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QUENCHING OF LUMINESCENCE BY NON-RADIATIVE TUNNELINGSEARLE TM.1982; PHILOSOPHICAL MAGAZINE. B. ELECTRONIC, OPTICAL AND MAGNETIC PROPERTIES; ISSN 0141-8637; GBR; DA. 1982; VOL. 46; NO 2; PP. 163-175; BIBL. 13 REF.Article

POWER-LAW ASYMPTOTIC MASS DISTRIBUTIONS FOR SYSTEMS OF ACCRETING OR FRAGMENTING BODIESBISHOP JEL; SEARLE TM.1983; MONTHLY NOTICES OF THE ROYAL ASTRONOMICAL SOCIETY; ISSN 0035-8711; GBR; DA. 1983; VOL. 203; NO 3; PP. 987-1009; BIBL. 32 REF.Article

PHOTOLUMINESCENCE IN CHALCOGENIDE CRYSTALS SHOWING SMALL POLARON CONDUCTION; ORTHORHOMBIC SULPHUR AND AS4S4.STREET RA; AUSTIN IG; SEARLE TM et al.1975; J. PHYS. C; G.B.; DA. 1975; VOL. 8; NO 8; PP. 1293-1300; BIBL. 17 REF.Article

ABSORPTION AND ELECTRO-ABSORPTION IN SINGLE-CRYSTAL AS2SE3 NEAR THE FUNDAMENTAL EDGE.SUSSMANN RS; AUSTIN IG; SEARLE TM et al.1975; J. PHYS. C; G.B.; DA. 1975; VOL. 8; NO 23; PP. L564-L568; BIBL. 20 REF.Article

EVIDENCE FROM PHOTOLUMINESCENCE STUDIES FOR A LOW-ENERGY ABSORPTION TAIL IN CHALCOGENIDE GLASSES AND CRYSTALS.STREET RA; SEARLE TM; AUSTIN IG et al.1975; PHILOS. MAG.; G.B.; DA. 1975; VOL. 32; NO 2; PP. 431-439; BIBL. 15 REF.Article

THE EXCITONIC GAPS AND URBACH TAIL IN CRYSTALLINE AS2SE3 ABSORPTION AND ELECTROABSORPTION STUDIESSUSSMANN RS; SEARLE TM; AUSTIN IG et al.1981; PHILOSOPHICAL MAGAZINE. B. ELECTRONIC, OPTICAL AND MAGNETIC PROPERTIES; ISSN 0141-8637; GBR; DA. 1981; VOL. 44; NO 6; PP. 665-683; BIBL. 32 REF.Article

PHOTOLUMINESCENCE IN PURE AND DOPED AMORPHOUS SILICON.NASHASHIBI TS; AUSTIN IG; SEARLE TM et al.1977; PHILOS. MAG.; G.B.; DA. 1977; VOL. 35; NO 3; PP. 831-835; BIBL. 8 REF.Article

ON THE ROLE OF THE DANGLING BOND AS A RADIATIVE CENTRE IN A-SI:HDEPINNA SP; CAVENETT BC; AUSTIN IG et al.1982; SOLID STATE COMMUNICATIONS; ISSN 0038-1098; USA; DA. 1982; VOL. 41; NO 3; PP. 263-267; BIBL. 11 REF.Article

PHOTOLUMINESCENCE IN SINGLE-CRYSTAL CHALCOGENIDES IN THE SYSTEM AS2SE3-XSX.STREET RA; AUSTIN IG; SEARLE TM et al.1974; J. PHYS. C; G.B.; DA. 1974; VOL. 7; NO 22; PP. 4185-4200; BIBL. 34 REF.Article

LOW ENERGY EXCITATION OF PHOTOLUMINESCENCE IN A-SI:H: TEMPERATURE AND INTENSITY EFFECTSBHAT PK; SEARLE TM; AUSTIN IG et al.1983; SOLID STATE COMMUNICATIONS; ISSN 0038-1098; USA; DA. 1983; VOL. 45; NO 6; PP. 481-485; BIBL. 13 REF.Article

TEMPERATURE DEPENDENCE OF THE ODMR SIGNALS IN ASI:H; ROOM TEMPERATURE ODMRDEPINNA SP; CAVENETT BC; SEARLE TM et al.1982; SOLID STATE COMMUNICATIONS; ISSN 0038-1098; USA; DA. 1982; VOL. 43; NO 2; PP. 79-84; BIBL. 9 REF.Article

CHARACTERIZATION OF RADIATIVE RECOMBINATION IN AMORPHOUS SILICON BY OPTICALLY DETECTED MAGNETIC RESONANCE. IIDEPINNA S; CAVENETT BC; SEARLE TM et al.1982; PHILOSOPHICAL MAGAZINE. B. ELECTRONIC, OPTICAL AND MAGNETIC PROPERTIES; ISSN 0141-8637; GBR; DA. 1982; VOL. 46; NO 5; PP. 501-513; BIBL. 8 REF.Article

RADIATIVE AND NON-RADIATIVE TUNNELLING IN GLOW-DISCHARGE AND SPUTTERED AMORPHOUS SILICONSEARLE TM; NASHASHIBI TS; AUSTIN IG et al.1979; PHILOS. MAG., B; GBR; DA. 1979; VOL. 39; NO 5; PP. 389-403; BIBL. 20 REF.Article

PHOTOLUMINESCENCE AND LIFETIME STUDIES ON PLASMA DISCHARGE A-SIAUSTIN IG; NASHASHIBI TS; SEARLE TM et al.1979; J. NON-CRYST. SOLIDS; NLD; DA. 1979; VOL. 32; NO 1-3; PP. 373-391; BIBL. 32 REF.Article

CHARACTERIZATION OF RADIATIVE RECOMBINATION IN AMORPHOUS SILICON BY OPTICALLY DETECTED MAGNETIC RESONANCE. IDEPINNA S; CAVENETT BC; AUSTIN IG et al.1982; PHILOSOPHICAL MAGAZINE. B. ELECTRONIC, OPTICAL AND MAGNETIC PROPERTIES; ISSN 0141-8637; GBR; DA. 1982; VOL. 46; NO 5; PP. 473-500; BIBL. 2 P.Article

PHOTOENHANCED ELECTROLUMINESCENCE IN AMORPHOUS SILICON P-I-N JUNCTIONSNASHASHIBI TS; SEARLE TM; AUSTIN IG et al.1982; PHILOS. MAG., B; ISSN 0141-8637; GBR; DA. 1982; VOL. 45; NO 6; PP. 573-582; BIBL. 11 REF.Article

ELECTROLUMINESCENCE IN AMORPHOUS SILICON P-I-N JUNCTIONSNASHASHIBI TS; AUSTIN IG; SEARLE TM et al.1982; PHILOS. MAG., B; ISSN 0141-8637; GBR; DA. 1982; VOL. 45; NO 6; PP. 553-571; BIBL. 17 REF.Article

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