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EXTINCTION DES EXCITONS A LA LIMITE DE SEPARATION PLANE METAL SEMICONDUCTEURAGRANOVICH VM; GLUSHKO E YA; MAL'SHUKOV AG et al.1982; FIZ. TVERD. TELA; ISSN 0367-3294; SUN; DA. 1982; VOL. 24; NO 2; PP. 534-538; BIBL. 10 REF.Article

PARTICULARITES DU COMPORTEMENT D'UN CONTACT METAL-SEMICONDUCTEUR DANS UN PROCESSUS D'IRRADIATION NEUTRONIQUEDUBOVOJ VK; PAVLENKO AA; PINKOVSKAYA MB et al.1979; POLUPROVODN. TEKH. MIKROELEKTRON.; UKR; DA. 1979; NO 29; PP. 24-27; BIBL. 6 REF.Article

SOME INVESTIGATIONS ON VACUUM-EVAPORATED AL-CDSE THIN FILM DIODES.TSUGE H; ONUMA Y.1977; JAP. J. APPL. PHYS.; JAP.; DA. 1977; VOL. 16; NO 11; PP. 1973-1978; BIBL. 18 REF.Article

EVALUATION OF "BARRIER" METALS FOR SINTERED PLATINUM-GAAS CONTACTS.BERENZ JJ; SCILLA GJ; WRICK VL et al.1976; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1976; VOL. 13; NO 6; PP. 1152-1157; BIBL. 26 REF.Article

STUDY OF METAL-SEMICONDUCTOR INTERFACE STATES USING SCHOTTKY CAPACITANCE SPECTROSCOPYBARRET C; CHEKIR F; VAPAILLE A et al.1983; JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS; ISSN 0022-3719; GBR; DA. 1983; VOL. 16; NO 12; PP. 2421-2438; BIBL. 18 REF.Article

METAL-SEMICONDUCTOR SCHOTTKY BARRIER JUNCTIONS. I: FABRICATIONSHARMA BL; GUPTA SC.1980; SOLID STATE TECHNOL.; USA; DA. 1980; VOL. 23; NO 5; PP. 97-101; BIBL. 195 REF.Article

APPLICATION OF AUGER ELECTRON SPECTROSCOPY TO THE STUDY OF METAL-SEMICONDUCTOR INTERFACIAL REACTIONSUCHOL KIM; KAMMURA W; IWAMI M et al.1980; TECHNOL. REP. OSAKA UNIV.; ISSN 0030-6177; JPN; DA. 1980; VOL. 30; NO 1517-1550; PP. 81-87; BIBL. 14 REF.Article

FORMATION OF VARIOUS METAL-SEMICONDUCTOR JUNCTIONS BY MEANS OF ION EVAPORATION.GLASER P; HERMAN A; VAGO G et al.1977; VACUUM; G.B.; DA. 1977; VOL. 27; NO 3; PP. 197-199; BIBL. 10 REF.; (INT. SYMP. VAC. THIN FILM TECHNOL. PROC.; UPPSALA; 1976)Conference Paper

THEORETICAL STUDY OF METAL OVERLAYER THICKNESS EFFECTS ON THE ELECTRONIC PROPERTIES OF METAL-SEMICONDUCTOR INTERFACESMASRI P; LANGLADE P.1981; J. PHYS., C, SOLID STATE PHYS.; ISSN 0022-3719; GBR; DA. 1981; VOL. 14; NO 34; PP. 5379-5389; BIBL. 21 REF.Article

ON THE LOCATION OF THE INTERFACE FERMI LEVEL IN METAL-SEMICONDUCTOR SCHOTTKY-BARRIER CONTACTSCHOT T.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 73; NO 2; PP. 551-558; ABS. GER; BIBL. 46 REF.Article

TIME-RESOLVED CHARGE INJECTION: EFFECT OF INTERFACIAL AMBIENTS UPON CONTACT PERFORMANCESLOWIK JH; BRILLSON LJ; BRUCKER CF et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 1; PP. 550-556; BIBL. 26 REF.Article

ARE INTERFACE STATES CONSISTENT WITH SCHOTTKY BARRIER MEASUREMENTS.FREEOUF JL.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 3; PP. 285-287; BIBL. 15 REF.Article

EFFECT OF ELECTRON HEATING BY SURFACE ELECTRIC FIELDS ON OSCILLATING PHOTORESPONSE SPECTRA OF GALLIUM ARSENIDE-METAL STRUCTURESALPEROVICH VL; KRAUCHENKO AF; PAKHANOV NA et al.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 65; NO 1; PP. 259-263; ABS. RUS; BIBL. 5 REF.Article

NEW TECHNIQUE FOR RESOLVING CHARGE INJECTION ACROSS METAL-SEMICONDUCTOR INTERFACESSLOWIK JH.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 4; PP. 269-271; BIBL. 7 REF.Article

ELECTRICAL CHARACTERISTICS OF METAL-SEMICONDUCTOR JUNCTIONSSCHNEIDER MV.1980; IEEE TRANS. MICROWAVE THEORY TECH.; ISSN 0018-9480; USA; DA. 1980; VOL. 28; NO 11; PP. 1169-1173; BIBL. 16 REF.Article

MECANISME DE FORMATION D'UNE BARRIERE REDRESSEUSE A UN CONTACT METAL-SEMICONDUCTEURVYATKIN AP; MAKSIMOVA NK; STEPANOV VE et al.1978; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1978; NO 27; PP. 21-27; BIBL. 23 REF.Article

A PULSE METHOD FOR THE MEASUREMENT OF CONTACT RESISTANCE AND BULK RESISTANCE OF SEMICONDUCTORS SAMPLES.DHAR S; NAG BR.1978; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1978; VOL. 125; NO 3; PP. 508-510; BIBL. 11 REF.Article

ELECTRICAL PROPERTIES OF THIN FILMS-METAL-SEMICONDUCTOR CONTACTS. 2.1 METAL-SEMICONDUCTOR JUNCTIONS-RELATED TO DEPOSITION OF THIN FILMS.EISELE K; SCHULZ M.1977; VACUUM; G.B.; DA. 1977; VOL. 27; NO 3; PP. 181-188; BIBL. 30 REF.; (INT. SYMP. VAC. THIN FILM TECHNOL. PROC.; UPPSALA; 1976)Conference Paper

STRUCTURES DE BARRIERE SUPERFICIELLE SUR ANTIMONIURE DE GALLIUMKRUKOVSKAYA LP; BERMAN LS; VUL A YA et al.1977; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1977; VOL. 11; NO 10; PP. 1893-1896; BIBL. 13 REF.Article

FIELD EMISSION THROUGH SEMICONDUCTOR AND DIELECTRIC LAYERS.BOBEV KS; DIAKONOVA NI; MILESHKINA NV et al.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 38; NO 1; PP. 393-399; ABS. ALLEM.; BIBL. 18 REF.Article

SCHOTTKY BARRIERS ON COMPOUND SEMICONDUCTORS: THE ROLE OF THE ANION.MCCALDIN JO; MCGILL TC; MEAD CA et al.1976; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1976; VOL. 13; NO 4; PP. 802-806; BIBL. 18 REF.; (PHYS. COMPD. SEMICOND. INTERFACES. ANNU. CONF. 3. PROC.; SAN DIEGO, CALIF.; 1976)Conference Paper

INTERDIFFUSION: CAS DES MULTICOUCHES MINCES METALLIQUES ET DU CONTACT METAL SILICIUM.SIEJKA J.1976; VIDE; FR.; DA. 1976; NO 183 SUPPL.; PP. 231-251; BIBL. 30 REF.; (MATER. TECHNOL. MICROELECTR. TENDANCES ACTUELLES. COLLOQ. C.R.; MONTPELLIER; 1976)Conference Paper

OSCILLATIONS PERIODIQUES STABLES EN UN CONTACT PONCTUEL METAL-SILICIUM DE TYPE NVLASOV AB; ZYRYANOV GK; KOMAISHKO GS et al.1976; VEST. LENINGRAD. UNIV.; S.S.S.R.; DA. 1976; NO 10; PP. 52-58; ABS. ANGL.; BIBL. 11 REF.Article

METAL-SEMICONDUCTOR CONTACTSRHODERICK EH.1982; IEE PROCEEDINGS. PART I. SOLID-STATE AND ELECTRON DEVICES; ISSN 0143-7100; GBR; DA. 1982; VOL. 129; NO 1; PP. 1-14; BIBL. 67 REF.Article

TRANSIENT DISTORTION AND DLTSNORAS JM.1981; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1981; VOL. 39; NO 11; PP. 1225-1227; BIBL. 8 REF.Article

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