au.\*:("SCHAFMEISTER, P")
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Si accumulation at the surface upon re-evaporation of Si-doped GaAs(100)REUTER, D; SCHAFMEISTER, P; KAILUWEIT, P et al.Semiconductor science and technology. 2003, Vol 18, Num 2, pp 115-117, issn 0268-1242, 3 p.Article
Growth of InAs quantum dots on focussed ion beam implanted GaAs(100)REUTER, D; SCHAFMEISTER, P; KOCH, J et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 88, Num 2-3, pp 230-233, issn 0921-5107Conference Paper