAN, S et al.Proceedings - Electrochemical Society. 2004, pp 230-235, issn 0161-6374, isbn 1-56677-406-3, 6 p.Conference Paper

Fully silicided metal gates for high performance CMOs technologyMASZARA, W. P.Proceedings - Electrochemical Society. 2004, pp 341-353, issn 0161-6374, isbn 1-56677-406-3, 13 p.Conference Paper

Radiative properties of silicon considering surface imperfections and chamber effectsZHANG, Z. M; LEE, H. J.Proceedings - Electrochemical Society. 2004, pp 19-30, issn 0161-6374, isbn 1-56677-406-3, 12 p.Conference Paper

Significant improvement in device performance of advanced dynamic random access memory by hot wall-based single wafer rapid thermal annealingSETOKUBO, Tsuyoshi; NAKANO, Eiji; AIZAWA, Kazuo et al.Proceedings - Electrochemical Society. 2004, pp 135-144, issn 0161-6374, isbn 1-56677-406-3, 10 p.Conference Paper

Solid phase epitaxy: Activation and deactivation of boron in ultra-shallow junctionsLERCH, W; PAUL, S; NIESS, J et al.Proceedings - Electrochemical Society. 2004, pp 90-105, issn 0161-6374, isbn 1-56677-406-3, 16 p.Conference Paper

Sub-30 NM abrupt junction formation in strained silicon/silicon-germanium CMOs deviceLEE, K. L; CARDONE, F; SAUNDERS, P et al.Proceedings - Electrochemical Society. 2004, pp 71-81, issn 0161-6374, isbn 1-56677-406-3, 11 p.Conference Paper

Growth of nickel silicide quantum dot arrays on epitaxial SI0.7GE0.3 on (001) silicon with a sacrificial amorphous silicon interlayerCHEN, L. J; WU, W. W; CHENG, S. L et al.Proceedings - Electrochemical Society. 2003, pp 325-330, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper

Poly-Si gate CMOS with hafnium silicate gate dielectricHOBBS, Christopher; GRANT, John; FRANKE, Andrea et al.Proceedings - Electrochemical Society. 2003, pp 361-366, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper

Intra-die temperature non uniformity related to front side emissivity dependence during rapid thermal annealingLAVIRON, C; LINDSAY, R; MICHALLET, A et al.Proceedings - Electrochemical Society. 2003, pp 3-9, issn 0161-6374, isbn 1-56677-396-2, 7 p.Conference Paper

Pattern effects during spike annealing of ultra-shallow implantsNIESS, J; NENYEI, Z; LERCH, W et al.Proceedings - Electrochemical Society. 2003, pp 11-16, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper

High resolution investigation of atomic interdiffusion during CO/NI/SI phase transitionALBERTI, Alessandra; CAFRA, Brunella; BONGIORNO, Corrado et al.Proceedings - Electrochemical Society. 2003, pp 161-166, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper

Selective oxidation of tungsten-gate stacks in high-volume DRAM productionROTERS, Georg; HAYN, Regina; KEGEL, Wilhelm et al.Proceedings - Electrochemical Society. 2003, pp 385-390, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper

Sidewall grooving on COSI2 narrow linesCHAMIRIAN, O; DE POTTER, M; LAUWERS, A et al.Proceedings - Electrochemical Society. 2003, pp 155-160, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper

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