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Results 1 to 25 of 67

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Medium-energy ion spectroscopy using ion implanterRADZIMSKI, Z. J; YOKOYAMA, S; ISHIBASHI, K et al.Japanese journal of applied physics. 1993, Vol 32, Num 7A, pp L962-L965, issn 0021-4922, 2Article

Mécanismes de croissance et propriétés électroniques des films anodiques formés sur le titane sous irradiation alpha = Growth mechanisms and electronics properties of anodics films formed on titanium under alpha-radiationSAKOUT, Touria; OUDAR, J.1993, 149 p.Thesis

The fingers of the physicsFOSCHINI, L.Annales de la Fondation Louis de Broglie. 2000, Vol 25, Num 1, pp 67-79, issn 0182-4295Article

Optimized Rutherford-scattering geometries for intense ion-beam diagnosticsSTYGAR, W. A; MIX, L. P; LEEPER, R. J et al.Review of scientific instruments. 1991, Vol 62, Num 6, pp 1527-1530, issn 0034-6748Article

Studies on sprayed lanthanum sulphide (La2S3) thin films from non-aqueous mediumBAGDE, G. D; PATHAN, H. M; LOKHANDE, C. D et al.Applied surface science. 2005, Vol 252, Num 5, pp 1502-1509, issn 0169-4332, 8 p.Article

A Rutherford backscattering spectroscopic study of the aluminium antimonide oxidation process in airSHIBATA, T; NAKATA, J; NANISHI, Y et al.Japanese journal of applied physics. 1994, Vol 33, Num 4A, pp 1767-1772, issn 0021-4922, 1Article

Interdiffusion studies in Bi-based layered systems with nanosecond laser pulsesMISSANA, T; AFONSO, C. N; DA SILVA, M. F et al.Applied physics. A, Solids and surfaces. 1994, Vol 59, Num 6, pp 653-658, issn 0721-7250Article

Collisional effects on the Weibel instabilityWALLACE, J. M; BRACKBILL, J. U; CRANFILL, C. W et al.The Physics of fluids. 1987, Vol 30, Num 4, pp 1085-1088, issn 0031-9171Article

Large deflection beam transport with screened rutherford scatteringPOMRANING, G. C.Progress in nuclear energy (New series). 1999, Vol 34, Num 4, pp 377-386, issn 0149-1970Article

Measurements of ion temperatures by means of Rutherford scattering of energetic neutrals above the limiting angleVAN BLOCKLAND, A. A. E; DONNE, A. J. H.Journal of applied physics. 1989, Vol 65, Num 2, pp 468-473, issn 0021-8979, 6 p.Article

GRAIN-BOUNDARY DIFFUSION OF AG THROUGH CU FILMSSCHOEN JM; POATE JM; DOHERTY CJ et al.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 11 PART. 1; PP. 6910-6914; BIBL. 10 REF.Article

DEPENDANCE THERMIQUE DE LA DIFFUSION ANORMALE DE RUTHERFORD DES ELECTRONS RAPIDES DANS LES CRISTAUX.VOROB'EV AA; KAPLIN VV; VOROB'EV SA et al.1978; IZVEST. VYSSH. UCHEBN. ZAVED., FIZ.; SUN; DA. 1978; VOL. 21; NO 7; PP. 29-35; BIBL. 8 REF.Article

Copper ion implanted aluminum nitride dilute magnetic semiconductors (DMS) prepared by molecular beam epitaxySHAH, A; AHMAD, Jamil; AHMAD, Ishaq et al.Applied surface science. 2014, Vol 317, pp 262-268, issn 0169-4332, 7 p.Article

The optical band gap and surface free energy of polyethylene modified by electron beam irradiationsABDUL-KADER, A. M.Journal of nuclear materials. 2013, Vol 435, Num 1-3, pp 231-235, issn 0022-3115, 5 p.Article

Resonance Coulomb scattering by shallow donor impurities in GaAs and InPALESHKIN, V. Ya; BURDEINY, D. I.Semiconductor science and technology. 2011, Vol 26, Num 9, issn 0268-1242, 095003.1-095003.7Article

Group-IV and V ion implantation into nanomaterials and elemental analysis on the nanometre scaleMARKWITZ, Andreas; KENNEDY, John.International journal of nanotechnology. 2009, Vol 6, Num 3-4, pp 369-383, issn 1475-7435, 15 p.Article

An analysis of the extended-transport correction with application to electron beam transportDRUMM, Clifton R; FAN, Wesley C; LORENCE, Leonard et al.Nuclear science and engineering. 2007, Vol 155, Num 3, pp 355-366, issn 0029-5639, 12 p.Conference Paper

Silicon crystal distortions at the Si(100)-SiO2 interface from analysis of ion-scatteringBONGIORNO, Angelo; PASQUARELLO, Alfredo; HYBERTSEN, Mark S et al.Microelectronic engineering. 2004, Vol 72, Num 1-4, pp 197-200, issn 0167-9317, 4 p.Conference Paper

Neoclassical tearing modesH.R.WILSON.Fusion science and technology. 2002, Vol 41, Num 2T, pp 107-115Conference Paper

Nuclear microprobe for integrated circuit process inspection. DiscussionTAKAI, M; MIMURA, R; SAWARAGI, H et al.Scanning microscopy. 1993, Vol 7, Num 3, pp 815-823, issn 0891-7035Article

On the spatial and temporal resolution of ion temperature measurements based on neutral beam scattering: comment onDesign of an ion temperature diagnostic based on neutral beam scattering [Rev.Sci. instrum.57,1792(1986)]DONNE, A. J. H; BARBIAN, E. P.Review of scientific instruments. 1987, Vol 58, Num 7, pp 1320-1321, issn 0034-6748Article

Measurement of (P, P) elastic cross-sections for 14N and 27Al at laboratory angles of 178° AND 140° in the range 0.5 2.5 MeVPAUL, A; RAMOS, A. R. L; RIJNIERS, L et al.Materials science forum. 2002, pp 191-196, issn 0255-5476, isbn 0-87849-887-7Conference Paper

Investigation of lateral straggling of Xe ions in potassium titanyl phosphateKE-MING WANG; BO-RONG SHI; BAO-DONG QU et al.Journal of applied physics. 1993, Vol 73, Num 11, pp 7222-7224, issn 0021-8979, 1Article

Radio frequency sputter deposition and properties of calcium fluoride thin filmsMARECHAL, N; QUESNEL, E; JULIET, P et al.Journal of applied physics. 1993, Vol 74, Num 8, pp 5203-5211, issn 0021-8979Article

Rutherford backscattering from a thick targetSMIT, Z.Physical review. A. 1993, Vol 48, Num 3, pp 2070-2076, issn 1050-2947, AArticle

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