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au.\*:("SELIM FA")

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HIGH-VOLTAGE, LARGE-AREA PLANAR DEVICESSELIM FA.1981; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1981; VOL. 2; NO 9; PP. 219-221; BIBL. 7 REF.Article

THE DEFECT STRUCTURE OF PHOSPHORUSDOPED CDTE.SELIM FA; KROGER FA.1977; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1977; VOL. 124; NO 3; PP. 401-408; BIBL. 20 REF.Article

SINGLE-CRYSTAL CDTE WITH ABSORPTION AT 10,6 MU M FOR USE AS IR LASER WINDOWSSELIM FA; KROGER FA.1978; J. APPL. PHYS.; USA; DA. 1978; VOL. 49; NO 7; PP. 3737-3741; BIBL. 18 REF.Article

EFFECT OF HEAT TREATMENT ON THE MICROHARDNESS OF INDIUM-DOPED CDTE SINGLE CRYSTALS.SWAMINATHAN V; SELIM FA; KROEGER FA et al.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 30; NO 2; PP. 721-729; ABS. ALLEM.; BIBL. 22 REF.Article

DIFFUSION AND INCORPORATION OF ALUMINUM IN SILICON.RAI CHOUDHURY P; SELIM FA; TAKEI WJ et al.1977; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1977; VOL. 124; NO 5; PP. 762-766; BIBL. 10 REF.Article

PRECIPITATION IN PURE AND INDIUM-DOPED CDTE AS A FUNCTION OF STOICHIOMETRY.SELIM FA; SWAMINATHAN V; KROGER FA et al.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 29; NO 2; PP. 465-473; ABS. ALLEM.; BIBL. 22 REF.Article

LOW VOLTAGE ZNO VARISTOR: DEVICE PROCESS AND DEFECT MODELSELIM FA; GUPTA TK; HOWER PL et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 1; PP. 765-768; BIBL. 21 REF.Article

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