METHODOLOGY OF ELLIPSOMETRIC MEASUREMENTS OF THE SI-SIO₂ DOUBLE LAYER SYSTEM ON SILICON.KRUSZEWSKI J; GUTKOWSKI M.1977; BULL. ACAD. POLON. SCI., SCI. TECH.; POLOGNE; DA. 1977; VOL. 25; NO 2; PP. 131-134; ABS. RUSSE; BIBL. 5 REF.Article

ENTWICKLUNGSRICHTUNGEN BEI GERAETEN ZUR MIKROSTRUKTURERZEUGUNG = TENDANCES DE L'EVOLUTION DES APPAREILS POUR LA FABRICATION DES MICROSTRUCTURESGOMMEL KW.1979; FEINGERAETETECHNIK; ISSN 0014-9683; DDR; DA. 1979; VOL. 28; NO 10; PP. 446-450Article

THE ANALYSIS OF ANODIC OXIDE FILMS ON GAAS AND GAP BY MEANS OF RADIOACTIVE TRACER TECHNIQUES.VERPLANKE JC; TIJBURG RP.1977; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1977; VOL. 124; NO 5; PP. 802-804; BIBL. 9 REF.Article

INVESTIGATION OF CARRIER SWEEPOUT IN OPTOELECTRONIC MICROSTRIP DEVICES USING SINGLE-CRYSTAL SILICON SUBSTRATESPLATTE W; STRAUSS F.1978; ARCH. ELEKTRON. OBERTRAG.-TECH.; DEU; DA. 1978; VOL. 32; NO 12; PP. 499-501; ABS. GER; BIBL. 8 REF.Article

PHYSICAL CONTACT PROPERTIES OF BERYLLIUM METALIZATION ON SILICON DEVICES.MOONEY JB; MCCALDIN JO.1977; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1977; VOL. 124; NO 4; PP. 625-627; BIBL. 16 REF.Article

ANALYSE DE LA LIGNE MICROBANDE SUR UN SUBSTRAT SEMICONDUCTEUR A AIMANTATION LONGITUDINALEKNISHEVSKAYA LV; KOTOV MN; LAURINAVICHYUS AK et al.1980; LITOV. FIZ. SB.; ISSN 0024-2969; SUN; DA. 1980; VOL. 20; NO 6; PP. 47-55; ABS. LIT/ENG; BIBL. 10 REF.Article

MOBILE ION INSTABILITY IN SIO₂ FILMS ON SILICONRAI BP; SRIVASTAVA RS.1979; INTERNATION. J. ELECTRON.; GBR; DA. 1979; VOL. 46; NO 4; PP. 381-392; BIBL. 36 REF.Article

LOW-DOSE N-TYPE ION IMPLANTATION INTO CR-DOPED GAAS SUBSTRATES.DONNELLY JP; BOLZER CO; LINDLEY WT et al.1977; SOLID STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 3; PP. 273-276; BIBL. 12 REF.Article

ANALYSIS OF SLOW-WAVE PHENOMENA IN COPLANAR WAVEGUIDE ON A SEMICONDUCTOR SUBSTRATEFUKUOKA Y; ITOH T.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 14; PP. 589-590; BIBL. 7 REF.Article

EFFICIENCY OF HARMONIC FREQUENCY GENERATION ALONG SCHOTTKY CONTACT MICROSTRIP LINES.EVERSZUMRODE K; BROCKMANN B; JAGER D et al.1977; ARCH. ELEKTRON. UBERTRAG.-TECH.; DTSCH.; DA. 1977; VOL. 31; NO 5; PP. 212-215; ABS. ALLEM.; BIBL. 7 REF.Article

OBSERVATION OF ANODIC OXIDE-FILM GROWTH ON GAAS BY IN SITU DIFFERENTIAL REFLECTANCE.MORITANI A; KUBO H; NAKAI J et al.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 6; PP. 2638-2640; BIBL. 14 REF.Article

METAL-SEMICONDUCTOR CATHODE STRUCTURES WITH ENHANCED INJECTION EFFICIENCY.MOUTOU PC; GODART JJ; MONTEL J et al.1976; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1976; VOL. 13; NO 4; PP. 827-830; BIBL. 8 REF.; (PHYS. COMPD. SEMICOND. INTERFACES. ANNU. CONF. 3. PROC.; SAN DIEGO, CALIF.; 1976)Conference Paper

A NEW NARROW-BEAMWIDTH HIGH-EFFICIENCY ZINC OXIDE ON SILICON STORAGE CORRELATORGREEN JB; KHURI YAKUB BT; KINO GS et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 1; PP. 505-506; BIBL. 8 REF.Article

OPTICAL COUPLING FROM FIBERS TO CHANNEL WAVEGUIDES FORMED ON SILICON.BOYD JT; SRIRAM S.1978; APPL. OPT.; U.S.A.; DA. 1978; VOL. 17; NO 6; PP. 895-898; BIBL. 13 REF.Article

KA-BAND MONOLITHIC GAAS BALANCED MIXERSCHENTE CHAO; CONTOLATIS A; JAMISON SA et al.1983; IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES; ISSN 0018-9480; USA; DA. 1983; VOL. 31; NO 1; PP. 11-15; BIBL. 4 REF.Article

MONOLITHIC GAAS INTERDIGITATED COUPLERSMAHESH KUMAR; SUBBARAO SN; MENNA RJ et al.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 1; PP. 29-32; BIBL. 7 REF.Article

LOW-TEMPERATURE COEFFICIENT BULK ACOUSTIC WAVE COMPOSITE RESONATORSWANG JS; LAKIN KM.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 4; PP. 308-310; BIBL. 7 REF.Article

MONOLITHIC-HYBRID INTEGRATION OF A DIODE LASER WITH A DEPOSITED WAVEGUIDEGUREVICH SA; PORTNOI EL; SKOPINA VI et al.1982; JOURNAL OF OPTICAL COMMUNICATIONS; ISSN 0173-4911; DEU; DA. 1982; VOL. 3; NO 4; PP. 133-137; BIBL. 15 REF.Article

LINBO₃ SURFACE-ACOUSTIC-WAVE EDGE-BONDED TRANSDUCERS ON ST QUARTZ AND (001) CUT GAASOATES DE; BECKER RA.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 10; PP. 761-762; BIBL. 7 REF.Article

RIGOROUS ANALYSIS OF PLANAR MIS TRANSMISSION LINESKENNIS P; FAUCON L.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 13; PP. 454-456; BIBL. 7 REF.Article

DISTRIBUTED-FEEDBACK DYE LASER INTEGRATED WITH A CHANNEL WAVEGUIDE FROMED ON SILICONSRIRAM S; JACKSON HE; BOYD JT et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 9; PP. 721-723; BIBL. 17 REF.Article

PHOTOELASTIC CHANNEL OPTICAL WAVEGUIDES IN EPITAXIAL GAAS LAYERSWESTBROOK LD; FIDDYMENT PJ; ROBSON PN et al.1980; ELECTRON. LETTERS; GBR; DA. 1980; VOL. 16; NO 5; PP. 169-170; BIBL. 5 REF.Article

FORMATION OF IRIDIUM SILICIDES FROM I₂ THIN FILMS ON SI SUBSTRATESPETERSSON S; BAGLIN J; HAMMER W et al.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 5; PP. 3357-3365; BIBL. 27 REF.Article

A LOW SUBSTRATE LEAKAGE JUNCTION ISOLATED P-N-P-N CROSSPOINT ARRAYSHACKLE PW; HARTMAN AR; ADRIAN JM et al.1978; I.E.E.E. J. SOLID STATE CIRCUITS; USA; DA. 1978; VOL. 13; NO 2; PP. 210-217; BIBL. 15 REF.Article

METHODOLOGY OF ELLIPSOMETRIC MEASUREMENTS OF PARAMETERS OF DOUBLE DIELECTRIC LAYER ON ABSORPTION SUBSTRATE.KRUSZEWESKI J; GUTKOWSKI M.1977; BULL. ACAD. POLON. SCI., SCI. TECH.; POLOGNE; DA. 1977; VOL. 25; NO 1; PP. 81-88; ABS. RUSSE; BIBL. 7 REF.Article