TWO-DIMENSIONAL NUMERICAL SIMULATION OF BIPOLAR SEMICONDUCTOR DEVICES TAKING INTO ACCOUNT HEAVY DOPING EFFECTS AND FERMI STATISTICSPOLSKY BS; RIMSHANS JS.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 4; PP. 275-279; BIBL. 24 REF.Article

ON THE PHYSICS AND MODELING OF SMALL SEMICONDUCTOR DEVICES. IV: GENERALIZED, RETARDED TRANSPORT IN ENSEMBLE MONTE CARLO TECHNIQUESZIMMERMANN J; LUGLI P; FERRY DK et al.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 3; PP. 233-239; BIBL. 39 REF.Article

STRUCTURES PERIODIQUES ET LEUR APPLICATION DANS LES DISPOSITIFS OPTOELECTRONIQUES A SEMICONDUCTEURSMALAG A.1978; ROZPR. ELEKTROTECH.; POLSKA; DA. 1978; VOL. 24; NO 1; PP. 191-225; ABS. ANGL. FR. ALLEM. RUSSE; BIBL. 42 REF.Article

LA MICROANALYSE IONIQUE APPLIQUEE A L'ETUDE DES SEMICONDUCTEURS1978; TELONDE; FRA; DA. 1978; NO 2; PP. 32-33Article

RESISTANCE SEMICONDUCTRICE TENSOMETRIQUE A RECOUVREMENT DE FIXATIONKLIMOV VV.1977; IZMERITEL. TEKH.; S.S.S.R.; DA. 1977; NO 9; PP. 39; BIBL. 5 REF.Article

A STRAIN INDICATOR FOR SEMICONDUCTOR STRAIN GAUGES.RAO BSS; GOPAL RAO M.1977; J. PHYS. E; G.B.; DA. 1977; VOL. 10; NO 8; PP. 808-810; BIBL. 3 REF.Article

NUMERICAL SIMULATION OF TRANSIENT PROCESSES IN 2-D BIPOLAR TRANSISTORSPOLSKY BS; RIMSHANS JS.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 12; PP. 1081-1085; BIBL. 17 REF.Article

PLASTIC ENCAPSULATED SEMICONDUCTOR DEVICES. A BIBLIOGRAPHY.TAYLOR CH.1977; MICROELECTRON. AND RELIABIL.; G.B.; DA. 1977; VOL. 16; NO 6; PP. 701-704Article

TRANSFER MOLDING OLD SOLUTION TO NEW PROBLEMHULL JL.1981; INSUL., CIRCUITS; ISSN 0020-4544; USA; DA. 1981; VOL. 27; NO 11; PP. 19-23Article

MAGNETOMETRE MULTICANAL AVEC UTILISATION DE CONVERTISSEURS GALVANO-MAGNETORECOMBINATIONNELSVOEVODIN MA; ZINOV'EV LP; KOVALENKO AD et al.1978; PRIBORY TEKH. EKSPER.; SUN; DA. 1978; NO 6; PP. 143-145; BIBL. 10 REF.Article

SENSIBILITE A LA CONTRAINTE DES RESISTANCES DE CONTRAINTE AU SILICIUM, FILAMENTEUSES, A UNE ONDE ELASTIQUE DE DEFORMATION PULSEE DANS UN INTERVALLE DE TEMPERATURES -50 A 110^OCABRAMCHUK GA.1978; PRIBORY TEKH. EKSPER.; SUN; DA. 1978; VOL. 6; NO 1; PP. 181-182; BIBL. 3 REF.Article

EPOXY MOLDING COMPOUNDS FOR SEMICONDUCTOR ENCAPSULATION.REINHART J.1977; CIRCUITS MANUF.; U.S.A.; DA. 1977; VOL. 17; NO 8; PP. 29-31Article

TEMPS DE RETABLISSEMENT ET SON LIEN AVEC LA PUISSANCE LIMITE DES DISPOSITIFS SOLIDES MICROONDES DE PROTECTIONLEBEDEV IV; ALYBIN VG; NIKULIN VV et al.1980; IZV. VYSS. UCEBN. ZAVED., RADIOELEKTRON.; ISSN 0021-3470; SUN; DA. 1980; VOL. 23; NO 10; PP. 12-19; BIBL. 19 REF.Article

SCHNELLES BESTIMMEN DES THERMISCHEN WIDERSTANDES VON HALBLEITERBAUELEMENTEN = DETERMINATION RAPIDE DE LA RESISTANCE THERMIQUE DES COMPOSANTS A SEMI-CONDUCTEURSPOEHLMANN B.1980; ELEKTRONIK (MUENCH.); ISSN 0013-5658; DEU; DA. 1980; VOL. 29; NO 22; PP. 125-127Article

KENNZEICHNUNG DES POP-CORN-RAUSCHENS (STOSSRAUSCHENS) UND PARAMETER VON HALBLEITERBAUELEMENTEN. = LA CARACTERISATION DU BRUIT DE GRENAILLE ET LES PARAMETRES DES CONSTITUANTS SEMI-CONDUCTEURSHASSE L; SPIRALSKI L.1977; NACHR.-TECH. ELEKTRON.; DTSCH.; DA. 1977; VOL. 27; NO 7; PP. 305-307; BIBL. 10 REF.Article

CARACTERISTIQUES DES TENSORESISTANCES SEMICONDUCTRICES DANS DES ONDES ELASTIQUESABRAMCHUK GA; ALEKHIN VA; VASHCHENKO AP et al.1977; PROBL. PROCHN., U.S.S.R.; S.S.S.R.; DA. 1977; NO 6; PP. 116-118; BIBL. 10 REF.Article

APPLICATIONS OF ELECTROCHEMISTRY TO FABRICATION OF SEMICONDUCTOR DEVICES.SCHNABLE GL; SCHMIDT PF.1976; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1976; VOL. 123; NO 9; PP. 310C-313C; BIBL. 2 P.Article

TRANSPORT EQUATIONS FOR THE ANALYSIS OF HEAVILY DOPED SEMICONDUCTOR DEVICESLUNDSTRON MS; SCHWARTZ RJ; GRAY JL et al.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 3; PP. 195-202; BIBL. 25 REF.Article

THEORIE DES PROPRIETES DE SEUIL DES PHOTORECEPTEURS SEMICONDUCTEURSNEUSTROEV LN; OSIPOV VV.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 11; PP. 2186-2196; BIBL. 23 REF.Article

ON THE PHYSICS AND THE MODELING OF SMALL SEMICONDUCTOR DEVICES IBARKER JR; FERRY DK.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 6; PP. 519-530; BIBL. 68 REF.Article

PLASTIC ENCAPSULATED SEMICONDUCTOR DEVICES. BIBLIOGRAPHY IVTAYLOR CM.1980; MICROELECTRON. AND RELIABIL.; GBR; DA. 1980; VOL. 20; NO 3; PP. 287-291Article

NEW SEMICONDUCTOR ACTIVE DEVICE: THE CONDUCTIVITY-CONTROLLED TRANSISTORCARUSO A; SPIRITO P; VITALE G et al.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 10; PP. 267-268; BIBL. 6 REF.Article

ASPECTS TECHNOLOGIQUES DE CONSTRUCTION DES COMPOSANTS SEMICONDUCTEURSPINCHON P; BIET JP; GLOTON JP et al.1979; TECHNIQUES DE L'INGENIEUR.; ELECTRONIQUE; FRA; PARIS: TECH. ING.; DA. 1979; NO E83; FICHE E 1003; 7 P.; BIBL. 22 REF.Book Chapter

ELECTROSTATIC DAMAGE TO SEMICONDUCTOR DEVICES. CAUSES AND CURES.WILLIAMS JH.1978; EVAL. ENGNG; USA; DA. 1978; VOL. 17; NO 5; PP. 46-50; (4 P.)Article

COMPUTER-AIDED ANALYSIS OF SEMICONDUCTOR DEVICES.GAUR SP.1977; IN: ANNU. ASILOMAR CONF. CIRCUITS, SYST., COMPUT. 10; PACIFIC GROVE, CALIF.; 1976; NORTH HOLLYWOOD, CALIF.; WESTERN PERIODICALS; DA. 1977; PP. 557-561; BIBL. 5 REF.Conference Paper