Oscillations propres à la résonance de plasma dans les semiconducteurs à bande interdite étroiteSHIKTOROV, P. N.Fizika i tehnika poluprovodnikov. 1986, Vol 20, Num 6, pp 1089-1092, issn 0015-3222Article

Conservation equations for hot carriers. I: Transport modelsGRUZINSKIS, V; STARIKOV, E; SHIKTOROV, P et al.Solid-state electronics. 1993, Vol 36, Num 7, pp 1055-1066, issn 0038-1101Article

Hot hole effects in uniaxially stressed p-type germanium under E||P|| [111]STARIKOV, E. V; SHIKTOROV, P. N.Optical and quantum electronics. 1991, Vol 23, Num 2, pp S247-S252, issn 0306-8919Article

Une nouvelle approche de calcul du spectre de mobilité différentielle des porteurs de charge chauds: modélisation directe du gradient de la fonction de distribution par la méthode de Monte CarloSTARIKOV, E. V; SHIKTOROV, P. N.Fizika i tehnika poluprovodnikov. 1988, Vol 22, Num 1, pp 72-78, issn 0015-3222Article

Numerical simulation of heavy hole cyclotron resonance NEMAG in p-GeSTARIKOV, E. V; SHIKTOROV, P. N.Optical and quantum electronics. 1991, Vol 23, Num 2, pp S341-S349, issn 0306-8919Article

Effets des trous chauds dans Ge de type p uniaxialement déformé, quand EIIPII[111]STARIKOV, E. V; SHIKTOROV, P. N.Fizika i tehnika poluprovodnikov. 1989, Vol 23, Num 8, pp 1462-1468, issn 0015-3222Article

Rendement de sources de rayonnement à l'état solide basé sur les effets de volume dans Ge-pSTARIKOV, E. V; SHIKTOROV, P. N.Fizika i tehnika poluprovodnikov. 1986, Vol 20, Num 6, pp 1076-1082, issn 0015-3222Article

Conductivité différentielle négative dans GaAs-n aux fréquences de la résonance de transitSTARIKOV, E. V; SHIKTOROV, P. N.Fizika i tehnika poluprovodnikov. 1983, Vol 17, Num 12, pp 2120-2123, issn 0015-3222Article

Terahertz generation due to streaming plasma instability in n⁺-n^--n-n⁺ InN submicron structureSTARIKOV, E; GRUZINSKIS, V; SHIKTOROV, P et al.Physica status solidi. A. Applied research. 2002, Vol 190, Num 1, pp 287-293, issn 0031-8965Conference Paper

Conservation equations for hot carriers. II: Dynamic featuresGRUZINSKIS, V; STARIKOV, E; SHIKTOROV, P et al.Solid-state electronics. 1993, Vol 36, Num 7, pp 1067-1075, issn 0038-1101Article

Calculation of the intrinsic spectral density of current fluctuations in nanometric Schottky-barrier diodes at terahertz frequenciesMAHI, F. Z; HELMAOUI, A; VARANI, L et al.Physica. B, Condensed matter. 2008, Vol 403, Num 19-20, pp 3765-3768, issn 0921-4526, 4 p.Article

Hot-carrier thermal conductivity from the simulation of submicron semiconductor structuresGOLINELLI, P; BRUNETTI, R; MARTIN, M. J et al.Semiconductor science and technology. 1997, Vol 12, Num 11, pp 1511-1513, issn 0268-1242Article

Hydrodynamic analysis of DC and AC hot-carrier transport in semiconductorsGRUZHINSKIS, V; STARIKOV, E; SHIKTOROV, P et al.Semiconductor science and technology. 1993, Vol 8, Num 7, pp 1283-1290, issn 0268-1242Article

Analytical model of high-frequency noise spectrum in Schottky-Barrier diodesSHIKTOROV, P; STARIKOV, E; GRUZINSKIS, V et al.IEEE electron device letters. 2005, Vol 26, Num 1, pp 2-4, issn 0741-3106, 3 p.Article

Monte Carlo calculations of THz generation in nitridesVARANI, L; VAISSIERE, J. C; STARIKOV, E et al.Physica status solidi. A. Applied research. 2002, Vol 190, Num 1, pp 247-256, issn 0031-8965Conference Paper

Frontiers in electronic noise : From submicron to nano structuresREGGIANI, L; PENETTA, C; MATEOS, J et al.International journal of high speed electronics and systems. 2000, Vol 10, Num 1, pp 111-117Conference Paper

A fundamental time scale of collision durationREGGIANI, L; STARIKOV, E; SHIKTOROV, P et al.Solid state communications. 1999, Vol 112, Num 2, pp 119-122, issn 0038-1098Article

Low-field mobility spectrum in nonparabolic compound semiconductorsSTARIKOV, E; SHIKTOROV, P; GRUZINSKIS, V et al.Journal of physics. Condensed matter (Print). 2004, Vol 16, Num 46, pp 8267-8273, issn 0953-8984, 7 p.Article

A macroscopic quantum Langevin equationSHIKTOROV, P; STARIKOV, E; GRUZINSKIS, V et al.Semiconductor science and technology. 2004, Vol 19, Num 4, pp S232-S234, issn 0268-1242Conference Paper

Monte Carlo analysis of the efficiency of tera-hertz harmonic generation in semiconductor nitridesSHIKTOROV, P; STARIKOV, E; GRUZINSKIS, V et al.Physica status solidi. A. Applied research. 2002, Vol 190, Num 1, pp 271-279, issn 0031-8965Conference Paper

Monte Carlo simulation of 4H-SiC IMPATT diodesZHAO, J. H; GRUZINSKIS, V; LUO, Y et al.Semiconductor science and technology. 2000, Vol 15, Num 11, pp 1093-1100, issn 0268-1242Article

Electronic noise and impedance field of submicron n⁺nn⁺ InP diode generatorsGRUZINSKIS, V; STARIKOV, E; SHIKTOROV, P et al.Semiconductor science and technology. 1994, Vol 9, Num 10, pp 1843-1848, issn 0268-1242Article

Saturation de l'amplification dans les transitions optiques directes dans la bande de valence du germaniumPOZHELA, YU. K; STARIKOV, E. V; SHIKTOROV, P. N et al.Fizika i tehnika poluprovodnikov. 1987, Vol 21, Num 4, pp 657-661, issn 0015-3222Article

Terahertz generation in nitrides due to transit-time resonance assisted by optical phonon emission : Heterostructure Terahertz DevicesSTARIKOV, E; SHIKTOROV, P; GRUGINSKIS, V et al.Journal of physics. Condensed matter (Print). 2008, Vol 20, Num 38, issn 0953-8984, 384209.1-384209.12Article

Monte Carlo calculations of hot-electron transport and diffusion noise in GaN and InNSTARIKOV, E; SHIKTOROV, P; GRUZINSKIS, V et al.Semiconductor science and technology. 2005, Vol 20, Num 3, pp 279-285, issn 0268-1242, 7 p.Article