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THE FT CHARACTERISTICS OF EPITAXIAL NPN TRANSISTORS IN UPWARD OPERATIONKWAN KW; BRUNNSCHWEILER A; ROULSTON DJ et al.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 4; PP. 305-312; BIBL. 12 REF.Article

CHARACTERISTICS OF MODULATION-DOPED ALXGA1-XAL/GAAS FIELD-EFFECT TRANSISTORS: EFFECT OF DONOR-ELECTRON SEPARATIONDRUMMOND TJ; FISCHER R; SU SL et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 3; PP. 262-264; BIBL. 11 REF.Article

RESPONSE TIMES FOR A STORAGE ELECTROOPTIC EFFECT IN LIQUID CRYSTALSFRUNZA S; BEICA T; MOLDOVAN R et al.1983; OPTICS COMMUNICATIONS; ISSN 0030-4018; NLD; DA. 1983; VOL. 44; NO 5; PP. 330-332; BIBL. 5 REF.Article

CHARACTERISTICS OF SCHOTTKY DIODES AT 10.6 MU MINOUE N; HARAKAWA K; YASUOKA Y et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 3; PP. 268-269; BIBL. 9 REF.Article

SCHOTTKEY RECTIFIERS ON SILICON USING HIGH BARRIERSSTOLT L; BOHLIN K; TOVE PA et al.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 4; PP. 295-297; BIBL. 6 REF.Article

SCHOTTKY BARRIER TYPE DIODE WITH AN ELECTROCHEMICALLY PREPARED COPOLYMER HAVING PYRROLE AND N-METHYLPYRROLE UNITSKOEZUKA H; ETOH S.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 5; PP. 2511-2516; BIBL. 22 REF.Article

SI-SCHOTTKY-DIODE KD 514A AUS DER SOWJETUNION.BIELEFELDT R.1976; RADIO FERNSEHEN ELEKTRON.; DTSCH.; DA. 1976; VOL. 25; NO 15; PP. 493Article

A NEW UNIFORM-FIELD SCHOTTKY-BARRIER STRUCTURE.RUSU A; BULUCEA C; POSTOLACHE C et al.1976; REV. ROUMAINE PHYS.; ROUMAN.; DA. 1976; VOL. 21; NO 5; PP. 524-528; ABS. FR.; BIBL. 5 REF.Article

INFLUENCE DE LA RESISTANCE SERIE D'UNE DIODE SCHOTTKY SUR SA CAPACITE EFFECTIVEKONSTANTINOV OV; MEZRIN OA.1983; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1983; VOL. 17; NO 2; PP. 305-311; BIBL. 3 REF.Article

BASES PHYSIQUES DE LA FIABILITE DES DIODES UHF A BARRIERE DE SCHOTTKY (ARTICLE DE SYNTHESE)RADZIEVSKIJ IA.1978; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1978; NO 27; PP. 89-93; BIBL. 1 P. 1/2Article

QUELQUES QUESTIONS DE LA THEORIE DES DIODES A BARRIERE DE SCHOTTKYSHEKA DI.1978; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1978; NO 27; PP. 15-21; BIBL. 15 REF.Article

DETECTEURS A DIODES A BARRIERE DE SCHOTTKY POUR LA GAMME DES ONDES SUBMILLIMETRIQUESAVERIN SV; POPOV VA.1977; RADIOTEKH. I ELEKTRON.; S.S.S.R.; DA. 1977; VOL. 22; NO 5; PP. 1057-1061; BIBL. 9 REF.Article

FINITE ELEMENT ANALYSIS OF SKIN EFFECT RESISTANCE IN SUBMILLIMETER WAVE SCHOTTKY BARRIER DIODESCAMPBELL JS; WRIXON GT.1982; IEEE TRANS. MICROWAVE THEORY TECH.; ISSN 0018-9480; USA; DA. 1982; VOL. 30; NO 5; PP. 744-750; BIBL. 11 REF.Article

LOW BREAKDOWN VOLTAGE SCHOTTKY DIODE AS VOLTAGE REGULATORPOPOVIC RS; MLADENOVIC DA.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 6; PP. 214-215; BIBL. 5 REF.Article

ANOMALIES THERMIQUES DES DIODES A BARRIERE DE SCHOTTKY NI-SI-NASHMONTAS S; OLEKAS A.1980; LITOV. FIZ. SB.; ISSN 0024-2969; SUN; DA. 1980; VOL. 20; NO 2; PP. 39-46; ABS. LIT/ENG; BIBL. 16 REF.Article

PLANARIZED SOLID-STATE EPITAXIAL GROWTH OF SI AND ITS EFFECT ON SCHOTTKY BARRIER DIODES.REITH TM; SULLIVAN MJ.1978; APPL. PHYS. LETTERS; U.S.A.; DA. 1978; VOL. 32; NO 3; PP. 177-179; BIBL. 16 REF.Article

MESURE DES PARAMETRES DES DIODES DE SCHOTTKY EN UTILISANT UNE CALCULATRICE ELECTRONIQUEVETROV AP.1978; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1978; NO 27; PP. 84-88; BIBL. 20 REF.Article

SUR LE PROBLEME DU PERFECTIONNEMENT DES DISPOSITIFS A BARRIERE DE SCHOTTKY A BASE D'ETUDES TECHNIQUES DE BREVETSLEPESHKINA MG.1978; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1978; NO 27; PP. 94-99; BIBL. 5 REF.Article

A BIPOLAR 16K ROM UTILIZING SCHOTTKY DIODE CELLS.GUNN JF; LYNES DJ; PRITCHETT RL et al.1977; COMPUTER; U.S.A.; DA. 1977; VOL. 10; NO 7; PP. 14-17Article

IMPROVED WHISKER POINTING TECHNIQUE FOR MICRON-SIZE DIODE CONTACTMATTAUCH RJ; GREEN G.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 3; PP. 143-144; BIBL. 5 REF.Article

MEASUREMENT OF RICHARDSON CONSTANT OF GAAS SCHOTTKY BARRIERSSRIVASTAVA AK; ARORA BM; GUHA S et al.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 2; PP. 185-191; BIBL. 23 REF.Article

A.C. ADMITTANCE STUDIES OF SCHOTTKY DIODES USING A VECTOR-ANALYZER-SYSTEMENGEMANN J.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 5; PP. 467-474; BIBL. 7 REF.Article

COMPUTER ANALYSIS OF MICROWAVE AND MILLIMETER-WAVE MIXERSSIEGEL PH.1980; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; USA; DA. 1980; VOL. 28; NO 3; PP. 275-276; BIBL. 7 REF.Article

MELANGEURS DE LA GAMME DES ONDES MILLIMETRIQUES AVEC UN POMPAGE SUB-HARMONIQUEZABYSHNYJ AI; STEPANOV KG; KHAPIN YU B et al.1980; IZVEST. VYSSH. UCHEBN. ZAVED., RADIOFIZ.; SUN; DA. 1980; VOL. 23; NO 4; PP. 419-423; ABS. ENG; BIBL. 9 REF.Article

SHOT NOISE IN SCHOTTKY-BARRIER DIODES AS DIFFUSION NOISE.VAN DER ZIEL A.1978; PHYSICA B+C; PAYS-BAS; DA. 1978; VOL. 94; NO 3; PP. 357-358; BIBL. 2 REF.Article

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