au.\*:("SCHRIMPF, Ronald D")
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Depletion-all-around operation of the SOI four-gate transistorAKARVARDAR, Kerem; CRISTOLOVEANU, Sorin; GENTIL, Pierre et al.I.E.E.E. transactions on electron devices. 2007, Vol 54, Num 2, pp 323-331, issn 0018-9383, 9 p.Article
Total-ionizing-dose effects and reliability of carbon nanotube FET devicesCHER XUAN ZHANG; EN XIA ZHANG; FLEETWOOD, Daniel M et al.Microelectronics and reliability. 2014, Vol 54, Num 11, pp 2355-2359, issn 0026-2714, 5 p.Article
The impact of device width on the variability of post-irradiation leakage currents in 90 and 65 nm CMOS technologiesREZZAK, Nadia; MAILLARD, Pierre; SCHRIMPF, Ronald D et al.Microelectronics and reliability. 2012, Vol 52, Num 11, pp 2521-2526, issn 0026-2714, 6 p.Article
Assessing Alpha Particle-Induced Single Event Transient Vulnerability in a 90-nm CMOS TechnologyGADLAGE, Matthew J; SCHRIMPF, Ronald D; NARASIMHAM, Balaji et al.IEEE electron device letters. 2008, Vol 29, Num 6, pp 638-640, issn 0741-3106, 3 p.Article
Test structures for analyzing proton radiation effects in bipolar technologiesBARNABY, Hugh J; SCHRIMPF, Ronald D; GALLOWAY, Kenneth F et al.IEEE transactions on semiconductor manufacturing. 2003, Vol 16, Num 2, pp 253-258, issn 0894-6507, 6 p.Conference Paper
An efficient technique to select logic nodes for single event transient pulse-width reductionMAHATME, Nihaar N; CHATTERJEE, Indranil; PATKI, Akash et al.Microelectronics and reliability. 2013, Vol 53, Num 1, pp 114-117, issn 0026-2714, 4 p.Article
Degradation in InAs―AlSb HEMTs Under Hot-Carrier StressDASGUPTA, Sandeepan; XIAO SHEN; SCHRIMPF, Ronald D et al.I.E.E.E. transactions on electron devices. 2011, Vol 58, Num 5, pp 1499-1507, issn 0018-9383, 9 p.Article