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POLISHING OF SAPPHIRE WITH COLLOIDAL SILICA.GUTSCHE HW; MOODY JW.1978; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1978; VOL. 125; NO 1; PP. 136-138; BIBL. 13 REF.Article

GENERATEUR DE VIBRATIONS ELECTRIQUES STABILISE PAR UN RESONATEUR MECANIQUE EN SAPHIR A 4,2 KKOCHUBEJ AD; MITROFANOV VP.1978; PRIBORY TEKH. EKSPER.; SUN; DA. 1978; NO 5; PP. 144-146; BIBL. 4 REF.Article

SAPPHIRES OF MONTANA = LES SAPHIRS DU MONTANAMAGGART HARLEY.1981; LAPIDARY J.; ISSN 0023-8457; USA; DA. 1981-10; VOL. 35; NO 7; PP. 1446-1452; ILL.Article

CORNISH SAPPHIRELEFEVRE CHRISTENSEN S.1979; GEMS MINER.; USA; DA. 1979; NO 502; PP. 46-59; (2 P.); 3 ILL.Article

SAPPHIRES EXPAND ELECTRONIC DEVICE APPLICATIONSMARUYAMA T; ISHIBITSU K; NOSAKA S et al.1978; J. ELECTRON. ENGNG; JPN; DA. 1978; NO 141; PP. 22-25Article

AN ANISOTROPY OF SAPPHIRE CRYSTALSNIKOLOVA EG; HRISTOVA KK.1979; C.R. ACAD. BULG. SCI.; BGR; DA. 1979; VOL. 32; NO 6; PP. 739-740; BIBL. 6 REF.Article

(1210)-ZONE FRACTURE ANISOTROPY OF SAPPHIREKRELL A; SCHULZE D.1979; PHYS. STATUS SOLIDI, A; DDR; DA. 1979; VOL. 52; NO 1; PP. K45-K48; BIBL. 6 REF.Article

ON THE VACUUM ULTRAVIOLET TRANSPARENCY OF SAPPHIREABRAMOV VN; IVANOV BG; KUZNETSOV AI et al.1978; PHYS. STATUS SOLIDI, A; DDR; DA. 1978; VOL. 48; NO 2; PP. 287-292; ABS. RUS; BIBL. 16 REF.Article

NATURE DE LA COLORATION DES SAPHIRS NATURELS ET SYNTHETIQUES ET METHODE RAPIDE D'IDENTIFICATIONGRANADCHIKOVA BG; NIKOL'SKAYA LV; SAMOJLOVICH MI et al.1979; DOKL. AKAD. NAUK S.S.S.R.; SUN; DA. 1979; VOL. 246; NO 3; PP. 599-601; BIBL. 2 REF.Article

ETUDE DE LA STABILITE DE LA FREQUENCE D'UN OSCILLATEUR A RESONATEUR EN SAPHIRAPAL'KOV VK; MITROFANOV VP; SHIYAN VS et al.1978; DOKL. AKAD NAUK S.S.S.R.; SUN; DA. 1978; VOL. 242; NO 3; PP. 578-580; BIBL. 6 REF.Article

Antireflection coating for sapphire with consideration of mechanical propertiesGÖDEKER, C; SCHULZ, U; KAISER, N et al.Surface & coatings technology. 2014, Vol 241, pp 59-63, issn 0257-8972, 5 p.Conference Paper

Strength of silicon, sapphire and glass in the subthreshold flaw regionJUNG, Yeon-Gil; PAJARES, Antonia; BANERJEE, Rajat et al.Acta materialia. 2004, Vol 52, Num 12, pp 3459-3466, issn 1359-6454, 8 p.Article

MEASUREMENTS OF RAMAN INTENSITIES AND PRESSURE DEPENDENCE OF PHONON FREQUENCIES IN SAPPHIREWATSON GH JR; DANIELS WB; WANG CS et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 2; PP. 956-958; BIBL. 18 REF.Article

MELANGE DE SIGNAUX UHF SUR UNE COUCHE SUPRACONDUCTRICE DE NITRURE DE NIOBIUMERU II; KRUT'KO AP; PESKOVATSKIJ SA et al.1980; RADIOTEKH. I ELEKTRON.; SUN; DA. 1980; VOL. 25; NO 9; PP. 2013-2014; BIBL. 3 REF.Article

ACOUSTIC AXES FOR PURE SHEAR MODE PROPAGATION IN SAPPHIRE.WANUGA S; MIDFORT TA.1970; J. APPL. PHYS.; USA; 1970(11), VOL. 41, NUM. 0012, P. 5037 A 5038Miscellaneous

SILICON-ON-SAPPHIRE TECHNOLOGY PRODUCES HIGH-SPEED SINGLE-CHIP PROCESSOR.FORBES BE.1977; HEWLETT-PACKARD J.; U.S.A.; DA. 1977; VOL. 28; NO 8; PP. 2-8; BIBL. 1 REF.Article

TORSIONAL VIBRATIONS OF A SAPPHIRE ROD: A NUMERICAL DESCRIPTION.WILSON LO; GATTO MA.1977; J. ACOUST. SOC. AMER.; U.S.A.; DA. 1977; VOL. 61; NO 4; PP. 1004-1013; BIBL. 5 REF.Article

STABILISATION DE LA FREQUENCE DES GENERATEURS PAR DES RESONATEURS MECANIQUES A BASE DE MONOCRISTAUX DE SAPHIRBRAGINSKIJ VB; MITROFANOV VP.1978; VEST. MOSKOV. UNIV., 3; SUN; DA. 1978; NO 4; PP. 45-52; BIBL. 10 REF.Article

TECHNOLOGIE SOS: L'HEURE DE VERITELILEN H.1980; ELECTRON. APPL. INDUSTR.; FRA; DA. 1980; NO 282; PP. 22-24Article

A NEW ISOLATION TECHNIQUE FOR SOS/LSI'S-LOCAL BURIED OXIDE ISOLATION OF SOS (LOBOS).SAKAI Y; HORI R; DOTA K et al.1977; JAP. J. APPL. PHYS.; JAP.; DA. 1977; VOL. 16; SUPPL. 1; PP. 551-555; BIBL. 2 REF.; (CONF. SOLID STATE DEVICES. 8. PROC.; TOKYO; 1976)Conference Paper

THE RANDOM WALK OF A DRILLING LASER BEAMANTHONY TR.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 2; PP. 1170-1175; BIBL. 7 REF.Article

CUTTING SAPPHIRE WITH ANNULAR SAW BLADES.BUTTNER A.1977; INDUSTR. DIAM. REV.; G.B.; DA. 1977-02; PP. 41-43Article

DOUBLE-INJECTION PHENOMENA UNDER MAGNETIC FIELD IN SOS FILMS: A NEW GENERATION OF MAGNETOSENSITIVE MICRODEVICESAZAR MOHAGHEGH; CRISTOLOVEANU S; DE PONTCHARRA J et al.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 3; PP. 237-242; BIBL. 15 REF.Article

DEEP HOLE DRILLING OF SAPPHIRE BY RUBBY LASER IRRADIATION FROM EXIT SURFACEYASUNAGA N; TARUMI N; MINETA S et al.1980; BULL. JPN. SOC. PRECIS. ENG.; ISSN 0582-4206; JPN; DA. 1980; VOL. 14; NO 3; PP. 189-190Article

SUBTHRESHOLD CONDUCTION IN SILICON-ON-SAPPHIRE TRANSISTORSKOWSHIK V; DUMIN DJ.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 9; PP. 993-1002; BIBL. 34 REF.Article

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