Rutherford backscattering applied to oxide film analysis = Rétrodiffusion de Rutherford appliquée à l'analyse des films d'oxydeBARROS LEITE, C. V; BAPTISTA, G. B; PATNAIK, B. K et al.Journal of trace and microprobe techniques. 1986, Vol 4, Num 1-2, pp 37-56, issn 0733-4680Article

Development of the microstructure of sputter deposited gold on amorphous carbonMUZARD, S; TEMPLIER, C; DELAFOND, J et al.Surface & coatings technology. 1998, Vol 100-01, Num 1-3, pp 98-102, issn 0257-8972Conference Paper

Amorphization by solid-state reaction of a Ni single crystal and Zr = Amorphisation par réaction à l'état solide d'un monocristal de Ni et de ZrPAMPUS, K; SAMWER, K; BØTTIGER, J et al.Europhysics letters (Print). 1987, Vol 3, Num 5, pp 581-585, issn 0295-5075Article

ION BEAM CRYSTALLOGRAPHY OF THE NI(110)-(2X1)O SURFACESMEENK RG; TROMP RM; SARIS FW et al.1981; SURF. SCI.; NLD; DA. 1981-06; VOL. 107; NO 2/3; PP. 429-438; BIBL. 15 REF.Article

Thermally activated redox-processes in V₂O_5-x under high oxygen partial pressures investigated by means of impedance spectroscopy and Rutherford backscatteringHARTH, Manuel; MITDANK, Rüdiger; HABEL, Daniela et al.International journal of materials research. 2013, Vol 104, Num 7, pp 657-665, issn 1862-5282, 9 p.Article

Diffusion study of implanted iodine in zirconium using ion beamsMONCOFFRE, N; CARLOT, G; CHEVARIER, A et al.Surface & coatings technology. 2000, Vol 128-29, pp 9-14, issn 0257-8972Conference Paper

Mixing of ta-fe and mo-fe systems using a low-energy, high-current electron beamPOGREBNJAK, A. D; BAKHAREV, O. G; SUSHKO, V. V et al.Surface & coatings technology. 1998, Vol 99, Num 1-2, pp 98-110, issn 0257-8972Article

Ion implantation induced formation of aluminum nanoparticles in alumina via reductionHUNT, E. M; HAMPIKIAN, J. M; POKER, D. B et al.Surface & coatings technology. 1998, Vol 103-04, pp 409-414, issn 0257-8972Conference Paper

Enhancement of diffusion-induced grain boundary migration by ion irradiationALEXANDER, D. E; REHN, L. E; BALDO, P. M et al.Applied physics letters. 1993, Vol 62, Num 14, pp 1597-1599, issn 0003-6951Article

The dominant diffusing species and initial phase formation in Al-Cu, Mg-Cu, and Mg-Ni systemsHONG, Q. Z; D'HEURIE, F. M.Journal of applied physics. 1992, Vol 72, Num 9, pp 4036-4040, issn 0021-8979Article

MeV multiple implantation of nitrogen ions to pure chromium. II: Effects of heat treatment on the depth profile of nitrogen concentrationNISHIYAMA, F; YOSHIDA, S; SAKAMOTO, H et al.Hyomen gijutsu. 1992, Vol 43, Num 12, pp 1216-1222, issn 0915-1869Article

Structural study of tin and carbon coimplanted siliconMEI, P; SCHMIDT, M. T; YANG, E. S et al.Journal of applied physics. 1991, Vol 69, Num 12, pp 8417-8419, issn 0021-8979Article

Barrier metal between tungsten and silicon for high temperature processing = Barrière métallique entre le tungstène et le silicium pour les traitements à haute températureSUGURO, K; NAKASAKI, Y; YOSHII, T et al.Applied surface science. 1989, Vol 41-42, Num 1-4, pp 277-281, issn 0169-4332Conference Paper

Beam-energy conditions for efficient ion-beam mixing = Conditions d'énergie de faisceau pour le mélange par faisceaux d'ions efficaceCHERIAN, S; REID, I; GECIM, H. S et al.Canadian journal of physics (Print). 1987, Vol 65, Num 2, pp 129-133, issn 0008-4204Article

Sputtering of Ag film on glass by 120 keV noble gas ions = Pulvérisation de couche mince de Ag sur du verre par des ions de gaz rares de 120 keVWANG KE-MING.Radiation effects express section. 1987, Vol 1, Num 1, pp 47-53Article

Surface modification of aluminium by plasma immersion ion implantationMANOVA, D; HUBER, P; MÄNDL, S et al.Surface & coatings technology. 2000, Vol 128-29, pp 249-255, issn 0257-8972Conference Paper

Gallium enrichment and film detachment during anodizing of an Al-Ga alloyMARGADANT, N; SKELDON, P; TEXTOR, M et al.Corrosion science. 2000, Vol 42, Num 3, pp 405-419, issn 0010-938XArticle

Sn diffusion in nanocrystalline stainless steel under C regimeBALANDIN, I. L; BOKSTEIN, B. S; EGOROV, V. K et al.Materials letters (General ed.). 1997, Vol 32, Num 1, pp 13-15, issn 0167-577XArticle

Correlation between X-ray reflectivity and Rutherford backscattering spectroscopy for density measurement of thin filmsNAKAJIMA, K; AOKI, S; SUDO, S et al.Japanese journal of applied physics. 1993, Vol 32, Num 1A, pp 164-165, issn 0021-4922, 1Article

Sputtering behaviour of stainless steel during Pt ion implantationCLAPHAM, L; WHITTON, J. L; RIDGWAY, M. C et al.Materials letters (General ed.). 1993, Vol 16, Num 2-3, pp 139-141, issn 0167-577XArticle

An area ratio method for RBS compositional analysis of thin filmsKUSAO, K; SATOH, M; MORITA, K et al.Surface and interface analysis. 1992, Vol 18, Num 6, pp 417-420, issn 0142-2421Conference Paper

Mean projected ranges of 50 to 400 keV Br+ in A1 = Domaines projetés moyens de Br⁺ implanté entre 50 et 400 keV DANS A1WANG KE-MING; WANG YI-HUA; LIU JI-TIAN et al.Radiation effects. 1988, Vol 1, Num 5, pp 227-232, issn 0033-7579Article

Propriétés des défauts résultant de l'action d'un laser à impulsions sur GaPBURDEL, K. K; DITRIKH, T; CHECHENIN, N. G et al.Fizika i himiâ obrabotki materialov. 1987, Num 2, pp 25-27, issn 0015-3214Article

Co/GaAs interfacial reactions = Réactions interfaciales Co/GaAsPALMSTRØM, C. J; CHANG, C. C; YU, A et al.Journal of applied physics. 1987, Vol 62, Num 9, pp 3755-3762, issn 0021-8979Article

Rutherford backscattering investigations of melting and premelting phenomena at surfaces = Etudes par rétrodiffusion de Rutherford des phénomènes de fusion et de préfusion aux surfacesPLUIS, B; FRENKEN, J. W. M; VAN DER VEEN, J. F et al.Physica scripta. T. 1987, Vol 19B, pp 382-386, issn 0281-1847Conference Paper