au.\*:("SØRENSEN, C. B")
Results 1 to 15 of 15
Selection :
5-THz bandwidth from a GaAs-on-silicon photoconductive receiverPEDERSEN, J. E; KEIDING, S. R; SØRENSEN, C. B et al.Journal of applied physics. 1993, Vol 74, Num 11, pp 7022-7024, issn 0021-8979Article
Observation of the i=1/2 fractional quantum Hall plateau in AlGaAs/GaAs/AlGaAs selectively doped double heterostructuresLINDELOF, P. E; BRUUS, H; TABORYSKI, R et al.Semiconductor science and technology. 1989, Vol 4, Num 10, pp 858-865, issn 0268-1242, 8 p.Article
MBE growth of two-dimensional electron gases on (110) GaAsSØRENSEN, C. B; GISLASON, H; HVAM, J. M et al.Journal of crystal growth. 1997, Vol 175-76, pp 1097-1101, issn 0022-0248, 2Conference Paper
Determination of the disulphide bridge arrangement of bovine histidine-rich glycoproteinSØRENSEN, C. B; KROGH-PEDERSEN, H; PETERSEN, T. E et al.FEBS letters. 1993, Vol 328, Num 3, pp 285-290, issn 0014-5793Article
Multiple Andreev reflections in diffusive SNS structuresTABORYSKI, R; KUTCHINSKY, J; HANSEN, J. B et al.Superlattices and microstructures. 1999, Vol 25, Num 5-6, pp 829-837, issn 0749-6036Article
Optical properties of GaAs/AlAs superlattices with a basisKRISTENSEN, A; LINDELOF, P. E; SMITH, H et al.Superlattices and microstructures. 1992, Vol 12, Num 3, pp 297-300, issn 0749-6036Article
Identification of novel and known mutations in the genes for keratin 5 and 14 in Danish patients with epidermolysis bullosa simplex : Correlation between genotype and phenotypeSØRENSEN, C. B; LADEKJAER-MIKKEISEN, A.-S; BOLUND, L et al.Journal of investigative dermatology. 1999, Vol 112, Num 2, pp 184-190, issn 0022-202XArticle
Non-linear flight dynamics at high angles-of-attackGRANASV, P; SØRENSEN, C. B; MOSEKILDE, E et al.Aeronautical Journal. 1998, Vol 102, Num 1016, pp 337-343, issn 0001-9240Article
Resonant tunnelling in superlattices with a basisKRISTENSEN, A; LINDELOF, P. E; SØRENSEN, C. B et al.Semiconductor science and technology. 1998, Vol 13, Num 8, pp 910-914, issn 0268-1242Article
Superconductor-semiconductor-superconductor planar junctions of aluminium on δ-doped gallium-arsenideTABORYSKI, R; CLAUSEN, T; KUTCHINSKY, J et al.IEEE transactions on applied superconductivity. 1997, Vol 7, Num 2, pp 2809-2813, issn 1051-8223, 3Conference Paper
A photoluminescence study of δ-doped GaAsEL ALLALI, M; VEJE, E; SORENSEN, C. B et al.Journal de physique. IV. 1993, Vol 3, Num 5, pp 299-302, issn 1155-4339Conference Paper
Thermoactivated conductivity in p-GaAs/Al0.5Ga0.5As below 5 k under combined influence of illumination and uniaxial stressKRAAK, W; MININA, N. Ya; ILIEVSKY, A. A et al.Physica status solidi. B. Basic research. 2003, Vol 235, Num 2, pp 390-395, issn 0370-1972, 6 p.Conference Paper
Impurity-related emission in the photoluminescence from p-type modulation doped Al1-xGaxAs/GaAs heterostructuresBRYJA, L; KUBISA, M; RYCZKO, K et al.Solid state communications. 2002, Vol 122, Num 7-8, pp 379-384, issn 0038-1098Article
Excitons at the p-type modulation doped Al0.5Ga0.5As/GaAs interfaceBRYJA, L; RYCZKO, K; KUBISA, M et al.SPIE proceedings series. 2001, pp 16-20, isbn 0-8194-4116-3Conference Paper
Persistent photoconductivity in p-type Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As heterostructuresKRAAK, W; MININA, N. Ya; SAVIN, A. M et al.Nanotechnology (Bristol. Print). 2001, Vol 12, Num 4, pp 577-580, issn 0957-4484Conference Paper