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EXPERIMENTAL STUDY OF A CONTINUOUSLY PUMPED, ACTIVELY MODE-LOCKED DYE LASER.SCAVENNEC A.1977; OPT. COMMUNIC.; NETHERL.; DA. 1977; VOL. 20; NO 3; PP. 335-338; BIBL. 11 REF.Article

PRODUCTION D'IMPULSIONS LUMINEUSES RECURRENTES PAR COUPLAGE DES MODES D'UN LASER A GAZSCAVENNEC A.1972; AO-CNRS-7728; FR.; DA. 1972; PP. (102 P.); BIBL. 3 P. 1/2; (THESE DOCT. ING.; UNIV. PARIS-SUD; 1972)Thesis

MISMATCH EFFECTS IN SYNCHRONOUS PUMPING OF THE CONTINUOUSLY OPERATED MODE-LOCKED DYE LASER.SCAVENNEC A.1976; OPT. COMMUNIC.; NETHERL.; DA. 1976; VOL. 17; NO 1; PP. 14-17; BIBL. 6 REF.Article

DESIGN AND EVALUATION OF A PLANAR GAALAS-GAAS BIPOLAR TRANSISTORANKRI D; SCAVENNEC A.1980; ELECTRON. LETTERS; GBR; DA. 1980; VOL. 16; NO 1; PP. 41-42; BIBL. 8 REF.Article

1 GHZ LOW-NOISE HYBRID PREAMPLIFIER FOR OPTICAL DETECTIONMONTI O; SCAVENNEC A; LE MEN P et al.1980; ELECTROCOMPON. SCI. TECHNOL.; ISSN 0305-3091; GBR; DA. 1980; VOL. 6; NO 3-4; PP. 189-191; BIBL. 4 REF.Article

1 GHZ LOW-NOISE HYBRID PREAMPLIFIER FOR OPTICAL DETECTIONMONTI O; SCAVENNEC A; LE MEN P et al.1979; EUROPEAN HYBRID MICROELECTRONICS CONFERENCE. 2/1978/GHENT; NLD; PIJNACKER: DUTCH EFFICIENCY BUREAU; DA. 1979; PP. 325-331; BIBL. 3 REF.Conference Paper

Emetteurs et récepteurs optoélectroniques intégrés = Integrated optoelectronic transmitters and receiversBOULEY, J.-C; SCAVENNEC, A.Onde électrique. 1988, Vol 68, Num 3, pp 69-75, issn 0030-2430Article

UNE NOUVELLE REALISATION EN COMPOSANTS SEMICONDUCTEURS. LE TRANSISTOR BIPOLAIRE A HETEROJONCTION GAALAS-GAASANKRI D; BESOMBES C; COURBET C et al.1980; ECHO RECH.; ISSN 0012-9283; FRA; DA. 1980; NO 101; PP. 21-30; BIBL. 10 REF.Article

METROLOGIE DES PHENOMENES TRES RAPIDES (DOMAINE DES 1 A 100 PICOSECONDES).DELMARE C; GEX JP; DEBEAU J et al.1975; IN: ELECTRON. MES. COLLOQ. INT. COMMUN.; PARIS; 1975; PARIS; COM. ORGAN. COLLOQ. INT. ELECTRON. MES.; DA. 1975; PP. 232-247; ABS. ANGL.; BIBL. 12 REF.Conference Paper

HIGH-GAIN LOW-NOISE GAALAS-GAAS PHOTOTRANSISTORSSCAVENNEC A; ANKRI D; BESOMBES C et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 10; PP. 394-395; BIBL. 11 REF.Article

Double junction AllnAs/GaInAs multiquantum well avalanche photodiodesLE BELLEGO, Y; PRASEUTH, J. P; SCAVENNEC, A et al.Electronics Letters. 1991, Vol 27, Num 24, pp 2228-2230, issn 0013-5194Article

Investigation on base surface recombination in Self Passivated GaAlAs/GalnP/GaAs Heterojunction Bipolar TransistorBOURGUIGA, R; SIK, H; SCAVENNEC, A et al.EPJ. Applied physics (Print). 1998, Vol 4, Num 1, pp 27-29, issn 1286-0042Article

DIFFUSED EPITAXIAL GAALAS-GAAS HETEROJUNCTION BIPOLAR TRANSISTOR FOR HIGH-FREQUENCY OPERATIONANKRI D; SCAVENNEC A; BESOMBES C et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 9; PP. 816-818; BIBL. 14 REF.Article

Etude et caractérisation de matériaux semi-conducteurs (arséniure de gallium et phosphure d'indium dopé au fer), en vue de leurs applications à la détection de rayonnements ionisants = Semi-insulating photoconductor study for X rays detectionMoulin, Hélène; Scavennec, A.1989, 299 p.Thesis

METROLOGIE DES PHENOMENES TRES RAPIDES. DOMAINE DES 1 A 100 PICOSECONDES.DELMARE C; TRABAUD R; LEJEUNE G et al.1975; ONDE ELECTR.; FR.; DA. 1975; VOL. 55; NO 10; PP. 560-568; ABS. ANGL.; BIBL. 12 REF.Article

Effect of leakage current induced by B+H+ implantation in the isolation process for self passivated GaAlAs/GaInP/GaAs HBTBOURGUIGA, R; SIK, H; SCAVENNEC, A et al.EPJ. Applied physics (Print). 2002, Vol 19, Num 3, pp 195-199, issn 1286-0042, 5 p.Article

Caractéristiques électriques des barrières métal/AlInAs/GaInAs pour transistors à effet de champ AlInAs/GaInAs/InPFAYE, S; PRASEUTH, J. P; SCAVENNEC, A et al.Journal de physique 3, Applied physics, materials science, fluids, plasma and instrumentation. 1991, Vol 1, Num 7, pp 1289-1300Article

Reduction of recombination velocity on GaAs surface by Ga-S and As-S bond-related surface states from (NH4)2Sx treatmentSIK, H; FEURPRIER, Y; CARDINAUD, C et al.Journal of the Electrochemical Society. 1997, Vol 144, Num 6, pp 2106-2115, issn 0013-4651Article

Composants optoélectroniques: quelques développements récents = Optoelectronic devices: a few recent developmentsMESQUIDA, G; PESTIE, J.-P; PAPUCHON, M et al.Onde électrique. 1993, Vol 73, Num 6, pp 41-47, issn 0030-2430Article

Limitation des performances des photodétecteurs à avalanche GaAIAsSb par effet tunnel = Performance limitation by tunneling in GaAlAsSb avalanche photodetectorsORSAL, B; ALABEDRA, R; TAYEB BELATOUI et al.Annales des télécommunications. 1986, Vol 41, Num 1-2, pp 86-91, issn 0003-4347Article

Photodiode de type Métal-Semiconducteur-Métal (MSM) sur substrat d'InP = Metal-semiconductor-metal (MSM) photodiode on InP substrateTEMMAR, A; PRASEUTH, J. P; PALMIER, J. F et al.Journal de physique. III (Print). 1996, Vol 6, Num 8, pp 1059-1074, issn 1155-4320, 15 p.Article

Photodétecteurs pour transmissions par fibre optique à 1,3 μm-1,55 μm: état de l'art = Photodetectors for optical fiber transmission on 1.3-1.55 μm: state ― of the artMOTTET, S; VIALLET, J. E; BOISROBERT, C et al.Annales des télécommunications. 1988, Vol 43, Num 7-8, pp 365-377, issn 0003-4347Article

UVCVD dielectric films for InP-based optoelectronic devicesPOST, G; LE BELLEGO, Y; COURANT, J. L et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1993, Vol 20, Num 1-2, pp 134-140, issn 0921-5107Conference Paper

Monolithic photoreceiver integrating GaInAs PIN/JFET with diffused junctionsRENAUD, J. C; N'GUYEN, L; ALLOVON, M et al.Electronics Letters. 1987, Vol 23, Num 20, pp 1055-1056, issn 0013-5194Article

Monolithic integration of an InP based polarization diversity heterodyne photoreceiver with electrooptic adjustabilityGHIRARDI, F; BRUNO, B; MERSALI, B et al.Journal of lightwave technology. 1995, Vol 13, Num 7, pp 1536-1549, issn 0733-8724Article

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