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WHISPERING GALLERY LASERS ON SEMI-INSULATING GAAS SUBSTRATESURY I; MARGALIT S; BAR CHAIM N et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 8; PP. 629-631; BIBL. 13 REF.Article

PROPERTIES OF INTERCONNECTION ON SILICON, SAPPHIRE, AND SEMI-INSULATING GALLIUM ARSENIDE SUBSTRATESYUAN HT; LIN YT; CHIANG SY et al.1982; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1982; VOL. 17; NO 2; PP. 269-274; BIBL. 11 REF.Article

FABRICATION OF SI MOSFET'S USING NEUTRON-IRRADIATED SILICON AS SEMI-INSULATING SUBSTRATEVU QUOC HO; SUGANO T.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 4; PP. 487-491; BIBL. 10 REF.Article

THEORY OF TRANSIENT PHOTOCONDUCTIVITY IN COUNTER-DOPED SEMICONDUCTORSHERBERT DC; HUMPHREYS R; HOLEMAN B et al.1980; J. PHYS. C: SOLID STATE PHYS.; ISSN 0022-3719; GBR; DA. 1980; VOL. 13; NO 26; PP. 4979-4993; BIBL. 16 REF.Article

Infrared and photoelectron spectroscopy of semi-insulating silicon layersTRCHOVA, M; ZEMEK, J; JUREK, K et al.Journal of non-crystalline solids. 1998, Vol 227-30, pp 911-915, issn 0022-3093, bConference Paper

Photoluminescence of semi-insulating InP wafers prepared by two-step wafer annealingUCHIDA, M; ODA, O; WARASHINA, M et al.Journal of the Electrochemical Society. 1998, Vol 145, Num 3, pp 1048-1051, issn 0013-4651Article

CARRIER INJECTION AND BACKGATING EFFECT IN GAAS MESFET'SLEE CP; LEE SJ; WELCH BM et al.1982; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 4; PP. 97-98; BIBL. 12 REF.Article

Above band-gap excitation process of the 0.6 eV luminescence band in GaAsTAJIMA, M; IINO, T; ISHIDA, K et al.Japanese journal of applied physics. 1987, Vol 26, Num 6, pp L1060-L1063, issn 0021-4922, 2Article

Phase distinction in semi-insulating polycrystalline silicon by pattern recognition of X-ray photoelectron spectroscopy/X-ray-induced Auger electron spectroscopy dataLESIAK, B; ZEMEK, J; JOZWIK, A et al.Applied surface science. 1998, Vol 135, Num 1-4, pp 318-330, issn 0169-4332Article

Influence of non-stoichiometry on the recombination activity of dislocations in undoped semi-insulating GaAs crystalsGLINCHUK, K. D; PROKHOROVICH, A. V.Crystal research and technology (1979). 1995, Vol 30, Num 2, pp 201-204, issn 0232-1300Article

Temperature dependence of the control of a transistor y a semiinsulating substrate in intregrated in integrated gallium arsenide circuitsGERGEL', V. A; LUK'YANCHENKO, A. I; SOLYAKOV, A. N et al.Soviet physics. Semiconductors. 1991, Vol 25, Num 9, pp 1007-1009, issn 0038-5700Article

Inhomogeneity of the deep center EL2 in GaAs observed by direct infra-red imagingSKOLNICK, M. S; BROZEL, M. R; REED, L. J et al.Journal of electronic materials. 1984, Vol 13, Num 1, pp 107-125, issn 0361-5235Article

11-GHz direct modulation bandwidth GaAlAs window laser on semi-insulating substrate operating at room temperatureLAU, K. Y; BAR-CHAIM, N; URY, I et al.Applied physics letters. 1984, Vol 45, Num 4, pp 316-318, issn 0003-6951Article

Low frequency dielectric characterization of semi-insulating iron-doped InPGREEN, P. W.Semiconductor science and technology. 1998, Vol 13, Num 1, pp 116-123, issn 0268-1242Article

Integratable, high speed buried ridge DFB lasers fabricated on semi-insulating substratesCHARLES, P. M; JONES, G. G; WILLIAMS, P. J et al.Electronics Letters. 1991, Vol 27, Num 9, pp 700-702, issn 0013-5194Article

Photoreflectance study of electric field distributions in semiconductors heterostructures grown on semi-insulating substratesSHEN, H; POLLAK, F. H; WOODALL, J. M et al.Journal of electronic materials. 1990, Vol 19, Num 3, pp 283-286, issn 0361-5235Article

Planar TJS lasers fabricated in semi-insulating GaAs substrates for optoelectronic integrated circuitsISHII, M; KAMON, K; SHIMAZU, M et al.Electronics Letters. 1987, Vol 23, Num 5, pp 179-181, issn 0013-5194Article

Investigations of the electrical and structural characteristics of so MeV 7Li implanted SI-InPDHARMARASU, N; ARULKUMARAN, S; SUMATHI, R. R et al.Physica status solidi. A. Applied research. 1998, Vol 167, Num 1, pp 157-163, issn 0031-8965Article

Physical model of control of a field-effect transistor via a semiinsulating substrateGERGEL', V. A; II'ICHEV, E. A; LUK'YANCHENKO, A. I et al.Soviet physics. Semiconductors. 1990, Vol 24, Num 12, pp 1310-1313, issn 0038-5700Article

The influence of potential fluctuations upon thermally stimulated conductivityRINKEVICIUS, V; KAVALIAUSKIENE, G.Journal of physics. D, Applied physics (Print). 1996, Vol 29, Num 5, pp 1329-1334, issn 0022-3727Article

Evidence of normal EL2 state changes in the temperature range 120 to 150 K in semi-insulating GaAsKAZUKAUSKAS, V; KILIULIS, R.Physica status solidi. B. Basic research. 1993, Vol 179, Num 1, pp K21-K25, issn 0370-1972Article

Trap-enhanced electric fields in semi-insulators : the role of electrical and optical carrier injectionRALPH, S. E; GRISCHKOWSKY, D.Applied physics letters. 1991, Vol 59, Num 16, pp 1972-1974, issn 0003-6951Article

Bulk and near-surface annealing behavior of the 0.8 eV luminescence in semi-insulating gallium arsenideHAEGEL, N. M; KAO, Y. J.Applied physics. A, Solids and surfaces. 1990, Vol 50, Num 3, pp 249-253, issn 0721-7250Article

On the possibility of formation of associated impurity centers in semi-insulating indium phosphide doped by oxygenKULIKOVA, O. V; KULYUK, L. L; NARTYA, N. M et al.Physica status solidi. A. Applied research. 1988, Vol 107, Num 1, pp K57-K60, issn 0031-8965Article

Pair of local vibration mode absorption bands related to EL2 defects in semi-insulating GaAsCHUNYING SONG; WEIKUN GE; DESHENG HIANG et al.Applied physics letters. 1987, Vol 50, Num 23, pp 1666-1668, issn 0003-6951Article

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