au.\*:("SACEDON, J. L")
Results 1 to 25 of 27
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SiO2 growth on GaAs as a result of chemical reactions between Si and GaAs oxidesCUBERES, M. T; SACEDON, J. L.Surface science. 1991, Vol 251-52, pp 92-96, issn 0039-6028, 5 p.Conference Paper
Order at the boundaries of phase-shifted 7×7 domains on Si(111)CUBERES, M. T; SACEDON, J. L.Journal of physics. Condensed matter (Print). 1996, Vol 8, Num 45, pp 8743-8751, issn 0953-8984Article
Study of the oxygen depletion in the film-substrate interface of superconducting YBa2Cu3O7-x filmsCOLINO, J; SACEDON, J. L; VICENT, J. L et al.Applied physics letters. 1991, Vol 59, Num 25, pp 3327-3329, issn 0003-6951Article
X-ray photoelectron spectroscopy study of the interfacial reactivity of Si with the oxidized GaAs(100) surfaceCUBERES, M. T; SACEDON, J. L.Applied physics letters. 1990, Vol 57, Num 26, pp 2794-2796, issn 0003-6951, 3 p.Article
Study of modified lead titanate ceramics by Auger electron spectroscopyPARDO, L; PINA, J. I; SACEDON, J. L et al.Journal of materials science. 1988, Vol 23, Num 1, pp 359-364, issn 0022-2461Article
Direct electron beam writing of gallium oxide on GaAs(111) as surfacesALONSO, M; SACEDON, J. L; SORIA, F et al.Applied physics letters. 1984, Vol 45, Num 2, pp 154-156, issn 0003-6951Article
Effects of thermal nitridation on the radiation hardness of the SiO2/Si interfaceDE CASTRO, A. J; FERNANDEZ, M; SACEDON, J. L et al.Journal of applied physics. 1993, Vol 73, Num 11, pp 7465-7470, issn 0021-8979, 1Article
Chemisorption of Si on Al(111)surfaces: a local-chemical-bond analysis from Auger transition density of statesMUNOZ, M. C; SACEDON, J. L; SORIA, F et al.Surface science. 1986, Vol 172, Num 2, pp 442-454, issn 0039-6028Article
Analysis of native and anodic oxides of n-doped Al films by Auger and photoemission spectroscopyAVILA, J; SACEDON, J. L.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1992, Vol 10, Num 4, pp 2698-2703, issn 0734-2101, 3Conference Paper
Surface protrusion parameters in film columnar growthSACEDON, J. L; RODRIGUEZ-CANAS, E; MUNUERA, C et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 19, pp 195413.1-195413.11, issn 1098-0121Article
The chemistry of O in reduction processes of the GaAs native oxidesCUBERES, M. T; SACEDON, J. L.Surface science. 1992, Vol 269-270, pp 929-933, issn 0039-6028, bConference Paper
State identification of GaAs(111) oxidized surfaces by an x-ray photoemission decomposition methodGOMEZ-GONI, J; MUNOZ, M. C; LOPEZ DE CEBALLOS, I et al.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1988, Vol 6, Num 4, pp 2238-2242, issn 0734-2101Article
Relationship between the surface morphology and the height distribution curve in thermal evaporated Au thin filmsRODRIGUEZ-CANAS, E; AZNAREZ, J. A; OLIVA, A. I et al.Surface science. 2006, Vol 600, Num 16, pp 3110-3120, issn 0039-6028, 11 p.Article
Electron-beam-induced reactions at O2/GaAs(100) interfacesPALOMARES, F. J; ALONSO, M; JIMENEZ, I et al.Surface science. 2001, Vol 482-85, pp 121-127, issn 0039-6028, 1Conference Paper
The Y-Si(111) interface formation studied by scanning tunneling microscopyPOLOP, C; SACEDON, J. L; MARTIN-GAGO, J. A et al.Surface science. 2000, Vol 454-56, pp 842-846, issn 0039-6028Conference Paper
STM studies of the growth of the Si/Cu(110) surface alloyPOLOP, C; SACEDON, J. L; MARTIN-GAGO, J. A et al.Surface science. 1998, Vol 402-04, pp 245-248, issn 0039-6028Conference Paper
Thermal effects on the growth of SiO2 on GaAs(100) by reduction of native oxidesJIMENEZ, I; PALOMARES, F. J; AVILA, J et al.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1993, Vol 11, Num 4, pp 1028-1032, issn 0734-2101, 1Conference Paper
Kinetically driven self-organization during hydrogen-assisted MBE growth on GaAs(110)CRESPILLO, M. L; SACEDON, J. L; JOYCE, B. A et al.Microelectronics journal. 2005, Vol 36, Num 3-6, pp 581-585, issn 0959-8324, 5 p.Conference Paper
A new method to study hydriding processes from the inner surfaces of fuel claddingsSACEDON, J. L; DIAZ, M; MOYA, J. S et al.Journal of nuclear materials. 2004, Vol 327, Num 1, pp 11-18, issn 0022-3115, 8 p.Article
A study of the formation of yttrium silicides epitaxially grown on Si(111)ROGERO, C; POLOP, C; SACEDON, J. L et al.Surface and interface analysis. 2004, Vol 36, Num 8, pp 1195-1198, issn 0142-2421, 4 p.Conference Paper
Photoelectron emission from heterojunctions with intralayers: band-offset changes vs. band-bending effectsHORN, K; MORENO, M; ALONSO, M et al.Vacuum. 2002, Vol 67, Num 1, pp 115-123, issn 0042-207X, 9 p.Conference Paper
Zirconium oxide film formation on zircaloy by water corrosionMOYA, J. S; DIAZ, M; BARTOLOME, J. F et al.Acta materialia. 2000, Vol 48, Num 18-19, pp 4749-4754, issn 1359-6454Conference Paper
Auger electron spectroscopy depth profile study in fracture surfaces of sinterized YBa2Cu3O7-xCOLINO, J; SACEDON, J. L; DEL OLMO, L et al.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1990, Vol 8, Num 6, pp 4021-4025, issn 0734-2101Article
Influence of Si oxidation methods on the distribution of suboxides at Si/SiO2 interfaces and their band alignment: a synchrotron photoemission studyJIMENEZ, I; SACEDON, J. L.Surface science. 2001, Vol 482-85, pp 272-278, issn 0039-6028, 1Conference Paper
Surface voltage induced by electron trapping and interface charge buildup in silicon oxynitride thin filmsDE CASTRO, A. J; FERNANDEZ, M; SACEDON, J. L et al.Surface science. 1992, Vol 269-270, pp 804-809, issn 0039-6028, bConference Paper
