LATERAL MIS TUNNEL TRANSISTORRUZYLLO J.1980; I.E.E.E. ELECTRON DEVICE LETT.; USA; DA. 1980; VOL. 1; NO 10; PP. 197-199; BIBL. 6 REF.Article

Selected aspects of very thin oxide growth processesRUZYLLO, J.Journal of the Electrochemical Society. 1987, Vol 134, Num 7, pp 1869-1870, issn 0013-4651Article

Effects of preoxidation ambient in very thin thermal oxide on siliconRUZYLLO, J.Journal of the Electrochemical Society. 1986, Vol 133, Num 8, pp 1677-1682, issn 0013-4651Article

SWITCHING MECHANISM IN MIS (N-P) DEVICESMAJKUSIAK B; JAKUBOWSKI A; RUZYLLO J et al.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 60; NO 2; PP. K171-K175; BIBL. 7 REF.Article

EFFECT OF MINORITY CARRIER INJECTION ON LATERAL CURRENT IN MIS TUNNEL STRUCTURESRUZYLLO J; KUCHARSKI K; JAKUBOWSKI A et al.1980; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1980; VOL. 23; NO 10; PP. 1041-1045; BIBL. 9 REF.Article

Atomic oxygen and the thermal oxidation of siliconHOFF, A. M; RUZYLLO, J.Applied physics letters. 1988, Vol 52, Num 15, pp 1264-1265, issn 0003-6951Article

Breadkown characteristics of oxides formed on fluorinated silicon surfacesMARSH, J; RUZYLLO, J.Thin solid films. 1991, Vol 202, Num 2, pp 221-226, issn 0040-6090Article

Analysis of characteristics of silicon metal/insulator semiconductor tunnel diodes with D.C.-plasma-grown oxideBECK, R. B; RUZYLLO, J.Thin solid films. 1986, Vol 136, Num 2, pp 173-180, issn 0040-6090Article

Non-IPA wafer drying technology for single-spin wet cleaningMIYA, Katsuhiko; KISHIMOTO, Takuya; IZUMI, Akira et al.Proceedings - Electrochemical Society. 2003, pp 57-63, issn 0161-6374, isbn 1-56677-411-X, 7 p.Conference Paper

Atomic layer deposition of silicon nitride barrier layer for self-aligned gate stackFINSTAD, Casey C; MUSCAT, Anthony J.Proceedings - Electrochemical Society. 2003, pp 86-92, issn 0161-6374, isbn 1-56677-411-X, 7 p.Conference Paper

Experimental validation of a science-based undercut removal model for the cleaning of micron scale particles from surfacesKUMAR, G; BEAUDOIN, S.Proceedings - Electrochemical Society. 2003, pp 176-181, issn 0161-6374, isbn 1-56677-411-X, 6 p.Conference Paper

Copper low-K contamination and post etch residues removal using supercritical CO₂-based processesMILLET, C; DAVIOT, J; DANEL, A et al.Proceedings - Electrochemical Society. 2003, pp 271-278, issn 0161-6374, isbn 1-56677-411-X, 8 p.Conference Paper

Effective post-etch residue removal on low-K films using single wafer processingKESTERS, E; GHEKIERE, J; VAN DOORNE, P et al.Proceedings - Electrochemical Society. 2003, pp 15-22, issn 0161-6374, isbn 1-56677-411-X, 8 p.Conference Paper

Post-etch cleaning of 300mm dual damascene low-K dielectric structures using supercritical CO₂TURKOT, Robert B; RAMACHANDRARAO, Vijayakumar S; LYER, Subramanyam A et al.Proceedings - Electrochemical Society. 2003, pp 254-262, issn 0161-6374, isbn 1-56677-411-X, 9 p.Conference Paper

Photoresist stripping using supercritical CO₂-based processesPERRUT, V; DANEL, A; MILLET, C et al.Proceedings - Electrochemical Society. 2003, pp 246-253, issn 0161-6374, isbn 1-56677-411-X, 8 p.Conference Paper

Predictive model-based control of critical oxide etches for sub-100nm processes in a single wafer wet processing systemLU, Y; YALAMANCHILI, M. R; ROSATO, J. J et al.Proceedings - Electrochemical Society. 2003, pp 49-56, issn 0161-6374, isbn 1-56677-411-X, 8 p.Conference Paper

Making supercritical CO₂ cleaning work: Proper selection of co-solvents and other issuesSEHGAL, Akshey.Proceedings - Electrochemical Society. 2003, pp 214-221, issn 0161-6374, isbn 1-56677-411-X, 8 p.Conference Paper

Additive technologies for sub100nm device cleaningMORINAGA, Hitoshi; ITOU, Atsushi; MOCHIZUKI, Hideaki et al.Proceedings - Electrochemical Society. 2003, pp 371-378, issn 0161-6374, isbn 1-56677-411-X, 8 p.Conference Paper

Advanced front end of the line clean for post CMP processesKASHKOUSH, Ismall; NOLAN, Thomas; NEMETH, Dennis et al.Proceedings - Electrochemical Society. 2003, pp 299-304, issn 0161-6374, isbn 1-56677-411-X, 6 p.Conference Paper

Evaluation of megasonic cleaning processesHOLSTEYNS, F; RISKIN, A; VEREECKE, G et al.Proceedings - Electrochemical Society. 2003, pp 161-167, issn 0161-6374, isbn 1-56677-411-X, 7 p.Conference Paper

Reversing of silicon surface aging by lamp cleaningSHANMUGASUNDARAM, K; CHANG, K; SHALLENBERGER, J et al.Proceedings - Electrochemical Society. 2003, pp 348-355, issn 0161-6374, isbn 1-56677-411-X, 8 p.Conference Paper

Study of the cleaning control using a megahertz nozzle sound pressure monitor system for single-plate spin cleanersFUJITA, H; HAYAMIZU, N; GOSHOZONO, T et al.Proceedings - Electrochemical Society. 2003, pp 168-175, issn 0161-6374, isbn 1-56677-411-X, 8 p.Conference Paper

Nearly isotropic etching of 6H-SiC in NF₃ and O₂ using a remote plasmaLUTHER, B. P; RUZYLLO, J; MILLER, D. L et al.Applied physics letters. 1993, Vol 63, Num 2, pp 171-173, issn 0003-6951Article

Characterization of near-surface electrical properties of multi-crystalline silicon wafersDRUMMOND, P; KSHIRSAGAR, A; RUZYLLO, J et al.Solid-state electronics. 2011, Vol 55, Num 1, pp 29-36, issn 0038-1101, 8 p.Article

Reduced pressure etching of thermal oxides in anhydrous HF/alcoholic gas mixturesTOREK, K; RUZYLLO, J; GRANT, R et al.Journal of the Electrochemical Society. 1995, Vol 142, Num 4, pp 1322-1326, issn 0013-4651Article