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Single photon sources using InAs/InP quantum dotsHOSTEIN, R; GOGNEAU, N; SAGNES, I et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7222, issn 0277-786X, isbn 978-0-8194-7468-1 0-8194-7468-1, 1Vol, 72221I.1-72221I.8Conference Paper

Continuous-wave 1.55 μm diode-pumped surface emitting semiconductor laser for broadband multiplex spectroscopyJACQUEMET, M; PICQUE, N; GUELACHVILI, G et al.Optics letters. 2007, Vol 32, Num 11, pp 1387-1389, issn 0146-9592, 3 p.Article

Longitudinal mode selection in constricted photonic crystal guides and electrically injected lasersDE ROSSI, S; SAGNES, I; LEGRATIET, L et al.Journal of lightwave technology. 2005, Vol 23, Num 3, pp 1363-1368, issn 0733-8724, 6 p.Article

Photoluminescence probing of non-radiative channels in hydrogenated In(Ga)As/GaAs quantum dotsSAINT-GIRONS, G; LEMAITRE, A; NAVARRO-PAREDES, V et al.Journal of crystal growth. 2004, Vol 264, Num 1-3, pp 334-338, issn 0022-0248, 5 p.Article

Monolithic tunable InP-based vertical cavity surface emitting laserLECLERCQ, J. L; REGRENY, P; PLAIS, A et al.SPIE proceedings series. 2002, pp 448-454, isbn 0-8194-4518-5Conference Paper

1.3 μm electroluminescence of LP-MOVPE grown InAs/GaAs quantum dots, and influence of the re-growth temperature on the spectral responseSAINT-GIRONS, G; MEREUTA, A; GERARD, J. M et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 78, Num 2-3, pp 145-147, issn 0921-5107Article

GaAs/GaAs twist-bonding for compliant substrates : interface structure and epitaxial growthPATRIARCHE, G; MERIADEC, C; LEROUX, G et al.Applied surface science. 2000, Vol 164, pp 15-21, issn 0169-4332Conference Paper

Infrared spectroscopy in p-type SiGe/Si quantum wellsBERROIR, J. M; ZANIER, S; GULDNER, Y et al.Applied surface science. 1996, Vol 102, pp 331-335, issn 0169-4332Conference Paper

Design and properties of high-power highly-coherent single-frequency VECSEL emitting in the near- to mid-IR for photonic applicationsGARNACHE, A; LAURAIN, A; MYARA, M et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 7919, issn 0277-786X, isbn 978-0-8194-8456-7, 791914.1-791914.11Conference Paper

Technologies for thermal management of mid-IR Sb-based surface emitting lasersPEREZ, J.-P; LAURAIN, A; CERUTTI, L et al.Semiconductor science and technology. 2010, Vol 25, Num 4, issn 0268-1242, 045021.1-045021.6Article

Temporal solitons and pulse compression in photonic crystal waveguidesCOLMAN, P; HUSKO, C; COMBRIE, S et al.Nature photonics (Print). 2010, Vol 4, Num 12, pp 862-868, issn 1749-4885, 7 p.Article

Photonic crystal nanolasers with controlled spontaneous emissionBRAIVE, R; BEVERATOS, A; LALANNE, P et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, Vol 6988, pp 698813.1-698813.8, issn 0277-786X, isbn 978-0-8194-7186-4 0-8194-7186-0Conference Paper

Incoherent and coherent writing and erasure of cavity solitons in an optically pumped semiconductor amplifierBARBAY, S; MENESGUEN, Y; HACHAIR, X et al.Optics letters. 2006, Vol 31, Num 10, pp 1504-1506, issn 0146-9592, 3 p.Article

Towards the creation of quantum dots using FIB technologyKITSLAAR, P; STRASSNER, M; SAGNES, I et al.Microelectronic engineering. 2006, Vol 83, Num 4-9, pp 811-814, issn 0167-9317, 4 p.Conference Paper

A new concept for tunable long wavelength VCSELRIEMENSCHNEIDER, F; SAGNES, I; BÖHM, G et al.Optics communications. 2003, Vol 222, Num 1-6, pp 341-350, issn 0030-4018, 10 p.Article

(InGa)(NAs)/GaAs structures emitting in 1-1.6 μm wavelength rangeMEREUTA, A; SAINT-GIRONS, G; BOUCHOULE, S et al.Optical materials (Amsterdam). 2001, Vol 17, Num 1-2, pp 185-188, issn 0925-3467Conference Paper

Room temperature continuous wave operation under optical pumping of a 1.48 μm vertical cavity laser based on AlGaAsSb mirrorHARMAND, J. C; UNGARO, G; KAZMIERSKI, C et al.Journal of crystal growth. 1999, Vol 201202, pp 837-840, issn 0022-0248Conference Paper

Investigation of optical properties of free-standing porous silicon films by absorption and mirage effectVINCENT, G; LEBLANC, F; SAGNES, I et al.Journal of luminescence. 1993, Vol 57, Num 1-6, pp 217-221, issn 0022-2313Article

Optical absorption evidence of a quantum size effect in porous siliconSAGNES, I; HALIMAOUI, A; VINCENT, G et al.Applied physics letters. 1993, Vol 62, Num 10, pp 1155-1157, issn 0003-6951Article

Polarized single-lobed surface emission in mid-infrared, photonic-crystal, quantum-cascade lasersGANGYIXU; CHASSAGNEUX, Yannick; COLOMBELLI, Raffaele et al.Optics letters. 2010, Vol 35, Num 6, pp 859-861, issn 0146-9592, 3 p.Article

A solid state ultrabright source of entangled photon pairsDOUSSE, A; SUFFCZYNSKI, J; BEVERATOS, A et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 7945, issn 0277-786X, isbn 978-0-8194-8482-6, 79452I.1-79452I.7Conference Paper

Tunable single-frequency operation of a diode-pumped vertical external-cavity laser at the cesium D₂ lineCOCQUELIN, B; HOLLEVILLE, D; LUCAS-LECLIN, G et al.Applied physics. B, Lasers and optics (Print). 2009, Vol 95, Num 2, pp 315-321, issn 0946-2171, 7 p.Article

Energy scaling of femtosecond and picosecond fiber oscillators beyond the microjoule levelORTAC, B; BAUMGARTL, M; SCHMIDT, O et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7195, issn 0277-786X, isbn 978-0-8194-7441-4 0-8194-7441-X, 1Vol, 719515.1-719515.9Conference Paper

One-step nano-selective area growth (nano-SAG) of localized InAs/InP quantum dots : First step towards single-photon source applicationsGOGNEAU, N; LE GRATIET, L; CAMBRIL, E et al.Journal of crystal growth. 2008, Vol 310, Num 15, pp 3413-3415, issn 0022-0248, 3 p.Article