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"SAPHIR", LE PLUS GROS PETROLIER FRANCAIS1973; PETROLE INFORM., REV. PETROL.; FR.; DA. 1973; NO 1267; PP. 17-18Serial Issue

POLISHING OF SAPPHIRE WITH COLLOIDAL SILICA.GUTSCHE HW; MOODY JW.1978; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1978; VOL. 125; NO 1; PP. 136-138; BIBL. 13 REF.Article

FULLY DECODED MNOS STORAGE ARRAYS IN ESFI MOS TECHNOLOGY.HORNINGER K.1974; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1974; VOL. 9; NO 6; PP. 444-446; BIBL. 6 REF.Article

PROPERTIES OF INTERCONNECTION ON SILICON, SAPPHIRE, AND SEMI-INSULATING GALLIUM ARSENIDE SUBSTRATESHAN TZONG YUAN; YUNG TAO LIN; SHANG YI CHIANG et al.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 4; PP. 639-644; BIBL. 11 REF.Article

SURFACE CHARGE EFFECTS ON THE RESISTIVITY AND HALL COEFFICIENT OF THIN SILICON-ON-SAPPHIRE FILMSHAM WE.1972; APPL. PHYS. LETTERS; U.S.A.; DA. 1972; VOL. 21; NO 9; PP. 440-443; BIBL. 24 REF.Serial Issue

GENERATEUR DE VIBRATIONS ELECTRIQUES STABILISE PAR UN RESONATEUR MECANIQUE EN SAPHIR A 4,2 KKOCHUBEJ AD; MITROFANOV VP.1978; PRIBORY TEKH. EKSPER.; SUN; DA. 1978; NO 5; PP. 144-146; BIBL. 4 REF.Article

FAULT-FREE SILICON AT THE SILICON/SAPPHIRE INTERFACEPONCE FA.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 4; PP. 371-373; BIBL. 9 REF.Article

SAPPHIRES OF MONTANA = LES SAPHIRS DU MONTANAMAGGART HARLEY.1981; LAPIDARY J.; ISSN 0023-8457; USA; DA. 1981-10; VOL. 35; NO 7; PP. 1446-1452; ILL.Article

GROWTH OF SHAPED SAPPHIRE SINGLE CRYSTALS.HURLEY GF.1973; IN: 18TH SYMP. ART GLASSBLOWING. PROC.; DENVER, COLO,; 1973; WILMINGTON; AM. SCI. GLASSBOWERS SOC.; DA. 1973; PP. 97-103; BIBL. 6 REF.Conference Paper

FETTERING EFFECT BY OXYGEN IMPLANTATION IN SOSYAMAMOTO Y; WILSON IH; ITOH T et al.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 6; PP. 403-405; BIBL. 10 REF.Article

SAPPHIRES EXPAND ELECTRONIC DEVICE APPLICATIONSMARUYAMA T; ISHIBITSU K; NOSAKA S et al.1978; J. ELECTRON. ENGNG; JPN; DA. 1978; NO 141; PP. 22-25Article

EFFET DES CONDITIONS DE VIDE SUR LA STRUCTURE ET LES PROPRIETES ELECTROPHYSIQUES DE COUCHES EPITAXIALES DE SILICIUM SUR LE SAPHIRSTADNIK AV; KOSENKO VE; POLUDIN VI et al.1972; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1972; NO 10; PP. 74-80; BIBL. 15 REF.Serial Issue

FORMING ELECTRICAL INTERCONNECTIONS THROUGH SEMICONDUCTOR WAFERSANTHONY TR.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 8; PP. 5340-5349; BIBL. 13 REF.Article

SAPPHIRE BRINGS OUT THE BEST IN C-MOS.EATON SS.1975; ELECTRONICS; U.S.A.; DA. 1975; VOL. 48; NO 12; PP. 115-120Article

SOLUTION OF LAUE BACK REFLECTION PATTERNS OF SAPPHIRE CRYSTALS USING A COMPUTER TECHNIQUE.ANAZIA C; CHANG OU LEE; JERNER RC et al.1975; METALLURG. TRANS. A; U.S.A.; DA. 1975; VOL. 6; NO 9; PP. 1751-1753; BIBL. 7 REF.Article

OPTICAL CONTACT APPROACH TO LASER ROD SUPPORTGURSKI TR.1972; APPL. OPT.; U.S.A.; DA. 1972; VOL. 11; NO 9; PP. 2105-2106; BIBL. 1 REF.Serial Issue

AN ANISOTROPY OF SAPPHIRE CRYSTALSNIKOLOVA EG; HRISTOVA KK.1979; C.R. ACAD. BULG. SCI.; BGR; DA. 1979; VOL. 32; NO 6; PP. 739-740; BIBL. 6 REF.Article

CROSS-SECTIONAL ELECTRON MICROSCOPY OF SILICON ON SAPPHIRE.ABRAHAMS MS; BUIOCCHI CJ.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 27; NO 6; PP. 325-327; BIBL. 16 REF.Article

NATURE DE LA BANDE D'ABSORPTION A 7,0 EV DANS LE SAPHIRKUZNETSOV A.1975; IZVEST. AKAD. NAUK ESTON. S.S.R., FIZ. MAT.; S.S.S.R.; DA. 1975; VOL. 24; NO 4; PP. 433-437; ABS. EST. ANGL.; BIBL. 17 REF.Article

LE "SAPHIR", PETROLIER DE 280000 TDW, NOUVEAU DETENTEUR DU RECORD DE PORT EN LOURD DES NAVIRES FRANCAIS, CONSTRUIT A SAINT-NAZAIRE POUR LA COMPAGNIE NAVALE DES PETROLES1973; NAV. PORTS CHANTIERS; FR.; DA. 1973; NO 276; PP. 363-366Serial Issue

NATURE DE LA COLORATION DES SAPHIRS NATURELS ET SYNTHETIQUES ET METHODE RAPIDE D'IDENTIFICATIONGRANADCHIKOVA BG; NIKOL'SKAYA LV; SAMOJLOVICH MI et al.1979; DOKL. AKAD. NAUK S.S.S.R.; SUN; DA. 1979; VOL. 246; NO 3; PP. 599-601; BIBL. 2 REF.Article

ETUDE DE LA STABILITE DE LA FREQUENCE D'UN OSCILLATEUR A RESONATEUR EN SAPHIRAPAL'KOV VK; MITROFANOV VP; SHIYAN VS et al.1978; DOKL. AKAD NAUK S.S.S.R.; SUN; DA. 1978; VOL. 242; NO 3; PP. 578-580; BIBL. 6 REF.Article

PERSPECTIVES D'UTILISATION DES TENSIOMETRES EN SAPHIR RECOUVERTS D'UNE COUCHE EPITAXIALE DE SI DANS LA CONSTRUCTION D'APPAREILS HYDROMETEOROLOGIQUESGUSEV ID; KSENOFONTOV ME; SMYSLOV II et al.1972; TRUDY NAUCHN.-ISSLEDOVAT. INST. GIDROMETEOROL. PRIBOROSTR., MOSKVA; S.S.S.R.; DA. 1972; NO 26; PP. 90-100; BIBL. 7REF.Serial Issue

(1210)-ZONE FRACTURE ANISOTROPY OF SAPPHIREKRELL A; SCHULZE D.1979; PHYS. STATUS SOLIDI, A; DDR; DA. 1979; VOL. 52; NO 1; PP. K45-K48; BIBL. 6 REF.Article

GAUGE LENGTH AND SURFACE DAMAGE EFFECTS ON THE STRENGTH DISTRIBUTIONS OF SILICON CARBIDE AND SAPPHIRE FILAMENTSKOTCHICK DM; HINK RC; TRESSLER RE et al.1975; J. COMPOSITE MATER.; U.S.A.; DA. 1975; VOL. 9; PP. 327-336; BIBL. 15 REF.Article

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