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EFFET DE LA SOUS-COUCHE DE GEO2 SUR LA CAPTURE DES PORTEURS DE CHARGE DANS LE SYSTEME GERMANIUM-SIO2 PYROLITIQUEZABOTIN VM; KOZLOV SN; PLOTNIKOV GS et al.1977; MIKROELEKTRONIKA; S.S.S.R.; DA. 1977; VOL. 6; NO 4; PP. 359-364; BIBL. 13 REF.Article

HIGH-TEMPERATURE ANNEALING OF THE SIO2/GAAS SYSTEM.OHDOMARI I; MIZUTANI S; KUME H et al.1978; APPL. PHYS. LETTERS; U.S.A.; DA. 1978; VOL. 32; NO 4; PP. 218-220; BIBL. 5 REF.Article

SOME PROPERTIES OF THE OXIDES OF THE TETRAHEDRAL SEMICONDUCTORS AND THE OXIDE-SEMICONDUCTOR INTERFACES.PANTELIDES ST.1977; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1977; VOL. 14; NO 4; PP. 965-967; BIBL. 12 REF.Article

EFFET D'UNE IRRADIATION PAR DES ELECTRONS SUR LES PROPRIETES SUPERFICIELLES DE LA STRUCTURE SI-SIO2KAPLAN GD; KOLESHKO VM; GURSKIJ LI et al.1976; MIKROELEKTRONIKA; S.S.S.R.; DA. 1976; VOL. 5; NO 4; PP. 359-362; BIBL. 5 REF.Article

NEW STUDIES OF THE SI-SIO2 INTERFACE USING AUGER SPUTTER PROFILING.HELMS CR; SPICER WE; JOHNSON NM et al.1978; SOLID STATE COMMUNIC.; G.B.; DA. 1978; VOL. 25; NO 9; PP. 673-676; BIBL. 12 REF.Article

OPTICAL ENHANCEMENT OF THE ELECTRON PARAMAGNETIC RESONANCE SIGNAL FROM SIIII CENTERS AT THE SI/SIO2 INTERFACECAPLAN PJ; POINDEXTER EH.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 1; PP. 522-524; BIBL. 14 REF.Article

THEORY OF CONTINUOUSLY DISTRIBUTED TRAP STATES AT SI-SIO2 INTERFACESSAKURAI T; SUGANO T.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 4; PP. 2889-2896; BIBL. 22 REF.Article

SURFACE STATES AT THE N-GAAS-SIO2 INTERFACE FROM CONDUCTANCE AND CAPACITANCE MEASUREMENTSSTREEVER RL; BRESLIN JT; AHLSTROM EH et al.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 8; PP. 863-868; BIBL. 19 REF.Article

ELECTRON ENERGY LOSS SPECTROSCOPY STUDIES OF THE SI-SIO2 INTERFACEADACHI T; HELMS CR.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 35; NO 2; PP. 199-201; BIBL. 12 REF.Article

INTERFACE STATE BAND BETWEEN GAAS AND ITS ANODIC NATIVE OXIDESAWADA T; HASEGAWA H.1979; THIN SOLID FILMS; NLD; DA. 1979; VOL. 56; NO 1-2; PP. 183-200; BIBL. 36 REF.Article

MOBILE SODIUM ION PASSIVATION IN HCL OXIDESROHATGI A; BUTLER SR; FEIGL FJ et al.1979; J. ELECTROCHEM. SOC.; USA; DA. 1979; VOL. 126; NO 1; PP. 149-154; BIBL. 23 REF.Article

THE SI/SIO2 INTERFACE EXAMINED BY CROSS-SECTIONAL TRANSMISSION ELECTRON MICROSCOPY.BLANC J; BUIOCCHI CJ; ABRAHAMS MS et al.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 30; NO 2; PP. 120-122; BIBL. 6 REF.Article

TUNNELING OF ELECTRONS FROM SI INTO THERMALLY GROWN SIO2.WEINBERG ZA.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 1; PP. 11-18; BIBL. 32 REF.Article

AN AUGER ANALYSIS OF THE SIO2-SI INTERFACE.JOHANNESSEN JS; SPICER WE; STRAUSSER YE et al.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 7; PP. 3028-3037; BIBL. 35 REF.Article

CORRELATION ENTRE LES PROPRIETES ELECTROPHYSIQUES DU SYSTEME SI-SIO2 ET LA CINETIQUE DE LA CROISSANCE DE LA COUCHE D'OXYDE SUR LE SILICIUMARSLAMBEKOV VA; SAFAROV A.1980; MIKROELEKTRONIKA; SUN; DA. 1980; VOL. 9; NO 1; PP. 54-60; BIBL. 16 REF.Article

ANNEALING OF SI-SIO2 INTERFACE STATES USING AR-ION-IMPLANT-DAMAGE-GETTERINGGOLJA B; MASSIBIAN AG.1980; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1980; VOL. 23; NO 12; PP. 1249-1254; BIBL. 27 REF.Article

SI/SIO2 INTERFACE OXIDATION KINETICS: A PHYSICAL MODEL FOR THE INFLUENCE OF HIGH SUBSTRATE DOPING LEVELS. II: COMPARISON WITH EXPERIMENT AND DISCUSSIONHO CP; PLUMMER JD.1979; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1979; VOL. 126; NO 9; PP. 1523-1530; BIBL. 50 REF.Article

STUDIES OF THE EFFECT OF OXIDATION TIME AND TEMPERATURE ON THE SI-SIO2 INTERFACE USING AUGER SPUTTER PROFILINGHELMS CR; JOHNSON NM; SCHWARZ SA et al.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 11 PART. 1; PP. 7007-7014; BIBL. 38 REF.Article

THE PHYSICAL STRUCTURE OF THE INTERFACE BETWEEN SINGLECRYSTAL GAAS AND ITS OXIDE FILMNAVRATIL K; OHLIDAL I; LUKES F et al.1979; THIN SOLID FILMS; NLD; DA. 1979; VOL. 56; NO 1-2; PP. 163-171; BIBL. 11 REF.Article

A HIGH-RESOLUTION ELECTRON MICROSCOPY STUDY OF THE SI-SIO2 INTERFACE.KRIVANEK OL; SHENG TT; TSUI DC et al.1978; APPL. PHYS. LETTERS; U.S.A.; DA. 1978; VOL. 32; NO 7; PP. 437-439; BIBL. 15 REF.Article

ANODIC OXIDES ON GAAS. III. ELECTRICAL PROPERTIESBAYRAKTAROGLU B; HARTNAGEL HL.1978; INTERNATION. J. ELECTRON.; GBR; DA. 1978; VOL. 45; NO 6; PP. 561-571; BIBL. 11 REF.Article

ETUDE DES PERTURBATIONS RADIATIVES DANS LES STRUCTURES SIO2-SI PAR UNE METHODE D'EMISSION EXOELECTRONIQUEKORTOV VS; KRYMKO MM; MORDKOVICH VN et al.1977; MIKROELEKTRONIKA; S.S.S.R.; DA. 1977; VOL. 6; NO 5; PP. 447-450; BIBL. 9 REF.Article

A MODEL FOR DOPED-OXIDE SOURCE DIFFUSION WITH A CHEMICAL REACTION AT THE SILICON-SILICON DIOXIDE INTERFACE.CHAKRABARTI UK.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 2; PP. 111-112; BIBL. 7 REF.Article

APPLICATION OF THE KELVIN METHOD FOR OXIDE CHARGE EVALUATION IN SI-SIO2 STRUCTURES.BUCHHEIM G; JUNGHANS B; LIPPMANN H et al.1977; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1977; VOL. 44; NO 2; PP. 585-591; ABS. ALLEM.; BIBL. 10 REF.Article

INFLUENCE DE L'ETAT DE LA SURFACE DU SILICIUM SUR LA LIMITE DE SEPARATION SI-SIO2 A OXYDE PYROLYTIQUEGURSKIJ LI; RUMAK NV; CHERNYKH AG et al.1976; VESCI AKAD. NAVUK B.S.S.R., FIZ.-TEKH. NAVUK; BYS; DA. 1976; NO 4; PP. 124; IN EXTENSO VINITI NO 1265Article

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