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OHMIC CONTACTS TO N-GAAS USING LOW-TEMPERATURE ANNEALWERTHEN JG; SCIFRES DR.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 2; PP. 1127-1129; BIBL. 12 REF.Article

INTEGRATED OPTICAL DEVICES FABRICATED BY MBEBURNHAM RD; SCIFRES DR.1979; PROGR. CRYST. GROWTH CHARACTER.; GBR; DA. 1979; VOL. 2; NO 1-2; PP. 95-113; BIBL. 59 REF.Article

SEMICONDUCTOR LASER WITH INTEGRAL LIGHT INTENSITY DETECTORSCIFRES DR; STUTIUS W.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 35; NO 1; PP. 16-18; BIBL. 6 REF.Article

ETCHED BURIED HETEROSTRUCTURE GAAS/GAALAS INJECTION LASERS.BURNHAM RD; SCIFRES DR.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 27; NO 9; PP. 510-511; BIBL. 3 REF.Article

PULSED UV LASER FOR FLUORESCENCE DECAY MEASUREMENTS.SCIFRES DR; BURNHAM RD.1975; J. LUMINESC.; NETHERL.; DA. 1975; VOL. 10; NO 1; PP. 69-71; BIBL. 5 REF.Article

REACTIVE OUTDIFFUSION OF CONTAMINANTS FROM (ALGA) AS LASER FACETSTIHANYI P; SCIFRES DR; BAUER RS et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 4; PP. 313-315; BIBL. 9 REF.Article

LONGITUDINAL MODE SPECTRA OF DIODE LASERSSTREIFER W; SCIFRES DR; BURNHAM RD et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 4; PP. 305-307; BIBL. 21 REF.Article

SPONTANEOUS EMISSION FACTOR OF NARROW-TRIPE GAIN-GUIDED DIODE LASERSSTREIFER W; SCIFRES DR; BURNHAM RD et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 24; PP. 933-934; BIBL. 10 REF.Article

ABOVE-THRESHOLD ANALYSIS OF DOUBLE-HETEROSTRUCTURE DIODE LASERS WITH LATERALLY TAPERED ACTIVE REGIONSSTREIFER W; SCIFRES DR; BURNHAM RD et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 10; PP. 877-879; BIBL. 17 REF.Article

EXPERIMENTAL AND ANALYTIC STUDIES OF COUPLED MULTIPLE STRIPE DIODE LASERSSCIFRES DR; STREIFER W; BURNHAM RD et al.1979; I.E.E.E. J. QUANTUM ELECTRON.; USA; DA. 1979; VOL. 15; NO 9; PP. 917-922; BIBL. 15 REF.Article

ANALYSIS OF GAIN-INDUCED WAVEGUIDING IN STRIPE GEOMETRY DIODE LASERSSTREIFER W; SCIFRES DR; BURNHAM RD et al.1978; I.E.E.E. J. QUANTUM ELECTRON.; USA; DA. 1978; VOL. 14; NO 6; PP. 418-427; BIBL. 17 REF.Article

COUPLED WAVE ANALYSIS OF DFB AND DBR LASERS.STREIFER W; SCIFRES DR; BURNHAM RD et al.1977; I.E.E.E. J. QUANTUM ELECTRON.; U.S.A.; DA. 1977; VOL. 13; NO 4 PART. 2; PP. 134-141; BIBL. 16 REF.Article

INTEGRATED INTERFEROMETRIC REFLECTOR.STREIFER W; SCIFRES DR; BURNHAM RD et al.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 30; NO 10; PP. 521-523; BIBL. 2 REF.Article

MODAL ANALYSIS OF SEPARATE-CONFINEMENT HETEROJUNCTION LASERS WITH INHOMOGENEOUS CLADDING LAYERSSTREIFER W; BURNHAM RD; SCIFRES DR et al.1983; OPTICS LETTERS; ISSN 0146-9592; USA; DA. 1983; VOL. 8; NO 5; PP. 283-285; BIBL. 14 REF.Article

CONTINUOUS WAVE HIGH-POWER, HIGH-TEMPERATURE SEMI-CONDUCTOR LASER PHASE-LAKED ARRAYSSCIFRES DR; BURNHAM RD; STREIFER W et al.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 11; PP. 1030-1032; BIBL. 26 REF.Article

LOW THRESHOLD, HIGH EFFICIENCY GA1-XALXAS SINGLE QUANTUM WELL VISIBLE DIODE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITIONBURNHAM RD; SCIFRES DR; STREIFER W et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 3; PP. 228-230; BIBL. 16 REF.Article

ANALYSIS OF SPONTANEOUS EMISSION EFFECTS ON SPECTRA AND L VS I CHARACTERISTICS OF DIODE LASERSSTREIFER W; SCIFRES DR; BURNHAM RD et al.1982; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 5; PART. 2; PP. 282-284; BIBL. 20 REF.Article

BRANCHING WAVEGUIDE COUPLER IN A GAAS/GAALAS INJECTION LASER.SCIFRES DR; BURNHAM RD; STREIFER W et al.1978; APPL. PHYS. LETTERS; U.S.A.; DA. 1978; VOL. 32; NO 10; PP. 658-661; BIBL. 8 REF.Article

COUPLING COEFFICIENTS AND PROPAGATION CONSTANTS IN GUIDED WAVE DISTRIBUTED-FEEDBACK LASERS.STREIFER W; BURNHAM RD; SCIFRES DR et al.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 2; PP. 946-948; BIBL. 7 REF.Article

VISIBLE CW SINGLE QUANTUM WELL (ALGA) AS DIODE LASERSLINDSTROM C; BURNHAM RD; SCIFRES DR et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 2; PP. 134-136; BIBL. 11 REF.Article

FAR-FIELD RADIATION PATTERNS OF MULTIPLE QUANTUM WELL LASERS GROWN BY MO-CVDHALIDO D; LINDSTROEM C; SCIFRES DR et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 18; PP. 765-767; BIBL. 12 REF.Article

ANALYSIS OF DIODE LASER PROPERTIESSTREIFER W; SCIFRES DR; BURNHAM RD et al.1982; IEEE JOURNAL OF QUANTUM ELECTRONICS; ISSN 0018-9197; USA; DA. 1982; VOL. 18; NO 11; PP. 1918-1929; BIBL. 19 REF.Article

PROPERTIES OF MO-CVD-GROWN GAAS/GAALAS LASERS AS A FUNCTION OF STRIPEWIDTHSCIFRES DR; STREIFER W; BURHAM RD et al.1981; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1981; VOL. 17; NO 12; PART. 1; PP. 2310-2316; BIBL. 21 REF.Article

OPTICAL ANALYSIS OF MULTIPLE-QUANTUM-WELL LASERSSTREIFER W; SCIFRES DR; BURNHAM RD et al.1979; APPL. OPT.; USA; DA. 1979; VOL. 18; NO 21; PP. 3547-3548; BIBL. 7 REF.Article

PHASE-LOCKED SEMICONDUCTOR LASER ARRAY.SCIFRES DR; BURNHAM RD; STREIFER W et al.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 12; PP. 1015-1017; BIBL. 12 REF.Article

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