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USING FERMI-DIRAC STATISTICS IN THE DEPOLARIZATION-FIELD CALCULATIONS.WURFEL P; BATRA IP.1974; PHYS. REV., B; U.S.A.; DA. 1974; VOL. 10; NO 3; PP. 1118-1121; BIBL. 8 REF.Article

RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS.CHANG LL; ESAKI L; TSU R et al.1974; APPL. PHYS. LETTERS; U.S.A.; DA. 1974; VOL. 24; NO 12; PP. 593-595; BIBL. 12 REF.Article

ELECTROLUMINESCENCE FROM CADMIUM SULPHIDE MS, MIS AND SIS DEVICESWHEELER DJ; HANEMAN D.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 8; PP. 875-882; H.T. 3; BIBL. 31 REF.Serial Issue

SEMICONDUCTOR IMAGE DEVICES FOR SPECTROSCOPY AUTOGUIDING AND PHOTOMETRYJELLEY JV.1973; OBSERVATORY; G.B.; DA. 1973; VOL. 93; NO 992; PP. 9-13; BIBL. 14REF.Serial Issue

MESURE DE L'EPAISSEUR DU DOMAINE DE SENSIBILITE DES DETECTEURS AU SILICIUMSELYUTIN VP; KRIDINER LS; GATSENKO LS et al.1972; PRIBORY TEKH. EKSPER.; S.S.S.R.; DA. 1972; NO 6; PP. 54-56; BIBL. 5 REF.Serial Issue

ETAT ACTUEL DU DEVELOPPEMENT DES DETECTEURS CDTESKRIVANKOVA M.1973; JADER. ENERG.; CESKOSL.; DA. 1973; VOL. 19; NO 2; PP. 47-50; ABS. ANGL.; BIBL. 18 REF.Serial Issue

DETECTEUR A BARRIERE DE SURFACE SI PVAKHTEL VM; DEGTYARENKO VN; SUKHOTIN LN et al.1972; PRIBORY TEKH. EKSPER.; S.S.S.R.; DA. 1972; NO 4; PP. 66-67; BIBL. 4 REF.Serial Issue

SURFACE BARRIER PARTICULE DETECTORSHANSEN NJ; SCOTT RG; HENDERSON DJ et al.1972; NUCL. INSTRUM. METHODS; NETHERL.; DA. 1972; VOL. 104; NO 2; PP. 333-336; BIBL. 7 REF.Serial Issue

VANNE A VIDE DE FAIBLE GABARIT POUR CRYOSTAT DE DETECTEUR AU GERMANIUMGRINBERG AP.1972; PRIBORY TEKH. EKSPER.; S.S.S.R.; DA. 1972; NO 4; PP. 241-242; BIBL. 3 REF.Serial Issue

EVALUATING SEMICONDUCTOR RADIATION DETECTORSBECKETT J.1972; PROCESS INSTRUMENT.; G.B.; DA. 1972; VOL. 1; NO 9; PP. 431-432; BIBL. 4 REF.Serial Issue

EVALUATION OF LITHIUM DRIFTED GERMANIUM DETECTORS FOR ORGAN SCANNINGPATTON J; BRILL AB; ROLFES R et al.sdORO-2401-49; CONF-710605-1; U.S.A.; DA. S.D.; PP. 1-19; (18TH ANNU. MEET. SOC. NUCL. MED.; LOS ANGELES, CALIF.; JUNE 28-JULY 2, 1971). MICROFICHEConference Proceedings

EFFECT OF IONIZING RADIATIONS ON METAL-POLYMER-SILICON STRUCTURESBUI AI; CARCHANO H; SANCHEZ D et al.1973; APPL. PHYS. LETTERS; U.S.A.; DA. 1973; VOL. 22; NO 3; PP. 108-110; BIBL. 8 REF.Serial Issue

DISLOCATIONS IN NONMETALSALEXANDER H; HAASEN P.1972; ANNU. REV. MATER. SCI.; U.S.A.; DA. 1972; VOL. 2; PP. 291-312; BIBL. 2 P. 1/2Serial Issue

LA MESURE DES PARAMETRES DES COUCHES MINCES DIELECTRIQUES DOUBLES SUR UN SUBSTRAT SEMICONDUCTEUR PAR UNE METHODE ELLIPSOMETRIQUESVITASHEV KK; SEMENENKO AI; SEMENENKO LV et al.1972; OPT. I SPEKTROSK.; S.S.S.R.; DA. 1972; VOL. 32; NO 5; PP. 1020-1026; BIBL. 13 REF.Serial Issue

THERMOELECTRIC POWER OF THE EXTRINSIC MOTT SEMICONDUCTOR.BARI RA.1974; PHYS. REV., B; U.S.A.; DA. 1974; VOL. 10; NO 4; PP. 1560-1563; BIBL. 6 REF.Article

ELECTRON-BEAM-SEMICONDUCTOR APPLICATION TO LASER PULSINGWAGNER HM.1973; I.E.E.E. J. QUANTUM ELECTRON.; U.S.A.; DA. 1973; VOL. 9; NO 6; PP. 606-607; BIBL. 3 REF.Serial Issue

SEMICONDUCTEUR CHARACTERIZATION TECHNIQUES: PROCEEDINGS/OF THE TOPICAL CONFERENCE ON CHARACTERIZATION TECHNIQUES FOR SEMICONDUCTOR MATERIALS AND DEVICES, SEATTLE, WA, MAY 21-26, 1978BARNES PA ED; ROZGONYI GA ED.1978; SEMICONDUCTOR CHARACTERIZATION TECHNIQUES. TOPICAL CONFERENCE ON CHARACTERIZATION TECHNIQUES FOR SEMICONDUCTOR MATERIALS AND DEVICES/1978-05-21/SEATTLE, WA; USA; PRINCETON: THE ELECTROCHEMICAL SOCIETY; DA. 1978; XII-532 P.: ILL.; 23 CMConference Proceedings

PASSIVATION OF GERMANIUM DEVICES. II. THE ELECTRICAL PROPERTIES OF GE-SIO2 AND GE-SI3N4 INTERFACES.YASHIRO T; NAGAI H; YANO K et al.1974; REV. ELECTR. COMMUNIC. LAB.; JAP.; DA. 1974; VOL. 22; NO 11-12; PP. 1057-1068; BIBL. 7 REF.Article

PROPRIETES ELECTROPHYSIQUES DE STRUCTURES ELECTROLYTETYAGAJ VA; PETROVA NA; SHIRSHOV YU M et al.1972; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1972; NO 10; PP. 80-88; H.T. 2; BIBL. 14 REF.Serial Issue

CARACTERISTIQUES ENERGETIQUES D'UN CONVERTISSEUR THERMOELECTRIQUE A BASE D'UN COMPOSE SEMICONDUCTEUR DOPEALIEV IA; NAMAZOV EH M.1976; ZA TEKH. PROGR., AZERBAJDZH. S.S.R.; S.S.S.R.; DA. 1976; NO 1; PP. 27-30; ABS. RUSSE; BIBL. 3 REF.Article

THE GENERAL TRANSMISSION LINE EQUIVALENT CIRCUIT MODEL FOR DEGENERATE AND NON-DEGENERATE CARRIER CONCENTRATIONS IN SEMICONDUCTORS.GREEN MA; SHEWCHUN J.1974; SOLID-STATE ELECTRON.; G.B.; DA. 1974; VOL. 17; NO 7; PP. 717-723; BIBL. 18 REF.Article

FIELD EFFECT SEMICONDUCTOR LASERSAN JC; CHO Y; OHKE S et al.1980; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1980; VOL. 16; NO 12; PP. 1300-1302; BIBL. 12 REF.Article

DETECTEUR AU SI A BARRIERE DE SURFACE DE GRANDE SURFACEVIL'GEL'M I; GUMNEROVA LI; KRATSIKOVA J et al.1972; JINR-P13-6515; S.S.S.R.; DA. 1972; PP. (9 P.); ABS. ANGL.; BIBL. 4 REF.Report

EFFET ACOUSTOELECTRIQUE DANS UNE STRUCTURE FEUILLETEE PIEZODIELECTRIQUE-SEMICONDUCTEURKMITA AM; MEDVED AV.1972; FIZ. TVERD. TELA; S.S.S.R.; DA. 1972; VOL. 14; NO 9; PP. 2646-2655; BIBL. 7 REF.Serial Issue

INFLUENCE DU RAYONNEMENT NEUTRONIQUE SUR LES CARACTERISTIQUES SPECTROMETRIQUES DES DETECTEURS SI(LI)SOLOV'EV SM; TYVIN LN; EHJSMONT VP et al.1972; ATOM. ENERG.; S.S.S.R.; DA. 1972; VOL. 33; NO 5; PP. 918-919; RES. DE L'ART. NO 624-6752 DEPOSE A LA REDACTION DE CE PERSerial Issue

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