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ANWENDUNG VON ALUMINIUM-HALBZEUG IN DER ELEKTROINDUSTRIE = THE USE OF ALUMINIUM SEMI FINISHED PRODUCTS IN THE ELECTRIC INDUSTRIES = LUTILISATION DES SEMI-PRODUITS EN ALUMINIUM DANS LINDUSTRIE ELECTRIQUEMIER G.1983; SCHWEIZ. ALUM. RUNDSCH.; ISSN 0036-7257; CHE; DA. 1983-02; VOL. 33; NO 1; PP. 19-25Article

ELECTRICAL CONDUCTIVITY OF SOLID YTTRIUM SULFIDENAKAMURA H; GUNJI K.1983; J. JAP. INST. MET.; ISSN 0021-4876; JPN; DA. 1983-06; VOL. 47; NO 6; PP. 490-494; BIBL. 9 REF.Article

HOCHREINE METALLE, LEGIERUNGEN, METALLVERBINDUNGEN IN DER ELEKTRONIK = HIGH PURE METALS, ALLOYS, METAL COMPOUNDS IN ELECTRONICSHEINER H.1983; METALL (BERL.); ISSN 0026-0746; DEU; DA. 1983-05; VOL. 37; NO 5; PP. 509Article

NUCLEAR SPIN-LATTICE RELAXATION DUE TO QUADRUPOL INTERACTION WITH CURRENT CARRIERS IN QUANTIZING MAGNETIC FIELDS = KERNSPIN-GITTER-RELAXATION DURCH QUADRUPOLWECHSELWIRKUNG MIT STROMTRAEGERN IN QUANTISIERTEN MAGNETFELDERN = RELAXATION DE RESEAU DE SPINS NUCLEAIRES PAR INTERACTION QUADRUPOLAIRE AVEC DES PORTEURS DE COURANT DANS UN CHAMP MAGNETIQUE QUANTIFIENEIMARK EI; VUGMEISTER BE.1982; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1982-06; VOL. 111; NO 2; PP. K113-K115; BIBL. 3 REF.Article

THE PHYSICS OF GLASSPHILLIPS JC.1982; PHYS. TODAY; USA; DA. 1982-02; VOL. 35; NO 2; PP. 27-33; BIBL. 13 REF.Article

IMPACT OF PULSE LASER RADIATION ON MERCURY TELLURIDEKURILO IV; KIYAK SG; PALIVODA IP et al.1982; IZV. AKAD. NAUK SSSR, NEORG. MATER.; ISSN 0002-337X; SUN; DA. 1982-06; VOL. 18; NO 6; PP. 935-938; BIBL. 4 REF.Article

INVESTIGATION OF LOW TEMPERATURE BRAZING BETWEEN N+ TYPE SI AND W ELECTRODE USING AL-CU SOLIDERONUKI J; SOENO K.1982; NIPPON KINZOKU GAKKAISHI (1952). (JOURNAL OF THE JAPAN INSTITUTE OF METALS); ISSN 0021-4876; JPN; DA. 1982; VOL. 46; NO 8; PP. 748-754; ABS. ENG; BIBL. 17 REF.Article

KINETICS OF FRICTION OF CONTACT SURFACES IN ULTRASONIC MICROWELDINGGUSEV OV; RYDZEVSKIJ AP; SHORSHOROV M KH et al.1982; FIZ. HIM., OBRAB. MATER.; ISSN 0015-3214; SUN; DA. 1982; NO 3; PP. 93-98; BIBL. 6 REF.Article

WILD WEAR IN PURE METAL/SEMICONDUCTOR RUBBINGMISHINA H; SASADA T.1982; JUNKATSU (JOURNAL OF JAPAN SOCIETY OF LUBRICATION ENGINEERS); ISSN 0449-4156; JPN; DA. 1982; VOL. 27; NO 10; PP. 751-757; ABS. ENG; BIBL. 10 REF.Article

KRISTALLZUECHTUNG VON III-V-HALBLEITERN MIT LOESUNGSZONEN = CRYSTAL GROWING OF III-V SEMICONDUCTORS WITH SOLUTION ZONESBENZ KW.1982; METALL (BERL.). METALLWISSENSCHAFT UND TECHN; DEU; DA. 1982-01; VOL. 36; NO 1; PP. 25-28; BIBL. 13 REF.Article

EFFECTS OF GOLD-PLATING ADDITIVES ON SEMICONDUCTOR WIRE BONDING = EFFET DES ADDITIFS A UN BAIN DE DORURE EN EGARD A L'ADHERENCE DE FILS SUR DES SEMICONDUCTEURSENDICOTT DW; JAMES HK; NOBEL F et al.1981; PLAT. SURF. FINISH.; ISSN 0360-3164; USA; DA. 1981; VOL. 68; NO 11; PP. 58-61; BIBL. 15 REF.Article

HIGH PRECISION POLISHING OF SEMICONDUCTOR MATERIALS USING HYDRODYNAMIC PRINCIPLEWATANABE J; SUZUKI J.1981; CIRP ANN.; CHE; DA. 1981-01; VOL. 30; NO 1; PP. 91-95; BIBL. 3 REF.Article

LASER MACHINING OF CHIP CARRIERSBYRUM JE.1983; MANUF. ENG.; ISSN 0361-0853; USA; DA. 1983-05; VOL. 90; NO 5; PP. 73-74Article

INTERACTION OF METALS WITH SEMICONDUCTOR SURFACES = INTERACTION DES METAUX AVEC LES SURFACES DE SEMICONDUCTEURSBRILLSON LJ.1982; APPL. SURF. SCI.; ISSN 0378-5963; NLD; DA. 1982; VOL. 11-12; PP. 249-267; BIBL. 73 REF.Conference Paper

THE DENSITY OF STATES AND BAND EDGE SHIFT OF UNDOPED FERROMAGNETIC SEMICONDUCTORS. REAL SPIN 7/2MATLAK M; RAMAKANTH A.1982; Z. PHYS., B; DEU; DA. 1982-05; VOL. 46; NO 3; PP. 207-211; BIBL. 25 REF.Article

THE NATURE OF THE PASSIVE FILM ON IRON. III: THE CHEMI-CONDUCTOR MODEL AND FURTHER SUPPORTING EVIDENCE = NATURE DU FILM PASSIF SUR FE. III: LE MODELE CHIMIO-CONDUCTEUR ET AUTRES PREUVESCAHAN BD; CHIA TIEN CHEN.1982; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 5; PP. 921-925; BIBL. 22 REF.Article

GAS CHROMATOGRAPHIC DETERMINATION OF CARBON IN METALS AND SEMICONDUCTOR MATERIALS USING ARC DISCHARGEREZCHIKOV VG; SKACHKOVA IN; KUZNETSOVA TS et al.1982; Z. ANAL. HIM.; ISSN 0044-4502; SUN; DA. 1982; VOL. 37; NO 3; PP. 421-424; ABS. ENG; BIBL. 5 REF.Article

TECHNOLOGIEN UND AUSRUESTUNGEN ZUM KONTAKTIEREN VON NIKROELEKTRONISCHEN HALBLEITERSCHALTKREISEN - EINE UEBERSICHT. II = TECHNOLOGIES AND EQUIPMENT FOR BONDING MICROELECTRONIC SEMICONDUCTOR CIRCUITS. AN OVERVIEW. II = TECHNIQUES ET MATERIELS D'ASSEMBLAGE DES CIRCUITS MICROELECTRONIQUES A SEMI-CONDUCTEURS. IIRUDOLF F; LAUTERWALD B; BARTSCH P et al.1982; SCHWEISSTECHNIK; ISSN 0036-7192; DDR; DA. 1982; VOL. 32; NO 12; PP. 554-558; ABS. ENG/RUS; BIBL. 25 REF.; LOC. ISArticle

HERSTELLUNG UND UNTERSUCHUNG GROSSER EINKRISTALLE DER FESTEN LOESUNGEN ZNXCD1-XSEBUDENNAYA LD; NIZKOVA AI; PEKAR GS et al.1982; IZV. AKAD. NAUK SSSR, NEORG. MATER.; ISSN 0002-337X; SUN; DA. 1982-06; VOL. 18; NO 6; PP. 908-912; BIBL. 12 REF.Article

EFFECT OF TEMPERATURE TREATMENT ON AL/SI AND AL/POLY-SI CONTACTS = INFLUENCE DE LA TEMPERATURE DU TRAITEMENT THERMIQUE DES CONTACTS AL/SI ET AL/POLYSISTOEVA RD; POPOVA AL; GANCHEVA VF et al.1981; DOKL. BOLG. AKAD. NAUK; ISSN 0366-8681; BGR; DA. 1981; VOL. 34; NO 7; PP. 977-980; BIBL. 12 REF.Article

PHOTOELECTROCHEMICAL CHARACTERIZATION OF THE PASSIVE FILMS ON IRON AND NICKEL = CARACTERISATION PHOTOELECTROCHIMIQUE DES FILMS DE PASSIVITE SUR FE ET NIWILHELM SM; HACKERMAN N.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 8; PP. 1668-1674; BIBL. 33 REF.Article

DO-IT YOURSELF PHILOSOPHY FOSTERS RAPID GROWTH AT NASDANIELS D.1980; MET. STAMPING; USA; DA. 1980-09; VOL. 14; NO 9; PP. 3-5Article

DIE ENTWICKLUNG DER VERGOLDUNGSTECHNOLOGIEN FUER BODENPLATTEN VON HALBLEITERBAUELEMENTEN = EVOLUTION OF GOLD-PLATING TECHNOLOGIES FOR BASE PLATES OF SEMICONDUCTOR SUBASSEMBLIESMUECKE KH.1980; METALLOBERFLAECHE; DEU; DA. 1980-09; VOL. 34; NO 9; PP. 349-353; BIBL. 12 REF.Article

ISOTOPIC SPECTRAL ANALYSIS OF CARBON IN SOLIDS AND SOLID MATERIALS WITH A UNIVERSAL DEVICELI VN; NEMETS VM; PETROV AA et al.1980; ZAVOD. LAB.; SUN; DA. 1980-11; VOL. 46; NO 11; PP. 1002-1006; BIBL. 2 REF.Article

EFFECTS OF FINITE TEMPERATURES, VALENCE BANDS AND ENERGY GAPS ON THE INDIRECT EXCHANGE INTERACTION IN INTRINSIC SEMICONDUCTORSXAVIER RM; TAFT CA; LARA S et al.1980; J. PHYS. CHEM. SOLIDS; ISSN 0022-3697; USA; DA. 1980; VOL. 41; NO 3; PP. 247-251; BIBL. 14 REF.Article

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