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Results 1 to 25 of 2058

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POLISHING OF SAPPHIRE WITH COLLOIDAL SILICA.GUTSCHE HW; MOODY JW.1978; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1978; VOL. 125; NO 1; PP. 136-138; BIBL. 13 REF.Article

GENERATEUR DE VIBRATIONS ELECTRIQUES STABILISE PAR UN RESONATEUR MECANIQUE EN SAPHIR A 4,2 KKOCHUBEJ AD; MITROFANOV VP.1978; PRIBORY TEKH. EKSPER.; SUN; DA. 1978; NO 5; PP. 144-146; BIBL. 4 REF.Article

SAPPHIRES OF MONTANA = LES SAPHIRS DU MONTANAMAGGART HARLEY.1981; LAPIDARY J.; ISSN 0023-8457; USA; DA. 1981-10; VOL. 35; NO 7; PP. 1446-1452; ILL.Article

CORNISH SAPPHIRELEFEVRE CHRISTENSEN S.1979; GEMS MINER.; USA; DA. 1979; NO 502; PP. 46-59; (2 P.); 3 ILL.Article

SAPPHIRES EXPAND ELECTRONIC DEVICE APPLICATIONSMARUYAMA T; ISHIBITSU K; NOSAKA S et al.1978; J. ELECTRON. ENGNG; JPN; DA. 1978; NO 141; PP. 22-25Article

AN ANISOTROPY OF SAPPHIRE CRYSTALSNIKOLOVA EG; HRISTOVA KK.1979; C.R. ACAD. BULG. SCI.; BGR; DA. 1979; VOL. 32; NO 6; PP. 739-740; BIBL. 6 REF.Article

(1210)-ZONE FRACTURE ANISOTROPY OF SAPPHIREKRELL A; SCHULZE D.1979; PHYS. STATUS SOLIDI, A; DDR; DA. 1979; VOL. 52; NO 1; PP. K45-K48; BIBL. 6 REF.Article

Antireflection coating for sapphire with consideration of mechanical propertiesGÖDEKER, C; SCHULZ, U; KAISER, N et al.Surface & coatings technology. 2014, Vol 241, pp 59-63, issn 0257-8972, 5 p.Conference Paper

Strength of silicon, sapphire and glass in the subthreshold flaw regionJUNG, Yeon-Gil; PAJARES, Antonia; BANERJEE, Rajat et al.Acta materialia. 2004, Vol 52, Num 12, pp 3459-3466, issn 1359-6454, 8 p.Article

MEASUREMENTS OF RAMAN INTENSITIES AND PRESSURE DEPENDENCE OF PHONON FREQUENCIES IN SAPPHIREWATSON GH JR; DANIELS WB; WANG CS et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 2; PP. 956-958; BIBL. 18 REF.Article

MELANGE DE SIGNAUX UHF SUR UNE COUCHE SUPRACONDUCTRICE DE NITRURE DE NIOBIUMERU II; KRUT'KO AP; PESKOVATSKIJ SA et al.1980; RADIOTEKH. I ELEKTRON.; SUN; DA. 1980; VOL. 25; NO 9; PP. 2013-2014; BIBL. 3 REF.Article

ACOUSTIC AXES FOR PURE SHEAR MODE PROPAGATION IN SAPPHIRE.WANUGA S; MIDFORT TA.1970; J. APPL. PHYS.; USA; 1970(11), VOL. 41, NUM. 0012, P. 5037 A 5038Miscellaneous

SILICON-ON-SAPPHIRE TECHNOLOGY PRODUCES HIGH-SPEED SINGLE-CHIP PROCESSOR.FORBES BE.1977; HEWLETT-PACKARD J.; U.S.A.; DA. 1977; VOL. 28; NO 8; PP. 2-8; BIBL. 1 REF.Article

TORSIONAL VIBRATIONS OF A SAPPHIRE ROD: A NUMERICAL DESCRIPTION.WILSON LO; GATTO MA.1977; J. ACOUST. SOC. AMER.; U.S.A.; DA. 1977; VOL. 61; NO 4; PP. 1004-1013; BIBL. 5 REF.Article

STABILISATION DE LA FREQUENCE DES GENERATEURS PAR DES RESONATEURS MECANIQUES A BASE DE MONOCRISTAUX DE SAPHIRBRAGINSKIJ VB; MITROFANOV VP.1978; VEST. MOSKOV. UNIV., 3; SUN; DA. 1978; NO 4; PP. 45-52; BIBL. 10 REF.Article

TECHNOLOGIE SOS: L'HEURE DE VERITELILEN H.1980; ELECTRON. APPL. INDUSTR.; FRA; DA. 1980; NO 282; PP. 22-24Article

A NEW ISOLATION TECHNIQUE FOR SOS/LSI'S-LOCAL BURIED OXIDE ISOLATION OF SOS (LOBOS).SAKAI Y; HORI R; DOTA K et al.1977; JAP. J. APPL. PHYS.; JAP.; DA. 1977; VOL. 16; SUPPL. 1; PP. 551-555; BIBL. 2 REF.; (CONF. SOLID STATE DEVICES. 8. PROC.; TOKYO; 1976)Conference Paper

SUBTHRESHOLD CONDUCTION IN SILICON-ON-SAPPHIRE TRANSISTORSKOWSHIK V; DUMIN DJ.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 9; PP. 993-1002; BIBL. 34 REF.Article

MEMORY BEHAVIOUR IN A RADIATION ENVIRONMENTBRUCKER GJ; THURLOW L.1979; ELECTRON. ENGNG; GBR; DA. 1979; VOL. 51; NO 617; PP. 67-71; (3 P.)Article

FAULT-FREE SILICON AT THE SILICON/SAPPHIRE INTERFACEPONCE FA.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 4; PP. 371-373; BIBL. 9 REF.Article

SAPPHIRE SUBSTRATE MISORIENTATION AND SOS/MOS TRANSISTOR PERFORMANCE.WEITZEL CE; SMITH RT.1977; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1977; VOL. 124; NO 7; PP. 1080-1086; BIBL. 11 REF.Article

Gemological modification of local natural gemstones by ion beamsINTARASIRI, S; BOOTKUL, D; YU, L. D et al.Surface & coatings technology. 2009, Vol 203, Num 17-18, pp 2788-2792, issn 0257-8972, 5 p.Conference Paper

GEM MOUNTAIN SAPPHIRE MINESPENDLOVE EARL.1982; ROCK GEM; ISSN 0048-8453; USA; DA. 1982-05; VOL. 12; NO 5; PP. 52-55; ILL.Article

TRENDS IN SEMICONDUCTOR MATERIAL TECHNOLOGIES FOR VLSI AND VHSIC APPLICATIONSMING LIAW H.1982; SOLID STATE TECHNOL.; ISSN 0038-111X; USA; DA. 1982; VOL. 25; NO 7; PP. 65-73; BIBL. 43 REF.Article

Nitridation effect on sapphire surface polaritonsNOVIKOVA, N. N; VINOGRADOV, E. A; YAKOVLEV, V. A et al.Surface & coatings technology. 2013, Vol 227, pp 58-61, issn 0257-8972, 4 p.Conference Paper

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