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Effects due to Popocatepetl volcano eruptions on the elemental concentrations in tree growth ringstCRUZ-MUNOZ, A. R; RODRIGUEZ-FERNANDEZ, L; CALVA-VAZQUEZ, G et al.X-ray spectrometry. 2008, Vol 37, Num 2, pp 163-168, issn 0049-8246, 6 p.Conference Paper

Shell effects in low-energy heavy-ion rangesGUPTA, S. K; BHATTACHARYA, P. K.Physical review. B, Condensed matter. 1984, Vol 29, Num 5, pp 2449-2457, issn 0163-1829Article

Surface structural damage produced in InP (100) by R.F. plasma or sputter depositionDAUTREMONT-SMITH, W. C; FELDMAN, L. C.Thin solid films. 1983, Vol 105, Num 2, pp 187-196, issn 0040-6090Article

Thermally activated redox-processes in V2O5-x under high oxygen partial pressures investigated by means of impedance spectroscopy and Rutherford backscatteringHARTH, Manuel; MITDANK, Rüdiger; HABEL, Daniela et al.International journal of materials research. 2013, Vol 104, Num 7, pp 657-665, issn 1862-5282, 9 p.Article

Sorption mechanism of europium by apatite using Rutherford backscattering spectroscopy and resonant nuclear reaction analysisOHNUKI, T; KOZAI, N; ISOBE, H et al.Journal of Nuclear Science and Technology. 1997, Vol 34, Num 1, pp 58-62, issn 0022-3131Article

OXIDATION OF TITANIUM DISILICIDE ON POLYCRYSTALLINE SILICONJIANN RUEY CHEN; YUEN CHUNG LIU; SHENG DEH CHU et al.1982; JOURNAL OF ELECTRONIC MATERIALS; ISSN 0361-5235; USA; DA. 1982; VOL. 11; NO 2; PP. 355-389; BIBL. 32 REF.Article

OXIDATION OF SILICIDE THIN FILMS: TISI2D'HEURLE F; IRENE EA; TING CY et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 4; PP. 361-363; BIBL. 15 REF.Article

Mutual diffusion studies of polystyrene and poly(xylenyl ether) using Rutherford backscattering spectrometryCOMPOSTO, R. J; KRAMER, E. J.Journal of materials science. 1991, Vol 26, Num 10, pp 2815-2822, issn 0022-2461, 8 p.Article

Feasibility of fast-particle channeling in quasicrystalsKUPKE, T; PESCHKE, U; CARSTANJEN, H.-D et al.Physical review. B, Condensed matter. 1991, Vol 43, Num 16B, pp 13758-13761, issn 0163-1829Article

Ion-beam-induced amorphization/crystallization during buried oxide layer formationRIDGWAY, M. C; LOCCISANO, R; WILLIAMS, J. S et al.Materials letters (General ed.). 1990, Vol 10, Num 4-5, pp 156-160, issn 0167-577XArticle

Range profiles of 50 to 400 keV xenon ions in a silicate glassWANG KE-MING; SHI BO-RONG; GUO HAI-YAN et al.Journal of physics. D, Applied physics (Print). 1990, Vol 23, Num 7, pp 867-869, issn 0022-3727Article

Depth profile of silver in a matrix of silicon dioxide by Rutherford backscattering spectrometryLEAVITT, J. A; ROLLINS, D. K; FERNANDO, Q et al.Analytical chemistry (Washington, DC). 1986, Vol 58, Num 1, pp 90-93, issn 0003-2700Article

Oxidation of iron in air between 523 and 673 K = Oxydation du fer dans l'air entre 523 et 673 KSAKAI, H; TSUJI, T; NAITO, K et al.Journal of Nuclear Science and Technology. 1985, Vol 22, Num 2, pp 158-161, issn 0022-3131Article

High accuracy data from Rutherford back-scattering spectra: measurements of the range and straggling of 60-400 keV as implants into SiJEYNES, C; KIMBER, A. C.Journal of physics. D, Applied physics (Print). 1985, Vol 18, Num 8, pp L93-L97, issn 0022-3727Article

Nuclear microprobe application in semiconductor process developmentsTAKAI, M.Scanning microscopy. 1992, Vol 6, Num 1, pp 147-156, issn 0891-7035Article

A Pascal program for the least-squares evaluation of standard RBS spectraHNATOWICZ, V; HAVRANEK, V; KVITEK, J et al.Computer physics communications. 1992, Vol 72, Num 2-3, pp 295-303, issn 0010-4655Article

Plasma anodization of silicon nitridePARKHUTIK, V. P; MAKUSHOK, YU. E; BORISOV, S. YU et al.Physica status solidi. A. Applied research. 1990, Vol 121, Num 2, pp K181-K183, issn 0031-8965Article

Dependence of laser-induced damage of surface layers of GaP on pulse width and wavelengthOKIGAWA, M; NAKAYAMA, T; MORITA, K et al.Applied physics letters. 1983, Vol 43, Num 11, pp 1054-1056, issn 0003-6951Article

Diffusion of iodine into PE and PETPENDER, L. F; MAK, H.-B; WINTLE, H. J et al.Journal of polymer science. Polymer physics edition. 1983, Vol 21, Num 9, pp 1635-1646, issn 0098-1273Article

Damage and deuterium retention in LiAlO2 single crystals irradiated with deuterium ions using ion-beam techniques and optical absorption measurementsKATSUI, H; NAGATA, S; TSUCHIYA, B et al.Journal of nuclear materials. 2011, Vol 417, Num 1-3, pp 753-755, issn 0022-3115, 3 p.Conference Paper

Characterization of iron oxide layers using Auger electron spectroscopyBIZJAK, Milan; ZALAR, Anton; PANJAN, Peter et al.Applied surface science. 2007, Vol 253, Num 8, pp 3977-3981, issn 0169-4332, 5 p.Article

Non-destructive depth profiling of silicon ion implantation induced damage in silicon (100) substratesLYNCH, S; MURTAGH, M; CREAN, G. M et al.Thin solid films. 1993, Vol 233, Num 1-2, pp 199-202, issn 0040-6090Conference Paper

Heavy-ion rutherford backscattering spectrometry. A comparison of 11B with 4He ionsIWASAWA, K; SATO, G; SAITO, M et al.Memoirs of the Faculty of Engineering, Kyoto University. 1990, Vol 52, Num 4, pp 297-310, issn 0023-6063Article

Rutherford backscattering applied to oxide film analysis = Rétrodiffusion de Rutherford appliquée à l'analyse des films d'oxydeBARROS LEITE, C. V; BAPTISTA, G. B; PATNAIK, B. K et al.Journal of trace and microprobe techniques. 1986, Vol 4, Num 1-2, pp 37-56, issn 0733-4680Article

Atomic geometry and dynamics of the GaSb(110) surfaceSMIT, L; TROMP, R. M; VAN DER VEEN, J. F et al.Physical review. B, Condensed matter. 1984, Vol 29, Num 8, pp 4814-4817, issn 0163-1829Article

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