Pascal and Francis Bibliographic Databases

Help

Search results

Your search

au.\*:("SAKS NS")

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 9 of 9

  • Page / 1
Export

Selection :

  • and

LOW FREQUENCY CONDUCTANCE AND CAPACITANCE MEASUREMENTS ON MOS CAPACITORS IN WEAK INVERSION.SAKS NS.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 9; PP. 737-744; BIBL. 19 REF.Article

FABRICATION OF SURFACE-CHANNEL CHARGE-COUPLED DEVICES WITH ULTRALOW DENSITY OF INTERFACE STATESSAKS NS.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 8; PP. 737-739; BIBL. 6 REF.Article

A TECHNIQUE FOR SUPPRESSING DARK CURRENT GENERATED BY INTERFACE STATE IN BURIED CHANNEL CCD IMAGERSSAKS NS.1980; I.E.E.E. ELECTRON DEVICE LETT.; USA; DA. 1980; VOL. 1; NO 7; PP. 131-133; BIBL. 4 REF.Article

INTERFACE STATE TRAPPING AND DARK CURRENT GENERATION IN BURIED-CHANNEL CHARGE-COUPLED DEVICESSAKS NS.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 3; PART. 1; PP. 1745-1753; BIBL. 23 REF.Article

ELECTRICAL TRANSPORT PHENOMENA IN AMORPHOUS GALLIUM PHOSPHIDE FILMSBARBE DF; SAKS NS.1973; J. APPL. PHYS.; U.S.A.; DA. 1973; VOL. 44; NO 4; PP. 1666-1672; BIBL. 15 REF.Serial Issue

TIME DEPENDENCE OF DEPLETION REGION FORMATION IN PHOSPHORUS-DOPED SILICON MOS DEVICES AT CRYOGENIC TEMPERATURESSAKS NS; NORDBRYHN A.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 11 PART. 1; PP. 6962-6968; BIBL. 15 REF.Article

ELECTRONIC TRANSPORT IN AMORPHOUS GAAS AND GA-MG-AS THIN FILMS.SAKS NS; BARBE DF; ANDERSON GW et al.1974; I.E.E.E. TRANS. PARTS HYBR. PACKAG.; U.S.A.; DA. 1974; VOL. 10; NO 4; PP. 244-251; BIBL. 27 REF.Article

OPTICAL AND ELECTRICAL PROPERTIES OF BORON-IMPLANTED AMORPHOUS GERMANIUM THIN FILMS.ANDERSON GW; DAVEY JE; COMAS J et al.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 10; PP. 4528-4533; BIBL. 27 REF.Article

A VIRTUAL SELF-ALIGNED PROCESS FOR N-CHANNEL INP IGFET'S (OR MISFET'S)TSENG WF; BARK ML; DIETRICH HB et al.1981; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1981; VOL. 2; NO 11; PP. 299-301; BIBL. 18 REF.Article

  • Page / 1