Pascal and Francis Bibliographic Databases

Help

Search results

Your search

au.\*:("SHEWCHUN J")

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 68

  • Page / 3

Export

Selection :

  • and

A BETTER APPROACH TO THE EVALUATION OF THE SERIES RESISTANCE OF SOLAR CELLSRAJKANAN K; SHEWCHUN J.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 2; PP. 193-197; BIBL. 23 REF.Article

A POSSIBLE EXPLANATION FOR THE PHOTOVOLTAIC EFFECT IN INDIUM TIN OXIDE ON INP SOLAR CELLS.SINGH R; SHEWCHUN J.1978; J. APPL. PHYS.; USA; DA. 1978; VOL. 49; NO 8; PP. 4588-4591; BIBL. 29 REF.Article

THE SURFACE OXIDE TRANSISTOR (SOT)SHEWCHUN J; CLARKE RA.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 2; PP. 213-219; H.T. 3; BIBL. 16 REF.Serial Issue

GAS DOPING OF VACUUM EVAPORATED EPITAXIAL SILICON FILMSSHEWCHUN J; KING FD.1972; SOLID-STATE ELECTRON.; G.B.; DA. 1972; VOL. 15; NO 7; PP. 775-781; BIBL. 14 REF.Serial Issue

PHOTOVOLTAIC EFFECT IN MIS DIODES OR SCHOTTKY DIODES WITH AN INTERFACIAL LAYER.SINGH R; SHEWCHUN J.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 28; NO 9; PP. 512-514; BIBL. 22 REF.Article

NUMERICAL ANALYSIS OF SEMICONDUCTOR DEVICES WITH PLANAR, CYLINDRICAL AND RADIAL SYMMETRY.GREEN MA; SHEWCHUN J.1974; INTERNATION. J. ELECTRON.; G.B.; DA. 1974; VOL. 37; NO 2; PP. 285-288; BIBL. 6 REF.Article

APPLICATION OF THE SMALL-SIGNAL TRANSMISSION LINE EQUIVALENT CIRCUIT MODEL TO THE A.C., D.C. AND TRANSIENT ANALYSIS OF SEMICONDUCTOR DEVICES.GREEN MA; SHEWCHUN J.1974; SOLID-STATE ELECTRON.; G.B.; DA. 1974; VOL. 17; NO 9; PP. 941-949; BIBL. 22 REF.Article

EXACT FREQUENCY DEPENDENT COMPLEX ADMITTANCE OF THE MOS DIODE INCLUDING SURFACE STATES, SHOCKLEY-READ-HALL (SRH) IMPURITY EFFECTS, AND LOW TEMPERATURE DOPANT IMPURITY RESPONSETEMPLE V; SHEWCHUN J.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 1; PP. 93-113; BIBL. 21 REF.Serial Issue

TEMPERATURE DEPENDENCE OF CURRENT FLOWS IN NONDEGENERATE MIS TUNNEL DIODES.SHEWCHUN J; GREEN MA.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 12; PP. 5179-5184; BIBL. 15 REF.Article

A SULFURIZATION PROCESS FOR THE PREPARATION OF PHOTOVOLTAIC CUXS AND CUINS2 THIN FILMS.SHEWCHUN J; LOFERSKI JJ.1976; IN: HELIOTECH. DEV. INT. CONF. PROC.; DHAHRAN, SAUDI ARABIA; 1975; CAMBRIDGE, MASS.; DEVELOPMENT ANALYSIS ASSOC.; DA. 1976; VOL. 1; PP. 624-642; BIBL. 9 REF.Conference Paper

THE GENERAL TRANSMISSION LINE EQUIVALENT CIRCUIT MODEL FOR DEGENERATE AND NON-DEGENERATE CARRIER CONCENTRATIONS IN SEMICONDUCTORS.GREEN MA; SHEWCHUN J.1974; SOLID-STATE ELECTRON.; G.B.; DA. 1974; VOL. 17; NO 7; PP. 717-723; BIBL. 18 REF.Article

PHONON SPECTROSCOPY OF SILICON CARBIDE USING PN JUNCTIONSSHEWCHUN J; NODWELL B.1972; J. PHYS. CHEM. SOLIDS; G.B.; DA. 1972; VOL. 33; NO 8; PP. 1557-1563; BIBL. 14 REF.Serial Issue

THEORETICAL TUNNELING CURRENT CHARACTERISTICS OF THE SIS (SEMICONDUCTOR-INSULATOR-SEMICONDUCTOR) DIODESHEWCHUN J; TEMPLE VAK.1972; J. APPL. PHYS.; U.S.A.; DA. 1972; VOL. 43; NO 12; PP. 5051-5061; BIBL. 27 REF.Serial Issue

THE IMPORTANCE OF THE ELECTRON AFFINITY OF OXIDE-SEMICONDUCTORS AS USED IN SOLAR CELLSSINGH R; SHEWCHUN J.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 7; PP. 601-602; BIBL. 10 REF.Article

CAPACITANCE PROPERTIES OF MIS TUNNEL DIODES.GREEN MA; SHEWCHUN J.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 12; PP. 5185-5190; BIBL. 11 REF.Article

NITROGEN IMPLANTATION INTO GAP: DAMAGE AND NITROGEN LOCATION STUDIES.THOMPSON DA; JOHAR SS; SHEWCHUN J et al.1975; J. ELECTRON. MATER.; U.S.A.; DA. 1975; VOL. 4; NO 2; PP. 195-207; BIBL. 15 REF.Article

EQUILIBRIUM-TO-NONEQUILIBRIUM TRANSITION IN MOS (SURFACE OXIDE) TUNNEL DIODE.TEMPLE VAK; GREEN MA; SHEWCHUN J et al.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 11; PP. 4934-4943; BIBL. 20 REF.Article

LASER DYNAMICS AND WAVELENGTH TUNING IN ELECTRON-BEAM-PUMPED GAAS = DYNAMIQUE LASER ET ACCAD DE LA LAMBDA DANS GAAS POMPE PAR UN FAISCEAU D'ELECTRONSKAWASAKI BS; GARSIDE BK; SHEWCHUN J et al.1972; APPL. PHYS. LETTERS; U.S.A.; DA. 1972; VOL. 21; NO 10; PP. 477-479; BIBL. 11 REF.Serial Issue

EFFECTS OF TRANSIENT AND PERMANENT OPTICAL CONFINEMENT ON THE FAR-FIELD RADIATION PATTERN FROM ELECTRON-BEAM-PUMPED SEMICONDUCTOR LASERSGOUIN F; SHEWCHUN J; GARSIDE BK et al.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 5; PP. 3083-3095; BIBL. 8 REF.Article

FREQUENCY RESPONSE OF THE CURRENT MULTIPLICATION PROCESS IN MIS TUNNEL DIODES.GREEN MA; TEMPLE VAK; SHEWCHUN J et al.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 9; PP. 745-752; BIBL. 10 REF.Article

EXPERIMENTALLY OBSERVED ADMITTANCE PROPERTIES OF THE SEMICONDUCTOR-INSULATOR-SEMICONDUCTOR (SIS) DIODESHEWCHUN J; CLARKE RA; TEMPLE VAK et al.1972; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1972; VOL. 19; NO 9; PP. 1044-1050; BIBL. 10 REF.Serial Issue

ABSORPTION COEFFICIENT OF SILICON FOR SOLAR CELL CALCULATIONSRAJKAMAN K; SINGH R; SHEWCHUN J et al.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 9; PP. 793-795; BIBL. 16 REF.Article

THEORETICAL LIMIT EFFICIENCY OF DIRECT GAP SOLAR CELLSSPITZER M; LOFERSKI JJ; SHEWCHUN J et al.1980; PHOTOVOLTAIC SPECIALISTS CONFERENCE. 1980. 14/1980/SAN DIEGO CA; USA; NEW YORK: IEEE; DA. 1980; PP. 585-590; BIBL. 13 REF.Conference Paper

CONTACT AREA DEPENDENCE OF MINORITY-CARRIER INJECTION IN SCHOTTKY BARRIER DIODES. = VARIATION AVEC L'AIRE DE CONTACT DE L'INJECTION DE PORTEURS MINORITAIRES DANS DES DIODES A BARRIERE DE SCHOTTKYCLARKE RA; GREEN MA; SHEWCHUN J et al.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 3; PP. 1442-1443; BIBL. 10 REF.Article

PROTON IRRADIATION AT 30OK AND ISOCHRONAL ANNEALING OF REACTIVELY SPUTTERED TA THIN-FILM RESISTORSSHEWCHUN J; HARDY WR; PRONKO PP et al.1972; J. APPL. PHYS.; U.S.A.; DA. 1972; VOL. 43; NO 12; PP. 4915-4921; BIBL. 15 REF.Serial Issue

  • Page / 3