BLOOD GAS FACTOR IN THE ELECTROMETRIC PO₂ MEASUREMENTOKUDA T; SEKIGAWA T; UEYAMA H et al.1974; WAKAYAMA MED. REP.; JAP.; DA. 1974; VOL. 16; NO 3-4; PP. 47-52; BIBL. 8 REF.Article

DSA MOS TRANSITOR AND ITS INTEGRATED CIRCUIT.HAYASHI Y; SEKIGAWA T; TARUI Y et al.1977; JAP. J. APPL. PHYS.; JAP.; DA. 1977; VOL. 16; SUPPL. 1; PP. 163-166; (CONF. SOLID STATE DEVICES. 8. PROC.; TOKYO; 1976)Conference Paper

TRANSISTOR A AVALANCHE A GRILLE ISOLEEHAYASHI Y; SEKIGAWA T; TARUI Y et al.1976; BULL. ELECTROTECH. LAB.; JAP.; DA. 1976; VOL. 40; NO 4-5; PP. 323-327; ABS. ANGL.; BIBL. 2 REF.Article

An effect of semiconductor surface shape on gate breakdown voltage of a VMOS transistorSEKIGAWA, T; HAYASI, Y.Solid-state electronics. 1983, Vol 26, Num 9, pp 925-927, issn 0038-1101Article

UN CAS CHEZ L'ENFANT DE PARALYSIE DE LANDRY SAUVE PAR UN TRAITEMENT INTENSIF RESPIRATOIRESEKIGAWA T; HARA S; HIJIOKA T et al.1975; JAP. J. ANESTHESIOL.; JAP.; DA. 1975; VOL. 24; NO 12; PP. 1297-1302; ABS. ANGL.; BIBL. 14 REF.Article

Surface passivation of thin silicon solar cells using silicon-on-insulator waferTAKATO, H; SEKIGAWA, T.Japanese journal of applied physics. 1995, Vol 34, Num 12A, pp 6358-6363, issn 0021-4922, 1Article

TWO CASES OF CARDIAC ARREST CAUSED BY ANESTHETIC VAPORIZER ACCIDENTOKUDA T; HARA S; SEKIGAWA T et al.1974; WAKAYAMA MED. REP.; JAP.; DA. 1974; VOL. 16; NO 3-4; PP. 53-56; BIBL. 4 REF.Article

FABRICATION EXPERIMENTALE DE TRANSISTORS MOS-DSA NON PLANAIRES ET LEURS CARACTERISTIQUESHAYASHI Y; SEKIGAWA T; TARUI Y et al.1976; BULL. ELECTROTECH. LAB.; JAP.; DA. 1976; VOL. 40; NO 4-5; PP. 328-337; ABS. ANGL.; BIBL. 5 REF.Article

Experimental fabrication of XMOS transistors using lateral solid-phase epitaxy of CVD silicon filmsISHII, K; HAYASHI, Y; SEKIGAWA, T et al.Japanese journal of applied physics. 1990, Vol 29, Num 4, pp L521-L523, issn 0021-4922, 2Article

Purification and properties of formate dehydrogenase from Moraxella sp. strin C-1ASANO, Y; SEKIGAWA, T; INUKAI, H et al.Journal of bacteriology. 1988, Vol 170, Num 7, pp 3189-3193, issn 0021-9193Article

Relationship between carrier diffusion length and light-induced defects in hydrogenated amorphous siliconSAKATA, I; YAMANAKA, M; SEKIGAWA, T et al.Japanese journal of applied physics. 1994, Vol 33, Num 4B, pp L567-L570, issn 0021-4922, 2Article

Capacitance-voltage characteristics of semiconductor-insulator-semiconductor (SIS) structureNAGAI, K; SEKIGAWA, T; HAYASHI, Y et al.Solid-state electronics. 1985, Vol 28, Num 8, pp 789-798, issn 0038-1101Article

New silicon devices beyond CMOSSUZUKI, E; ISHII, K; SEKIGAWA, T et al.Journal de physique. IV. 2002, Vol 94, pp 3.27-3.30, issn 1155-4339Conference Paper

Y₂SiO₅ high temperature oxidation resistant coating on C/C composites by plasma sprayingSAKAKIBARA, N; NOTOMI, A; OGURA, Y et al.Nippon Kinzoku Gakkaishi (1952). 1999, Vol 63, Num 1, pp 118-125, issn 0021-4876Article

4-terminal FinFETs with high threshold voltage controllabilityLIU, Y. X; MASAHARA, M; ISHII, K et al.DRC : Device research conference. 2004, pp 207-208, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper

A dynamical power-management demonstration using four-terminal separated-gate FinFETsENDO, K; ISHIKAWA, Y; KOIKE, H et al.IEEE electron device letters. 2007, Vol 28, Num 5, pp 452-454, issn 0741-3106, 3 p.Article

Demonstration and device design consideration of V_th-controllable independent double-gate mosfet (4-terminal XMOS)MASAHARA, M; LIU, Y.-X; SAKAMOTO, K et al.Proceedings - Electrochemical Society. 2005, pp 261-272, issn 0161-6374, isbn 1-56677-461-6, 12 p.Conference Paper

On the V_th controllability for 4-terminal double-gate MOSFETsMASAHARA, M; LIU, Y.-X; KANEMARU, S et al.IEEE international SOI conference. 2004, pp 100-101, isbn 0-7803-8497-0, 1Vol, 2 p.Conference Paper