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PRECIPITATION HARDENING MECHANISM IN NI-BASE WROUGHT SUPERALLOY = MECANISME DE DURCISSEMENT PAR PRECIPITATION DANS UN SUPER ALLIAGE A BASE DE NICKEL TRAVAILLESHIMANUKI Y.1981; TRANS. JPN. INST. MET.; ISSN 0021-4434; JPN; DA. 1981; VOL. 22; NO 1; PP. 17-24; BIBL. 19 REF.Article

DISLOCATION -GAMMA ' INTERACTION AND AGE-HARDENING MECHANISM IN A NI-BASE SUPERALLOY, UDIMET 520SHIMANUKI Y; DOI H.1975; TRANS. JAP. INST. METALS; JAP.; DA. 1975; VOL. 16; NO 3; PP. 123-131; BIBL. 11 REF.Article

EFFECT OF AGING TREATMENT ON MICROSTRUCTURE AND TENSILE PROPERTIES OF UDIMET 520 AND NI-6.38% AL ALLOYSHIMANUKI Y; DOI H.1974; TRANS. JAP. INST. METALS; JAP.; DA. 1974; VOL. 15; NO 1; PP. 24-31; BIBL. 12 REF.Article

THE VARIATION WITH AGING CONDITION OF THE COMPOSITION OF GAMMA ' PHASE IN A NI-BASE SUPERALLOY, UDIMET 520.SHIMANUKI Y; MASUI M; DOI H et al.1976; SCRIPTA METALLURG.; E.U.; DA. 1976; VOL. 10; NO 9; PP. 805-808; BIBL. 2 REF.Article

KINETIC STUDY ON REACTIONS BETWEEN POLYMER CHAIN-ENDS: COUPLING REACTIONS OF LIVING POLYSTYRENE WITH CHLORO-ENDED POLYSTYRENEOKAMOTO A; SHIMANUKI Y; MITA I et al.1982; EUR. POLYM. J.; ISSN 0014-3057; GBR; DA. 1982; VOL. 18; NO 6; PP. 545-548; BIBL. 15 REF.Article

Theoretical and experimental study on rectenna array for microwave power transmissionADACHI, S; SHIMANUKI, Y.Space solar power review. 1985, Vol 5, Num 2, pp 127-129, issn 0191-9067Article

Structure of the fibrillar matrix in the stalk of Carchesium polypinumNAKAJIMA, Y; SHIMANUKI, Y; ASAI, H et al.Microbios letters. 1988, Vol 37, Num 146, pp 75-79, issn 0307-5494Article

Formation of nuclei of oxygen precipitates in CZ silicon crystals during crystal growth processFURUYA, H; SUZUKI, I; SHIMANUKI, Y et al.Journal of the Electrochemical Society. 1988, Vol 135, Num 3, pp 677-682, issn 0013-4651Conference Paper

Effect of crystal pulling rate on formation of crystal-originated particles on Si wafersRYUTA, J; MORITA, E; TANAKA, T et al.Japanese journal of applied physics. 1992, Vol 31, Num 3B, pp L293-L295, issn 0021-4922, 2Article

The role of carbon in nucleation of oxygen precipitates in CZ silicon crystalsSHIMANUKI, Y; FURUYA, H; SUZUKI, I et al.Journal of the Electrochemical Society. 1989, Vol 136, Num 7, pp 2058-2062, issn 0013-4651, 5 p.Article

Quantitative analysis of surface contaminations on Si wafers by total reflection X-ray fluorescenceKONDO, H; RYUTA, J; MORITA, E et al.Japanese journal of applied physics. 1992, Vol 31, Num 1A/B, pp L11-L13, issn 0021-4922, 2Article

Digital radiography in an intensive care unitSAITO, H; KURASHINA, T; ISHIBASHI, T et al.Clinical radiology. 1988, Vol 39, Num 2, pp 127-130, issn 0009-9260Article

Observation of wet biological specimen by soft X-ray microscope with zone plates at UVSORWATANABE, N; TANIGUCHI, M; SHIMANUKI, Y et al.Japanese journal of applied physics. 1992, Vol 31, Num 11A, pp L1571-L1573, issn 0021-4922, 2Article

Posterior Circulation and High Prevalence of Ischemic Stroke among Young Pediatric Patients with Moyamoya Disease: Evidence of Angiography-Based Differences by Age at DiagnosisMUGIKURA, S; HIGANO, S; SHIRANE, R et al.American journal of neuroradiology. 2011, Vol 32, Num 1, pp 192-198, issn 0195-6108, 7 p.Article

Formation process of grown-in defects in Czochralski grown silicon crystalsNAKAMURA, K; SAISHOJI, T; KUBOTA, T et al.Journal of crystal growth. 1997, Vol 180, Num 1, pp 61-72, issn 0022-0248Article

Spontaneous regression of localized neuroblastoma detected by mass screeningYAMAMOTO, K; HANADA, R; KIKUCHI, A et al.Journal of clinical oncology. 1998, Vol 16, Num 4, pp 1265-1269, issn 0732-183XArticle

Radial distribution of temperature gradients in growing CZ-Si crystals and its application to the prediction of microdefect distributionKITAMURA, K; FURUKAWA, J; NAKADA, Y et al.Journal of crystal growth. 2002, Vol 242, Num 3-4, pp 293-301, issn 0022-0248Article

Hypomelanosis of Ito associated with neuroblastomaOGUMA, E; AIHARA, T; SHIMANUKI, Y et al.Pediatric radiology. 1996, Vol 26, Num 4, pp 273-275, issn 0301-0449Article

Kinetics of low-temperature out-diffusion of copper from silicon wafersSHABANI, M. B; OKUUCHI, S; SHIMANUKI, Y et al.SPIE proceedings series. 1999, pp 510-525, isbn 0-8194-3497-3Conference Paper

Secondary ion mass spectrometry round-robin study of impurity analysis in gallium arsenide using uniformly-doped standard gallium arsenide specimensSHICHI, H; OGAWA, T; ADACHI, T et al.Surface and interface analysis. 1994, Vol 21, Num 1, pp 23-31, issn 0142-2421Article