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EPITAXIAL GROWTH OF CDTE BY A CLOSE-SPACED TECHNIQUESARAIE J; AKIYAMA M; TANAKA T et al.1972; JAP. J. APPL. PHYS.; JAP.; DA. 1972; VOL. 11; NO 11; PP. 1758-1759; BIBL. 3 REF.Serial Issue

DETAILED CHARACTERIZATION OF DEEP CENTERS IN CDTE: PHOTOIONIZATION AND THERMAL IONIZATION PROPERTIESTAKEBE T; SARAIE J; MATSUNAMI H et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 1; PP. 457-469; BIBL. 52 REF.Article

HYDROGENATED AMORPHOUS SILICON FILMS PREPARED BY AN ION-BEAM-SPUTTERING TECHNIQUEKOBAYASHI M; SARAIE J; MATSUNAMI H et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 9; PP. 696-697; BIBL. 19 REF.Article

INJECTION ELECTROLUMINESCENCE FROM CDTE P-N JUNCTIONS PREPARED BY LPEKITAGAWA M; SARAIE J; TANAKA T et al.1981; APPL. PHYS., A, SOLIDS SURF.; DEU; DA. 1981; VOL. 26; NO 3; PP. 151-156; BIBL. 17 REF.Article

STUDY OF THE SURFACE BARRIER OF THE METAL-N-CDTE CONTACT.TAKEBE T; SARAIE J; TANAKA T et al.1978; PHYS. STATUS SOLIDI, A; DDR; DA. 1978; VOL. 47; NO 1; PP. 123-130; ABS. FRA; BIBL. 18 REF.Article

EFFECT OF EXCESS COMPONENT ELEMENT DURING LPE ON ELECTRICAL PROPERTIES OF CDTESARAIE J; KITAGAWA M; TANAKA T et al.1979; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1979; VOL. 126; NO 12; PP. 2226-2231; BIBL. 39 REF.Article

PHOTOCONDUCTIVE PROPERTIES OF THE EVAPORATED CDTE-SINTERED CDS HETEROJUNCTIONSARAIE J; YAMAGIWA SI; MATSUNAMI H et al.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 9; PP. 845-849; BIBL. 11 REF.Article

LIQUID PHASE EPITAXIAL GROWTH OF CDTE IN THE CDTE-CDCL2 SYSTEM.SARAIE J; KITAGAWA M; ISHIDA M et al.1978; J. CRYST. GROWTH; NETHERL.; DA. 1978; VOL. 43; NO 1; PP. 13-16; BIBL. 14 REF.Article

PHOTOCAPACITANCE STUDIES OF THE C1-RELATED DEEP CENTER IN CDTETAKEBE T; ONO H; SARAIE J et al.1981; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1981; VOL. 37; NO 5; PP. 391-394; BIBL. 5 REF.Article

ELECTRICAL PROPERTIES OF CDTE:P HEAT-TREATED UNDER COMPONENT VAPOUR PRESSURESSARAIE J; SHINOHARA H; EDAMATSU H et al.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 62; NO 2; PP. 665-672; ABS. GER; BIBL. 25 REF.Article

PHOTOLUMINESCENCE AND RECOMBINATION CENTERS IN PHOSPHORUS-DOPED AND UNDOPED CDTE HEAT-TREATED UNDER COMPONENT VAPOUR PRESSURESSARAIE J; SHINOHARA H; EDAMATSU H et al.1980; J. LUMIN.; ISSN 0022-2313; NLD; DA. 1980; VOL. 21; NO 4; PP. 337-351; BIBL. 27 REF.Article

DLTS STUDIES OF DEEP LEVELS IN SEMICONDUCTING N-CDTE SINGLE CRYSTALSTAKEBE T; HIRATA T; SARAIE J et al.1982; JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS; ISSN 0022-3697; USA; DA. 1982; VOL. 43; NO 1; PP. 5-12; BIBL. 37 REF.Article

Photo-CVD of Al2O3 thin filmsSARAIE, J; SIN-FAT NGAN.Japanese journal of applied physics. 1990, Vol 29, Num 10, pp L1877-L1880, issn 0021-4922, 2Article

PHOTOCAPACITANCE STUDY OF DEEP LEVELS IN N-CDTE SINGLE CRYSTALSTAKEBE T; ONO H; SARAIE J et al.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 66; NO 2; PP. 725-736; ABS. FRE; BIBL. 7 REF.Article

PREPARATION AND PHOTOCONDUCTIVE PROPERTIES OF SINTERED FILMS OF CDS-CDTE MIXED CRYSTALS.SARAIE J; KATO H; YAMADA N et al.1977; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1977; VOL. 39; NO 1; PP. 331-336; ABS. ALLEM.; BIBL. 6 REF.Article

Improvement in the crystalline quality of ZnSe(111) films grown by molecular beam epitaxy using misoriented GaAs(111)A substratesMATSUMURA, N; MAEMURA, K; MORI, T et al.Japanese journal of applied physics. 1995, Vol 34, Num 9A, pp L1114-L1116, issn 0021-4922, 2Article

Li planar doping of ZnSe by molecular beam epitaxyMATSUMURA, N; YAMAWAKI, K; ICHIKAWA, S et al.Japanese journal of applied physics. 1995, Vol 34, Num 8A, pp 4118-4119, issn 0021-4922, 1Article

Band bending and interface state density in CdS thin-film MIS structuresSARAIE, J; FUJII, K; KITAO, Y et al.Solid-state electronics. 1986, Vol 29, Num 9, pp 994-995, issn 0038-1101Article

Heteroepitaxial growth ZnSe by a close-spaced technique: Ga incorporation and morphologyKITAGAWA, M; SHINOHARA, A; SARAIE, J et al.Journal of crystal growth. 1983, Vol 63, Num 2, pp 321-336, issn 0022-0248Article

Chemical vapor deposition of Al2O3 thin films under reduced pressuresSARAIE, J; KWON, J; YODOGAWA, Y et al.Journal of the Electrochemical Society. 1985, Vol 132, Num 4, pp 890-892, issn 0013-4651Article

Fabrication of ZnSe diodes with CdSe quantum-dot layers by molecular beam epitaxyMATSUMURA, N; ENDO, H; SARAIE, J et al.Physica status solidi. B. Basic research. 2002, Vol 229, Num 2, pp 1039-1042, issn 0370-1972Conference Paper

Photo-chemical vapor deposition of Al2O3 thin films with high quantum yieldFUKUSHIMA, Y; HIGASHINO, T; MATSUMURA, N et al.Japanese journal of applied physics. 1992, Vol 31, Num 3A, pp L261-L264, issn 0021-4922, 2Article

Low-temperature growth of 3C-SiC on Si substrate by chemical vapor deposition using hexamethyldisilane as a source materialTAKAHASHI, K; NISHINO, S; SARAIE, J et al.Journal of the Electrochemical Society. 1992, Vol 139, Num 12, pp 3565-3571, issn 0013-4651Article

Growth mechanism and defects in SiC prepared by sublimation methodNISHINO, S; HIGASHINO, T; TANAKA, T et al.Journal of crystal growth. 1995, Vol 147, Num 3-4, pp 339-342, issn 0022-0248Article

Effect of Al doping on low-temperature epitaxy of 3C-SiC/Si by chemical vapor deposition using hexamethyldisilane as a source materialTAKAHASHI, K; NISHINO, S; SARAIE, J et al.Applied physics letters. 1992, Vol 61, Num 17, pp 2081-2083, issn 0003-6951Article

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