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APPLICATION DU PROCEDE SUBILO A LA REALISATION DE DISPOSITIFS SCHOTTKY.DE BREBISSON M; MOUSSIE M.1977; DGRST-7670650; FR.; DA. 1977; PP. 1-38; (RAPP. FINAL, ACTION CONCERTEE: COMPOSANTS CIRCUITS MICROMINIATURISES)Report

THE MODELLING OF EDGE CURRENT IN SCHOTTKY BARRIER DEVICES.AL BAIDHAWI K; HOWES MJ; MORGAN DV et al.1978; J. PHYS. D; G.B.; DA. 1978; VOL. 11; NO 8; PP. 1203-1210; BIBL. 8 REF.Article

THE FT CHARACTERISTICS OF EPITAXIAL NPN TRANSISTORS IN UPWARD OPERATIONKWAN KW; BRUNNSCHWEILER A; ROULSTON DJ et al.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 4; PP. 305-312; BIBL. 12 REF.Article

CHARACTERISTICS OF MODULATION-DOPED ALXGA1-XAL/GAAS FIELD-EFFECT TRANSISTORS: EFFECT OF DONOR-ELECTRON SEPARATIONDRUMMOND TJ; FISCHER R; SU SL et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 3; PP. 262-264; BIBL. 11 REF.Article

RESPONSE TIMES FOR A STORAGE ELECTROOPTIC EFFECT IN LIQUID CRYSTALSFRUNZA S; BEICA T; MOLDOVAN R et al.1983; OPTICS COMMUNICATIONS; ISSN 0030-4018; NLD; DA. 1983; VOL. 44; NO 5; PP. 330-332; BIBL. 5 REF.Article

CHARACTERISTICS OF SCHOTTKY DIODES AT 10.6 MU MINOUE N; HARAKAWA K; YASUOKA Y et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 3; PP. 268-269; BIBL. 9 REF.Article

SCHOTTKEY RECTIFIERS ON SILICON USING HIGH BARRIERSSTOLT L; BOHLIN K; TOVE PA et al.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 4; PP. 295-297; BIBL. 6 REF.Article

AN ACCURATE SCALAR POTENTIAL FINITE ELEMENT METHOD FOR LINEAR, TWO-DIMENSIONAL MAGNETOSTATICS PROBLEMSMCDANIEL TW; FERNANDEZ RB; ROOT RR et al.1983; INTERNATIONAL JOURNAL FOR NUMERICAL METHODS IN ENGINEERING; ISSN 0029-5981; GBR; DA. 1983; VOL. 19; NO 5; PP. 725-737; BIBL. 10 REF.Article

SCHOTTKY BARRIER TYPE DIODE WITH AN ELECTROCHEMICALLY PREPARED COPOLYMER HAVING PYRROLE AND N-METHYLPYRROLE UNITSKOEZUKA H; ETOH S.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 5; PP. 2511-2516; BIBL. 22 REF.Article

PIEZOELECTRIC EFFECT IN AU-CDS SCHOTTKY BARRIER.KUSAKA M; KANAKURA M; OKAZAKI S et al.1977; SURF. SCI.; NETHERL.; DA. 1977; VOL. 64; NO 2; PP. 793-796; BIBL. 7 REF.Article

GENERALISED THERMIONIC-EMISSION THEORY OF CARRIER TRANSPORT THROUGH THIN BASE OF BIPOLAR TRANSISTORPOPOVIC RS.1982; IEE PROCEEDINGS. PART I. SOLID-STATE AND ELECTRON DEVICES; ISSN 0143-7100; GBR; DA. 1982; VOL. 129; NO 3; PP. 111-115; BIBL. 13 REF.Article

CONTACTLESS MEASUREMENT OF SCHOTTKY BARRIER HEIGHTS USING SECONDARY ELECTRONSHUANG HCW; HO PS.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 5; PP. 482-484; BIBL. 10 REF.Article

DETECTEURS A BARRIERE DE SURFACE EN AU-SI A SENSIBILITE AMELIOREE DANS L'ULTRAVIOLET PROCHEGATSENKO LS; GOLOUNER TM; GROSHKOVA GN et al.1976; PRIBORY TEKH. EKSPER.; S.S.S.R.; DA. 1976; NO 5; PP. 272-273; BIBL. 6 REF.Article

MECANISME DE LA SENSIBILITE AUX CONTRAINTES DE DIODES A BARRIERES DE SCHOTTKY EN ARSENIURE DE GALLIUMVYATKIN AP; MAKSIMOVA NK; FILONOV NG et al.1978; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1978; VOL. 12; NO 7; PP. 1384-1387; BIBL. 15 REF.Article

THE METAL-OVERLAP LATERALLY-DIFFUSED (MOLD) SCHOTTKY DIODE.RUSU A; BULUCEA C; POSTOLACHE C et al.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 6; PP. 499-506; H.T. 1; BIBL. 29 REF.Article

REDISTRIBUTION OF IMPLANTED PHOSPHORUS AFTER PLATINUM SILICIDE FORMATION AND THE CHARACTERISTICS OF SCHOTTKY BARRIER DIODESKIKUCHI A; SUGAKI S.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 5; PP. 3690-3693; BIBL. 5 REF.Article

A MODIFIED FORWARD I-U PLOT FOR SCHOTTKY DIODES WITH HIGH SERIES RESISTANCETRANCHOT.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 66; NO 1; PP. K43-K45; BIBL. 2 REF.Article

CURRENT-TUNED GAAS SCHOTTKY-BARRIER IMPATT DIODES FOR 60-96 GHZ OPERATIONSCHAWARZ RI; BONEK E.1978; ELECTRON. LETTERS; GBR; DA. 1978; VOL. 14; NO 25; PP. 812-814; BIBL. 10 REF.Article

INTERDIFFUSION AND SCHOTTKY-BARRIER-HEIGHT VARIATIONS IN AU-W(TI)/N-GAAS CONTACTS.DAY HM; CHRISTOU A; MACPHERSON AC et al.1977; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1977; VOL. 14; NO 4; PP. 939-942; BIBL. 10 REF.Article

GENERALIZED THEORY OF CONDUCTION IN SCHOTTKY BARRIERSSIMMONS JG; TAYLOR GW.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 7; PP. 705-709; BIBL. 3 REF.Article

TRANSPORT THEORY OF HIGH-FREQUENCY RECTIFICATION IN SCHOTTKY BARRIERSTSANG DW; SCHWARZ SE.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 5; PP. 3459-3471; BIBL. 40 REF.Article

PROPRIETES DE POLARISATION DES DIODES DE CDSNP2MEDVEDKIN GA; OVEZOV K; RUD YU V et al.1976; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1976; VOL. 10; NO 11; PP. 2081-2085; BIBL. 10 REF.Article

SI-SCHOTTKY-DIODE KD 514A AUS DER SOWJETUNION.BIELEFELDT R.1976; RADIO FERNSEHEN ELEKTRON.; DTSCH.; DA. 1976; VOL. 25; NO 15; PP. 493Article

A NEW UNIFORM-FIELD SCHOTTKY-BARRIER STRUCTURE.RUSU A; BULUCEA C; POSTOLACHE C et al.1976; REV. ROUMAINE PHYS.; ROUMAN.; DA. 1976; VOL. 21; NO 5; PP. 524-528; ABS. FR.; BIBL. 5 REF.Article

ANALYSIS OF NON-UNIFORMLY DOPED MPN SILICON SCHOTTKY BARRIER SOLAR CELLROY SB; SINHA TK; DAW AN et al.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 4; PP. 353-359; BIBL. 14 REF.Article

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