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ELECTRICAL, RUTHERFORD BACKSCATTERING AND TRANSMISSION ELECTRON MICROSCOPY STUDIES OF FURNACE ANNEALED ZINC IMPLANTED GAASKULAR SS; SEALY BJ; STEPHENS KG et al.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 8; PP. 831-838; BIBL. 16 REF.Article

Performance enhancement on sub-70nm strained silicon SOI MOSFETs on ultra-thin thermally mixed strained silicon/SiGe on insulator(TM-SGOI) substrate with raised S/DLEE, B. H; MOCUTA, A; LAVOIE, C et al.IEDm : international electron devices meeting. 2002, pp 946-948, isbn 0-7803-7462-2, 3 p.Conference Paper

Status of 300 mm SOI material: Comparisons with 200 mmHOVEL, H; ALMONTE, M; BETTINGER, J et al.Proceedings - Electrochemical Society. 2003, pp 75-80, issn 0161-6374, isbn 1-56677-375-X, 6 p.Conference Paper

Performance comparison and channel length scaling of strained si FETs on SiGe-on-Insulator (SGOI)CAI, J; RIM, K; KANARSKY, T et al.International Electron Devices Meeting. 2004, pp 165-168, isbn 0-7803-8684-1, 1Vol, 4 p.Conference Paper

Defects and electrical consequences in SOI buried oxidesHOVEL, H. J; ALMONTE, M; LEE, J. D et al.Proceedings - Electrochemical Society. 2003, pp 105-110, issn 0161-6374, isbn 1-56677-375-X, 6 p.Conference Paper

Mechanism for enhancement of electrical activation of silicon in GaAs by aluminum co-implantationDE SOUZA, J. P; SADANA, D. K.Applied physics letters. 1993, Vol 63, Num 23, pp 3200-3202, issn 0003-6951Article

Direct evidence of arsenic clustering in high dose arsenic-implanted siliconWU, N. R; SADANA, D. K; WASHBURN, J et al.Applied physics letters. 1984, Vol 44, Num 8, pp 782-784, issn 0003-6951Article

LASER ANNEALING OF CAPPED AND UNCAPPED GAASKULAR SS; SEALY BJ; BADAWI MH et al.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 14; PP. 413-414; BIBL. 5 REF.Article

Formation of highly n-doped gallium arsenide layers by rapid thermal oxidation followed by rapid thermal annealing of silicon-capped gallium arsenideSADANA, D. K; DE SOUZA, J. P; CARDONE, F et al.Applied physics letters. 1991, Vol 58, Num 11, pp 1190-1192, issn 0003-6951, 3 p.Article

N+doping of allium arsenide by rapid thermal oxidation of a silicon capSADANA, D. K; DE SOUZA, J. P; CARDONE, F et al.Applied physics letters. 1990, Vol 57, Num 16, pp 1681-1683, issn 0003-6951Article

Ion implantation in gallium arsenide MESFET technologyDE SOUZA, J. P; SADANA, D. K.I.E.E.E. transactions on electron devices. 1992, Vol 39, Num 1, pp 166-175, issn 0018-9383Article

High resolution transmission electron microscopy study of Se+-implanted and annealed GaAs: mechanisms of amorphization and recrystallizationSADANA, D. K; SANDS, T; WASHBURN, J et al.Applied physics letters. 1984, Vol 44, Num 6, pp 623-625, issn 0003-6951Article

Shallow junction formation by preamorphization with tin implantationDELFINO, M; SADANA, D. K; MORGAN, A. E et al.Applied physics letters. 1986, Vol 49, Num 10, pp 575-577, issn 0003-6951Article

High resolution structural characterization of the amorphous-crystalline interface inSe+-implanted GaAsSANDS, T; SADANA, D. K; GRONSKY, R et al.Applied physics letters. 1984, Vol 44, Num 9, pp 874-876, issn 0003-6951Article

Reaction of titanium with silicon nitride under rapid thermal annealing = Réaction du titane avec le nitrure de silicium sous recuit rapideMORGAN, A. E; BROADBENT, E. K; SADANA, D. K et al.Applied physics letters. 1986, Vol 49, Num 19, pp 1236-1238, issn 0003-6951Article

Reaction of titanium with silicon nitride under rapid thermal annealingMORGAN, A. E; BROADBENT, E. K; SADANA, D. K et al.Applied physics letters. 1986, Vol 49, Num 19, pp 1236-1238, issn 0003-6951Article

Annealing behavior of GaAs implanted with Si and SIF+ and rapid thermally annealed with plasma-enhanced chemical vapor deposited silicon nitride capDE SOUZA, J. P; SADANA, D. K; BARATTE, H et al.Applied physics letters. 1990, Vol 57, Num 11, pp 1129-1131, issn 0003-6951, 3 p.Article

Characterization of a self-aligned cobalt silicide processMORGAN, A. E; BROADBENT, E. K; DELFINO, M et al.Journal of the Electrochemical Society. 1987, Vol 134, Num 4, pp 925-935, issn 0013-4651Article

Annealing and oxidation behavior of low-pressure chemical vapor deposited tungsten slicide layers on polycrystalline silicon gatesSADANA, D. K; MORGAN, A. E; NORCOTT, M. H et al.Journal of applied physics. 1987, Vol 62, Num 7, pp 2830-2835, issn 0021-8979Article

Self-aligned silicided (PtSi and Cosi2) ultra-shallow p+/n junctionsBROADBENT, E. K; DELFINO, M; MORGAN, A. E et al.IEEE electron device letters. 1987, Vol 8, Num 7, pp 318-320, issn 0741-3106Article

Transmission electron microscopy of aluminum implanted and annealed (100) Si: direct evidence of aluminum precipitate formationSADANA, D. K; NORCOTT, M. H; WILSON, R. G et al.Applied physics letters. 1986, Vol 49, Num 18, pp 1169-1171, issn 0003-6951Article

Ion implantation of Si by 12C, 29Si, and 120Sn: amorphization and annealing effectsKOU-WEI WANG; SPITZER, W. G; HUBLER, G. K et al.Journal of applied physics. 1985, Vol 58, Num 12, pp 4553-4564, issn 0021-8979Article

Residual defects following rapid thermal annealing of shallow boron and boron fluoride implants into preamorphized siliconCARTER, C; MASZARA, W; SADANA, D. K et al.Applied physics letters. 1984, Vol 44, Num 4, pp 459-461, issn 0003-6951Article

Effect of F co-implant during annealing of Be-implanted GaAsHALLALI, P. E; BARATTE, H; CARDONE, F et al.Applied physics letters. 1990, Vol 57, Num 6, pp 569-571, issn 0003-6951, 3 p.Article

Recrystallization of amorphous gallium arsenide by ion beamsSADANA, D. K; CHOKSI, H; WASHBURN, J et al.Applied physics letters. 1984, Vol 44, Num 3, pp 301-303, issn 0003-6951Article

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