kw.\*:("SEMICONDUCTOR DIODE")
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SUR UNE POSSIBILITE D'EVALUER LES PROPRIETES DE RECOMBINAISON DES CONTACTS ET LEUR EFFET SUR LA CARACTERISTIQUE DE DIODES A SEMICONDUCTEURSGEJFMAN EM; GREKHOV IV; KOSTINA LS et al.1982; RADIOTEKH. I ELEKTRON.; SUN; DA. 1982; VOL. 27; NO 2; PP. 386-391; BIBL. 6 REF.Article
DIRECT DETECTION OF MICROWAVE SIGNALS BY SOLID STATE DIODES.GREEN HE.1977; ELECTR. ENGNG TRANS.; AUSTRAL.; DA. 1977; VOL. 13; NO 2; PP. 63-68; BIBL. 7 REF.Article
ON METAL-SEMICONDUCTOR DIODES FABRICATED BY ELECTRODEPOSITION TECHNIQUESGHOSH K; CHOWDHURY NKD.1983; INTERNATIONAL JOURNAL OF ELECTRONICS THEORETICAL & EXPERIMENTAL; ISSN 0020-7217; GBR; DA. 1983; VOL. 54; NO 5; PP. 615-624; BIBL. 16 REF.Article
ELECTRON-BOMBARDED SEMICONDUCTOR: (EBS) SWITCHMACDONALD RI; HUM RH.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 6; PP. 609-611; BIBL. 9 REF.Article
CALCUL DES PROCESSUS TRANSITOIRES DANS UNE DIODE SEMICONDUCTRICE.GORODETSKIJ SM; LITOVSKIJ MA; RIVKIND V YA et al.1978; RADIOTEKH. I ELEKTRON.; SUN; DA. 1978; VOL. 23; NO 7; PP. 1514-1519; BIBL. 6 REF.Article
JUNCTION IMPEDANCE MEASUREMENTS OF DIODES BY A SIMPLIFIED LOCK-IN AMPLIFIER.JUH TZENG LUE.1977; I.E.E.E. TRANS. INSTRUMENT. MEASUR.; U.S.A.; DA. 1977; VOL. 26; NO 4; PP. 415-419; BIBL. 5 REF.Article
ON THE MAGNETOSENSITIVITY OF SEMICONDUCTOR DIODE STRUCTURES WITH STRONG CARRIER ACCUMULATIONGILENKO MS; KARAGEORGY ALKALAEV PM; LEIDERMAN A YU et al.1981; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1981; VOL. 68; NO 2; PP. K165-K169; BIBL. 12 REF.Article
HIGH-TEMPERATURE CONTACT STRUCTURES FOR SILICON SEMICONDUCTOR DEVICESWITTMER M.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 6; PP. 540-542; BIBL. 17 REF.Article
COMMUTATEURS MICRO-ONDES A DIODES SEMICONDUCTRICES, ELECTRIQUEMENT COMMANDESIL'CHENKO ME; OSIPOV VG.1977; IZVEST. VYSSH. UCHEBN. ZAVED., RADIOELEKTRON.; S.S.S.R.; DA. 1977; VOL. 20; NO 2; PP. 5-17; BIBL. 1 P. 1/2Article
EFFET D'ACCUMULATION DE LA CHARGE EN PROVENANCE DES PORTEURS MINORITAIRES SUR LES PARAMETRES DES DIODES SEMICONDUCTRICES DANS DES DISPOSITIFS RADIOPHYSIQUES. MECANISMES DE DIFFUSION DU REDRESSEMENT DANS UN SCHEMA DE DIODE SEMICONDUCTRICEDAMGOV VN; RZHEVKIN KS.1978; BULG. J. PHYS.; BGR; DA. 1978; VOL. 5; NO 6; PP. 613-625; ABS. ENG; BIBL. 7 REF.Article
DEPLETION LAYER EFFECTS IN THE OPEN-CIRCUIT-VOLTAGE-DECAY LIFETIME MEASUREMENTMAHAN JE; BARNES DL.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 10; PP. 989-994; BIBL. 12 REF.Article
A DIFFICULTY IN THE THEORY OF P+-N JUNCTION DIODE NOISEVAN DER ZIEL A.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 9; PP. 771-772; BIBL. 2 REF.Article
BULK CARRIER LIFETIME MEASUREMENT FROM TRANSIENT DIFFUSION PHOTOCURRENT IN SEMICONDUCTOR DIODESBIELLE DASPET DM; GASSET GD.1978; SOLID-STATE ELECTRON.; GBR; DA. 1978; VOL. 21; NO 10; PP. 1219-1226; BIBL. 16 REF.Article
TRANSIENT RESPONSE SIMULATION OF SEMICONDUCTOR DIODES WITH DEEP IMPURITY LEVELSYAMAMOTO T; NAGAI M; HARIU T et al.1979; JAP. J. APPL. PHYS.; JPN; DA. 1979; VOL. 18; NO 4; PP. 771-777; BIBL. 8 REF.Article
AN AVALANCHING OPTOELECTRONIC MICROWAVE SWITCHKIEHL RA.1979; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; USA; DA. 1979; VOL. 27; NO 5; PP. 533-539; BIBL. 10 REF.Article
CARACTERISTIQUES A HAUTE FREQUENCE DES DIODES SEMICONDUCTRICES A STRUCTURE LAMELLAIRETAGER AS.1977; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1977; VOL. 11; NO 12; PP. 2322-2329; BIBL. 4 REF.Article
DISTRIBUTION SPECTRALE ET EFFICACITE DU RAYONNEMENT D'UNE DIODE SEMICONDUCTRICE A POLARISATION INVERSEKOSYACHENKO LA.1982; Z. TEH. FIZ.; ISSN 0044-4642; SUN; DA. 1982; VOL. 52; NO 4; PP. 779-781; BIBL. 4 REF.Article
TRANSIENT PARAMETERS OF THE PLANE JUNCTION INFINITE BASE SEMICONDUCTOR DIODE WITH BARRIER CAPACITANCETOMESCU FMG.1979; REV. ROUMAINE SCI. TECH., ELECTROTECH. ENERGET.; ROM; DA. 1979; VOL. 24; NO 1; PP. 99-108; BIBL. 5 REF.Article
NOUVEAU DISPOSITIF D'AMPLIFICATION ET DE LOCALISATION DE PHOTOELECTRONS ASSOCIANT UN TUBE A VIDE ET UNE CIBLE A SEMI-CONDUCTEURSGARIOD R; ALLEMAND R; THOMAS G et al.sd; FRA; DA. S.D.; DGRST/76 7 0819; PAG. MULT.; 30 CM; ACTION CONCERTEE: INSTRUMENTS DE MESUREReport
Current oscillations in semiconductor diodes under streaming instability conditionsGRUZINSKIS, V; REKLAITIS, A.Electronics Letters. 1983, Vol 19, Num 18, pp 733-734, issn 0013-5194Article
METHODS OF AVOIDING EDGE EFFECTS ON SEMICONDUCTOR DIODESTOVE PA.1982; J. PHYS. D; ISSN 0022-3727; GBR; DA. 1982; VOL. 15; NO 4; PP. 517-536; BIBL. 41 REF.Article
TRANSFER OF ON STATES BETWEEN CLOSELY SPACED NEGATIVE-RESISTANCE P+-I-N+DIODESSUPADECH S; VACHRAPIBOOL P; AKIBA Y et al.1979; I.E.E.J. SOLID STATE ELECTRON DEVICES; GBR; DA. 1979; VOL. 3; NO 1; PP. 21-24; BIBL. 5 REF.Article
TRANSMISSION LINE MODEL OF HIGH INJECTION NOISE IN JUNCTION DIODES.VAN DER ZIEL A; VAN VLIET KM.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 8; PP. 721-723; BIBL. 11 REF.Article
A NEW IMPEDANCE-TRANSFORMATION PROPERTY AND ITS APPLICATIONS TO SWITCHING-DIODE Q-FACTOR MEASUREMENTS.MORAWSKI T.1977; INTERNATION. J. CIRCUIT THEORY APPL.; G.B.; DA. 1977; VOL. 5; NO 2; PP. 135-138; BIBL. 8 REF.Article
CHARACTERISTICS OF ELECTROCHEMICALLY DEPOSITED NICKEL-COBALT TUNGSTEN ALLOY SEMICONDUCTOR DIODESMITRA RN; GHOSH K; SINGH BK et al.1983; INTERNATIONAL JOURNAL OF ELECTRONICS THEORETICAL & EXPERIMENTAL; ISSN 0020-7217; GBR; DA. 1983; VOL. 54; NO 2; PP. 355-360; BIBL. 10 REF.Article