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OPTICAL DIELECTRIC CONSTANT OF PB1-XSNXTE IN THE NARROW-GAP REGION.LOWNEY JR; SENTURIA SD.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 5; PP. 1771-1774; BIBL. 20 REF.Article

AN MOS DEVICE FOR AC MEASUREMENT OF SURFACE IMPEDANCE WITH APPLICATION TO MOISTURE MONITORINGGARVERICK SL; SENTURIA SD.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 1; PP. 90-94; BIBL. 7 REF.Article

ORIGIN AND PREVENTION OF HIGH CONTACT RESISTANCE IN MULTILEVEL METAL-POLYIMIDE STRUCTURESDAY DR; SENTURIA SD.1982; J. ELECTRON. MATER.; ISSN 0361-5235; USA; DA. 1982; VOL. 11; NO 3; PP. 441-452; BIBL. 5 REF.Article

A CHARGE-FLOW TRANSISTOR OSCILLATOR CIRCUITSENTURIA SD; FERTSCH MT.1979; I.E.E.E. J. SOLID-STATE CIRCUITS; USA; DA. 1979; VOL. 14; NO 4; PP. 753-757; BIBL. 8 REF.Article

ELECTRON SCATTERING INTERACTION WITH COUPLED PLASMON-POLAR-PHONON MODES IN DEGENERATE SEMICONDUCTORSKIM ME; DAS A; SENTURIA SD et al.1978; PHYS. REV., B; USA; DA. 1978; VOL. 18; NO 12; PP. 6890-6899; BIBL. 30 REF.Article

THE CHARGE-FLOW TRANSISTOR: A NEW MOS DEVICE.SENTURIA SD; SECHEN CM; WISHNEUSKY JA et al.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 30; NO 2; PP. 106-108; BIBL. 10 REF.Article

ANNEALING STUDIES OF PBTE AND PB1-XSNXTEHEWES CR; ADLER MS; SENTURIA SD et al.1973; J. APPL. PHYS.; U.S.A.; DA. 1973; VOL. 44; NO 3; PP. 1327-1332; BIBL. 26 REF.Serial Issue

ELECTRICAL CONDUCTIVITY IN DISORDERED SYSTEMSADLER D; FLORA LP; SENTURIA SD et al.1973; SOLID STATE COMMUNIC.; G.B.; DA. 1973; VOL. 12; NO 1; PP. 9-12; ABS. FR.; BIBL. 13 REF.Serial Issue

THE FEASIBILITY OF ELECTRICAL MONITORING OF RESIN CURE WITH THE CHARGE-FLOW TRANSISTORSENTURIA SD; SHEPPARD NF; POH SY et al.1981; POLYM. ENG. SCI.; ISSN 0032-3888; USA; DA. 1981; VOL. 21; NO 2; PP. 113-118; BIBL. 10 REF.Article

EVALUATION OF A PROCESS FOR ACHIEVING LOW BETWEEN-METAL CONTACT RESISTANCE IN PLASMA ETCHED POLYIMIDE VIASSMITH PK; HERNDON TO; BURKE RL et al.1983; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1983; VOL. 130; NO 1; PP. 225-227; BIBL. 4 REF.Article

DETERMINATION OF THE FIELD EFFECT IN LOW-CONDUCTIVITY MATERIALS WITH THE CARGE-FLOW TRANSISTORSENTURIA SD; RUBINSTEIN J; AZOURY SJ et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 5; PP. 3663-3670; BIBL. 12 REF.Article

ELECTRICAL PROPERTIES OF ION-IMPLANTED POLY(P-PHENYLENE SULFIDE)MAZUREK H; DAY DR; MABY EW et al.1983; JOURNAL OF POLYMER SCIENCE. POLYMER PHYSICS EDITION; ISSN 0098-1273; USA; DA. 1983; VOL. 21; NO 4; PP. 537-551; BIBL. 30 REF.Article

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