au.\*:("Roozeboom, F")
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VANADIUM OXIDE MONOLAYER CATALYSTS. II: A LASER RAMAN SPECTROSCOPIC STUDY OF OXIDIC VANADIUM/GAMMA -ALUMINA CATALYSTS (1)ROOZEBOOM F; MEDEMA J; GELLINGS PJ et al.1978; Z. PHYS. CHEM., NEUE FOLGE, WIESBADEN; DEU; DA. 1978; VOL. 111; NO 2; PP. 215-224; ABS. GER; BIBL. 37 REF.Article
Rapid thermal processing systems : a review with emphasis on temperature controlROOZEBOOM, F; PAREKH, N.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1990, Vol 8, Num 6, pp 1249-1259, issn 0734-211XArticle
VANADIUM OXIDE MONOLAYER CATALYSTS. IV: THE CATALYTIC OXIDATION OF CARBON MONOXIDEROOZEBOOM F; VAN DILLEN AJ; GEUS JW et al.1981; IND. ENG. CHEM., PROD. RES. DEV.; ISSN 0019-7890; USA; DA. 1981; VOL. 20; NO 2; PP. 304-309; BIBL. 20 REF.Article
MIM in 3D: Dream or reality? (invited)KLOOTWIJK, J. H; JINESH, K. B; ROOZEBOOM, F et al.Microelectronic engineering. 2011, Vol 88, Num 7, pp 1507-1513, issn 0167-9317, 7 p.Conference Paper
Laser Raman study on the crystallization of zeolites A,X and YROOZEBOOM, F; ROBSON, H. E; CHAN, S. S et al.Zeolites. 1983, Vol 3, Num 4, pp 321-328, issn 0144-2449Article
Nickel-zinc ferrite films by rapid thermal processing of sol-gel precursorsVAN DE LEEST, R. E; ROOZEBOOM, F.Applied surface science. 2002, Vol 187, Num 1-2, pp 68-74, issn 0169-4332Article
Advanced short-time thermal processing for Si-based CMOS devices II (San Antonio TX, 10-12 May 2004)Öztürk, M.C; Chen, L.J; Timans, P.J et al.Proceedings - Electrochemical Society. 2004, issn 0161-6374, isbn 1-56677-406-3, XII, 428 p, isbn 1-56677-406-3Conference Proceedings
Enhancement of manufacturibility in polycrystalline silicon process by using disilane precursor at 65nm CMOS technologyYUANNING CHEN; HAOWEN BU; CUNNINGHAM, Kevin L et al.Proceedings - Electrochemical Society. 2004, pp 244-251, issn 0161-6374, isbn 1-56677-406-3, 8 p.Conference Paper
Gate-source/drain extension overlap control with angled implants: TCAD modeling studyTHIRUPAPULIYUR, Sunderraj; AL-BAYATI, Amir; JAIN, Amitabh et al.Proceedings - Electrochemical Society. 2004, pp 127-134, issn 0161-6374, isbn 1-56677-406-3, 8 p.Conference Paper
Formation and characterization of nickel silicided shallow N+P junctions using implantation through silicide and low temperature furnace annealingWANG, Chao-Chun; CHEN, Mao-Chieh.Proceedings - Electrochemical Society. 2004, pp 183-190, issn 0161-6374, isbn 1-56677-406-3, 8 p.Conference Paper
The effect of ramp rate: Short process time and partial reactions on cobalt and nickel silicide formationPAGES, X; VAN DER JEUGD, K; KUZNETSOV, V et al.Proceedings - Electrochemical Society. 2004, pp 174-182, issn 0161-6374, isbn 1-56677-406-3, 9 p.Conference Paper
First principles modelling of the deposition process for high-K dielectric filmsELLIOTT, Simon D.Proceedings - Electrochemical Society. 2003, pp 231-242, issn 0161-6374, isbn 1-56677-396-2, 12 p.Conference Paper
New metal gate architecture achieved by chemical vapor deposition for a complete tunnel fillREGNIER, C; WACQUANT, F; LEVERD, F et al.Proceedings - Electrochemical Society. 2003, pp 391-396, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper
Performance of nitrided Hf-silicate high-K gate dielectricsJEON, Joong; QI XIANG; ARASNIA, Farzad et al.Proceedings - Electrochemical Society. 2003, pp 451-457, issn 0161-6374, isbn 1-56677-396-2, 7 p.Conference Paper
Application of high-K dielectrics in CMOS technology and emerging new technologyLIU, Rich; WU, Tai-Bor.Proceedings - Electrochemical Society. 2003, pp 207-216, issn 0161-6374, isbn 1-56677-396-2, 10 p.Conference Paper
Effect of thermal annealing on MIST-deposited HFSIO4/SIOX/SI structuresCHANG, K; LEE, D.-O; SHANMUGASUNDARAM, K et al.Proceedings - Electrochemical Society. 2003, pp 429-435, issn 0161-6374, isbn 1-56677-396-2, 7 p.Conference Paper
Effect of starting surface in atomic layer depositionHAUKKA, Suvi; TUOMINEN, Marko; VAINONEN-AHLGREN, Elizaveta et al.Proceedings - Electrochemical Society. 2003, pp 405-416, issn 0161-6374, isbn 1-56677-396-2, 12 p.Conference Paper
Atomic layer deposition of high-K metal oxides for gate and capacitor dielectricsSENZAKI, Yoshihide; PARK, S. G; HIGUCHI, Randall et al.Proceedings - Electrochemical Society. 2003, pp 423-428, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper
Batch atomic layer deposition for MIM capacitorsDE BLANK, René; JAN SNIJDERS, Gert; BEULENS, Sjaak et al.Proceedings - Electrochemical Society. 2003, pp 225-229, issn 0161-6374, isbn 1-56677-396-2, 5 p.Conference Paper
Rapid thermal annealing of atomic layer deposited hafnium-silicate / poly-silicon layersRITTERSMA, Z. M; MASSOUBRE, D; TUOMINEN, M et al.Proceedings - Electrochemical Society. 2003, pp 273-280, issn 0161-6374, isbn 1-56677-396-2, 8 p.Conference Paper
Rapid thermal solid phase epitaxy annealing for ultra-shallow junction formationLERCH, W; PAUL, S; DOWNEY, D. F et al.Proceedings - Electrochemical Society. 2003, pp 43-49, issn 0161-6374, isbn 1-56677-396-2, 7 p.Conference Paper
Silicon damage and dopant behavior studies of rapidly thermally processed arsenic-implanted siliconGIRGINOUDI, D; GEORGOULAS, N; THANAILAKIS, A et al.Proceedings - Electrochemical Society. 2003, pp 397-402, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper
Ultra-shallow implant anneal using a short wavelength flash light sourceWOO SIK YOO; KITAEK KANG.Proceedings - Electrochemical Society. 2003, pp 111-116, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper
Defect behavior and control in advanced CMOs process technologiesCLAEYS, C; SIMOEN, E.Proceedings - Electrochemical Society. 2004, pp 50-65, issn 0161-6374, isbn 1-56677-406-3, 16 p.Conference Paper
Electrical characterization of HfOxNy gate dielectric with different nitrogen concentration profiles formed by rapid thermal annealingCHENG, Chin-Lung; CHANG-LIAO, Kuei-Shu; WANG, Tien-Ko et al.Proceedings - Electrochemical Society. 2004, pp 286-291, issn 0161-6374, isbn 1-56677-406-3, 6 p.Conference Paper
